2002. 10. 2
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR412
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
LOW POWER RECTIFICATION
FOR SWITCHING POWER SUPPLY.
FEATURES
Small Surface Mounting Type. (USC)
Low Forward Voltage : V
F
max=0.5V
High Reliability
CONSTRUCTION
Silicon epitaxial planar.
MAXIMUM RATING (Ta=25 )
USC
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
2.50 0.1
1.25 0.05
0.90 0.05
0.30+0.06/-0.04
1.70 0.05
MIN 0.17
0.126 0.03
0~0.1
0.15 0.05
0.4 0.05
2 +4/-2
L
M
4~6
I
1.0 MAX
CATHODE MARK
M
M
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Type Name
Marking
3
U
CHARACTERISTIC
SYMBOL
RATING
UNIT
Peak Reverse Voltage
V
RM
40
V
DC Reverse Voltage
V
R
20
V
Average Forward Current
I
O
0.5
A
Peak Forward Surge Current
I
FSM
3
A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-40 +125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
(1)
I
F
=10mA
-
-
0.3
V
V
F
(2)
I
F
=500mA
-
-
0.5
V
Reverse Current
I
R
V
R
=10V
-
-
30
A
Total Capacitance
C
T
V
R
=10V, f=1MHz
-
20
-
pF
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