2001. 12. 4
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR322
SILICON EPITAXIAL
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F
=0.54V (Typ.).
Low Reverse Current : I
R
=5 A (Max.).
Small Package : USM.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
1. N.C
2. ANODE
3. CATHODE
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
M
0.42 0.10
N
0.10 MIN
3
2
1
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Marking
U L
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
(1)
I
F
=1mA
-
0.28
-
V
V
F
(2)
I
F
=10mA
-
0.36
-
V
F
(3)
I
F
=100mA
-
0.54
0.60
Reverse Current
I
R
V
R
=40V
-
-
5
A
Total Capacitance
C
T
V
R
=0, f=1MHz
-
18
25
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
45
V
Reverse Voltage
V
R
40
V
Maximum (Peak) Forward Current
I
FM
300
mA
Average Forward Current
I
O
100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
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