2001. 11. 29
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SEMICONDUCTOR
TECHNICAL DATA
KDR331
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F
=0.25(Typ.) @I
F
=5mA
Small Package : USM.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
1. ANODE 1
2. ANODE 2
3. CATHODE
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
M
0.42 0.10
N
0.10 MIN
3
2
1
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
15
V
Reverse Voltage
V
R
10
V
Maximum (Peak) Forward Current
I
FM
100 *
mA
Average Forward Current
I
O
50 *
mA
Surge Current (10ms)
I
FSM
1 *
A
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
Operating Temperature Range
T
opr
-40 100
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.21
-
V
V
F(2)
I
F
=5mA
-
0.25
0.30
V
F(3)
I
F
=50mA
-
0.35
0.50
Reverse Current
I
R
V
R
=10V
-
-
20
A
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
13
40
pF
* : Unit Rating. Total Rating=Unit Rating 1.5
Type Name
Marking
UW
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