2002. 11. 13
1/1
SEMICONDUCTOR
TECHNICAL DATA
BC516
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1
2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-10
V
Collector Current
I
C
-500
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-0.1mA, I
E
=0
-40
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-30
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-1.0mA, I
C
=0
-10
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=-40V, I
E
=0
-
-
-1.0
A
Emitter Cut-off Current
I
EBO
V
EB
=-10V, I
C
=0
-
-
-1.0
A
DC Current Gain
h
FE
I
C
=-100mA, V
CE
=-2V
30k
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-100mA, I
B
=-1mA
-
-
-1.0
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-100mA, I
B
=-1mA
-
-1.5
-2.0
V
Current Gain Bandwidth Product
f
T
I
C
=-100mA, V
CE
=-2V, f=100MHz
-
220
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz, I
E
=0
-
5.0
-
pF
PDF 
ZIP