2003. 7. 8
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SEMICONDUCTOR
TECHNICAL DATA
KDR728E
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F(2)
=0.42(Typ.)
Small Package : ESC.
MAXIMUM RATING (Ta=25 )
ESC
DIM
MILLIMETERS
A
B
C
D
E
1.60 0.10
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
CATHODE MARK
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
0.13 0.05
F
+
_
+
_
+
_
+
_
+
_
+
_
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
ELECTRICAL CHARACTERISTICS (Ta=25 )
Type Name
Marking
T
U
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
30
V
Reverse Voltage
V
R
30
V
Maximum (Peak) Forward Current
I
FM
150
mA
Average Forward Current
I
O
30
mA
Surge Current (10ms)
I
FSM
200
mA
Power Dissipation
P
D
150
*
mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.3
0.4
V
V
F(2)
I
F
=30mA
-
0.42
0.55
Reverse Current
I
R
V
R
=30V
-
-
300
A
Total Capacitance
C
T
V
R
=1V, f=1MHz
-
6.5
-
pF
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