2003. 2. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR701S
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
For High frequency rectification
FEATURES
Low Forward Voltage : V
F
max=0.55V.
I
R
=700mA recification possible.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. NC
2. ANODE
3. CATHODE
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
2
1
3
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Type Name
Marking
Lot No.
DK
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=1mA
30
-
-
V
Forward Voltage
V
F
I
F
=0.7A
-
-
0.55
V
Reverse Current
I
R
V
R
=30V
-
-
80
A
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
190
-
pF
Reverse Recovery Time
t
rr
I
R
=I
F
=100mA
-
7.5
-
nS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
30
V
Reverse Voltage
V
R
30
V
Average Forward Current
I
O
0.7
A
Non-repetitive peak surge current
I
FSM
5
A
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55 125
2003. 2. 25
2/2
KDR701S
Revision No : 1
REVERSE CURRENT I (
A)
R
REVERSE VOLTAGE V (V)
R
I - V
R
R
0.2
AMBIENT TEMPERATURE Ta ( C)
-40
AMBIENT TEMPERATURE Ta ( C)
I - V
F
FORWARD VOLTAGE V (V)
F
FORWARD CURRENT I (mA)
F
F
I - Ta
R
REVERSE CURRENT I (
A)
R
V - Ta
F
FORWARD VOLTAGE V (V)
F
0
40
80
120
160
I =700mA
F
C - V
R
REVERSE VOLTAGE V (V)
T
TERMINAL CAPACITANCE C (pF)
T
R
0
0
1
-40
10
10
2
10
3
10
4
0
40
80
120
160
200
Ta=25 C
0.3
0.4
0.5
0.6
0.7
0.8
5
10
15
20
25
30
20
40
60
80
100
120
140
160
180
200
0.001
0
100
200
300
400
500
2
10
0.01
0.1
1
10
3
10
Ta=25 C
0
1
5
3
5
10
30
50
Ta=25 C
10
15
20
25
30
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