2003. 2. 25
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SEMICONDUCTOR
TECHNICAL DATA
KDR393
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
Low Voltage High Speed Switching.
FEATURES
Low Forward Voltage : V
F
=0.60V(Max.)
Low Reverse Current : I
R
=5 A(Max.)
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
1. ANODE 1
2. ANODE 2
3. CATHODE
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
M
0.42 0.10
N
0.10 MIN
3
2
1
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Marking
R 9
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
=10mA
-
0.36
-
V
I
F
=100mA
-
0.51
0.60
Reverse Current
I
R
V
R
=10V
-
-
5
A
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
20
25
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
40
V
Reverse Voltage
V
R
40
V
Average Forward Current
I
O
0.1
A
Non-repetitive peak surge current
(10mA)
I
FSM
1
A
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55 125
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