2000. 10. 2
1/1
SEMICONDUCTOR
TECHNICAL DATA
BC637
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
HIGH CURRENT TRANSISTORS.
FEATURES
Complementary to BC638.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
=0
-
-
100
nA
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
I
C
=10mA, I
B
=0
60
-
-
V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=100 A, I
E
=0
60
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
5.0
-
-
V
DC Current Gain
h
FE
V
CE
=2V, I
C
=150mA
40
-
160
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
-
0.5
V
Base-Emitter Voltage
V
BE
V
CE
=2V, I
C
=500mA
-
-
1.0
V
Transition Frequency
f
T
V
CE
=2V, I
C
=50mA, f=100MHz
-
200
-
MHz
Input Capacitance
C
ib
V
EB
=0.5V, I
C
=0, f=1MHz
-
50
-
pF
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
7.0
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
500
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature
T
stg
-55 150
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