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Электронный компонент: KDR511T

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2003. 8. 4
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR511T
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
HIGH FREQUENCY RECTIFICATION.
SWITCHING REGULATORS, CONVERTERS, CHOPPERS.
FEATURES
Low Forward Voltage : V
F
max=0.4V.
Low Leakage Current : I
R
max=500 A.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
TSM
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
K
K
B
E
C
L
H
J
J
I
2
1
3
+
_
+
_
+
_
+
_
+
_
1. NC
2. ANODE
3. CATHODE
2
1
3
ELECTRICAL CHARACTERISTICS (Ta=25 )
Type Name
Marking
Lot No.
T 1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
15
V
Reverse Voltage
V
R
15
V
Average Forward Current
I
O
1
A
Non-Repetitive Peak Surge Current
I
FSM
10
A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
=0.5A
-
0.30
0.35
V
I
F
=1A
-
0.35
0.40
V
Reverse Current
I
R
V
R
=10V
-
-
500
A
V
R
=15V
-
-
1000
Total Capacitance
C
T
V
R
=10V, f=1MHz
-
42
-
pF
Reverse Recovery Time
t
rr
I
F
=I
R
=100mA
-
-
15
nS
2003. 8. 4
2/2
KDR511T
Revision No : 1
REVERSE CURRENT I (mA)
R
0.01
0
REVERSE VOLTAGE V (V)
R
I - V
R
R
5
10
15
0.1
1
10
100
FORWARD VOLTAGE V (V)
FORWARD CURRENT I (A)
0.1
0
3
1
0.1
0.01
F
0.5
0.4
0.3
0.2
F
Ta=125 C
I - V
F F
Ta=125 C
C - V
R
R
REVERSE VOLTAGE V (V)
INTERTERMINAL CAPACITANCE C (pF)
Ta=100 C
Ta=75 C
Ta=50 C
Ta=25 C
Ta=100 C
Ta=75 C
Ta=50 C
Ta=25 C
10
2
10
3
10
f=1MHz
1
3
10
30
5