2003. 2. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR729
SCHOTTKY BARRIER TYPE DIODE
Revision No : 4
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F(4)
=0.43V(Typ.)
I
O
=200mA rectification possible.
Small Package : USC.
MAXIMUM RATING (Ta=25 )
USC
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
2.50 0.1
1.25 0.05
0.90 0.05
0.30+0.06/-0.04
1.70 0.05
MIN 0.17
0.126 0.03
0~0.1
0.15 0.05
0.4 0.05
2 +4/-2
L
M
4~6
I
1.0 MAX
CATHODE MARK
M
M
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
+
_
+
_
+
_
+
_
+
_
+
_
+
_
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
ELECTRICAL CHARACTERISTICS (Ta=25 )
Type Name
Marking
M
U
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
30
V
Reverse Voltage
V
R
30
V
Maximum (Peak) Forward Current
I
FM
300
mA
Average Forward Current
I
O
200
mA
Surge Current (10ms)
I
FSM
1
A
Power Dissipation
P
D
200*
mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.22
-
V
V
F(2)
I
F
=10mA
-
0.29
-
V
F(3)
I
F
=100mA
-
0.38
-
V
F(4)
I
F
=200mA
-
0.43
0.55
Reverse Current
I
R
V
R
=30V
-
-
50
A
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
50
-
pF
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