2005. 10. 24
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SEMICONDUCTOR
TECHNICAL DATA
KHB1D0N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 1
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
V
DSS
= 600V, I
D
= 1.0A
Drain-Source ON Resistance :
R
DS(ON)
=12
@V
GS
= 10V
Qg(typ.) = 5.9nC
MAXIMUM RATING (Ta=25 )
* : Drain current limited by maximum junction temperature.
G
D
S
CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB1D0N60D KHB1D0N60I
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
30
V
Drain Current
@T
C
=25
I
D
1.0
1.0*
A
@T
C
=100
0.57
0.57*
Pulsed (Note1)
I
DP
3.0
3.0*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
50
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
2.8
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
5.5
V/ns
Drain Power
Dissipation
Ta=25
P
D
28
28
W
Derate above 25
0.22
0.22
W/
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
4.53
4.53
/W
Thermal Resistance, Case-to-Sink
R
thCS
50
50
/W
Thermal Resistance, Junction-to-
Ambient
R
thJA
110
110
/W
DPAK
DIM MILLIMETERS
A
A
B
B
C
C
D
D
F
F
F
H
H
I
I
J
J
K
K
L
L
6.6 0.2
6.1 0.2
5.34 0.3
0.7 0.2
2.7 0.2
2.3 0.2
0.96 MAX
2.3 0.1
0.5 0.1
1.5
0.5 0.1
E
E
0.8 0.1
M
M
0.55 MIN
O
O
1
2
3
1. GATE
2. DRAIN
3. SOURCE
1.02 0.2
P
P
Q
Q
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
0.8 0.2
+
_
DIM MILLIMETERS
IPAK-S
1
2
3
A
A
B
B
C
C
D
D
E
E
F
F
F
G
G
H
H
I
I
J
J
L
L
6.6 0.2
6.1 0.2
5.34 0.3
0.7 0.2
9.3 0.3
2.3 0.2
0.76 0.1
0.96 MAX
2.3 0.1
0.5 0.1
0.5 0.1
1.0 0.1
1.5
1. GATE
2. DRAIN
3. SOURCE
K
M
M
O
N
O
N
K
1.8 0.2
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1.02 0.3
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KHB1D0N60D/I
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250 A, V
GS
=0V
600
-
-
V
Breakdown Voltage Temperature Coefficient
BV
DSS
/ T
j
I
D
=250 A, Referenced to 25
-
0.65
-
V/
Drain Cut-off Current
I
DSS
V
DS
=600V, V
GS
=0V,
-
-
10
A
Gate Threshold Voltage
V
th
V
DS
=V
GS
, I
D
=250 A
2.0
-
4.0
V
Gate Leakage Current
I
GSS
V
GS
= 30V, V
DS
=0V
-
-
100
nA
Drain-Source ON Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.5A
-
9.7
12
Dynamic
Total Gate Charge
Q
g
V
DS
=480V, I
D
=1.0A
V
GS
=10V (Note4,5)
-
5.9
7.7
nC
Gate-Source Charge
Q
gs
-
1.0
-
Gate-Drain Charge
Q
gd
-
2.7
-
Turn-on Delay time
t
d(on)
V
DD
=300V
R
L
=300
R
G
=25
(Note4,5)
-
14
40
ns
Turn-on Rise time
t
r
-
45
100
Turn-off Delay time
t
d(off)
-
25
60
Turn-off Fall time
t
f
-
35
80
Input Capacitance
C
iss
V
DS
=25V, V
GS
=0V, f=1.0MHz
-
165
215
pF
Reverse Transfer Capacitance
C
rss
-
3.6
4.7
Output Capacitance
C
oss
-
18
25
Source-Drain Diode Ratings
Continuous Source Current
I
S
V
GS
<V
th
-
-
1.0
A
Pulsed Source Current
I
SP
-
-
3.0
Diode Forward Voltage
V
SD
I
S
= 1.0A, V
GS
=0V
-
-
1.4
V
Reverse Recovery Time
t
rr
I
S
= 1.0A, V
GS
=0V,
dIs/dt=100A/ s
-
180
-
ns
Reverse Recovery Charge
Q
rr
-
0.47
-
C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =115mH, I
S
=1.0A, V
DD
=50V, R
G
= 25 , Starting T
j
=25 .
Note 3) I
S
1.0A, dI/dt 300A/ , V
DD
BV
DSS
, Starting T
j
=25 .
Note 4) Pulse Test : Pulse width
300 , Duty Cycle
2%.
Note 5) Essentially independent of operating temperature.
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KHB1D0N60D/I
Revision No : 1
Normalized Threshold Voltage V
th
Gate - Source Voltage V
GS
(V)
I
D
- V
DS
Drain - Source Voltage V
DS
(V)
Drain Current I
D
(A)
10
-1
10
0
10
1
10
-1
10
0
10
1
10
0
10
-1
6
8
4
10
2
I
D
- V
GS
Vth - Tj
R
DS(ON)
- I
D
R
DS(ON)
- Tj
-100
-50
0.0
0.5
1.5
1.0
0
50
100
150
Drain Current I
D
(A)
Drain Current I
D
(A)
On - Resistance R
DS(ON)
(
)
I
S
- V
SD
0.2
0.4
0.8
1.0
1.2
1.4
1.6
0.6
Reverse Drain Current I
S
(A)
Junction Temperture Tj ( )
0
0
50
40
20
10
30
0.0
0.9
2.7
1.5
2.1
0.3
1.2
2.4
1.8
50
-100
-50
100
150
Normalized On Resistance
V
GS
= 20V
V
GS
= 10V
Junction Temperature Tj ( )
C
Source - Drain Voltage V
SD
(V)
0.0
0.5
2.5
1.0
1.5
2.0
C
25 C
150 C
150
C
25
C
-55
C
V
GS
= 0V
I
DS
= 250
V
GS
= 10V
I
DS
= 1.0A
10
0
10
-1
V
GS
TOP : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
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KHB1D0N60D/I
Revision No : 1
Drain Current I
D
(A)
Gate - Charge Qg (nC)
C - V
DS
Drain - Source Voltage V
DS
(V)
Drain - Source Voltage V
DS
(V)
0
12
10
6
2
4
8
2
7
6
5
1
4
3
0
Qg - V
GS
Safe Operation Area
Capacitance (pF)
Gate - Source Voltage V
GS
(V)
0
100
300
200
10
0
10
1
10
-1
10
0
10
1
10
-1
10
-2
10
-1
10
0
10
1
10
2
C
Coss
Ciss
Crss
Frequency = 1MHz
DC
10
s
1
s
100
s
Junction Temperature Tj ( )
0.0
1.0
0.6
0.2
0.4
0.8
75
150
125
50
100
25
Drain Current I
D
(A)
V
DS
= 120V
V
DS
= 300V
V
DS
= 480V
Square Wave Pulse Duration (sec)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
10
-2
10
-1
10
0
- Duty Factor, D= t
1
/t
2
T
j(max)
- T
c
- R
thJC
=
P
D
t
1
t
2
P
DM
Single Pulse
Duty=0.5
0.2
0.1
0.05
0.02
0.01
R
th
Normalized Transient Thermal Resistance
I
D
- T
j
I
D
=1.0A
Tc= 25
T
j
= 150
Single nonrepetitive pulse
C
C
Operation in this
area is limited by R
DS(ON)
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KHB1D0N60D/I
Revision No : 1
- Gate Charge
ID
ID
V
DS
VGS
VGS
VDS
VGS
1.0 mA
0.8 x VDSS
0.5 x VDSS
Fast
Recovery
Diode
10V
10 V
25
RL
Qg
Qgd
Qgs
Q
tp
- Resistive Load Switching
- Single Pulsed Avalanche Energy
V
DS
(t)
I
D
(t)
V
DS
VGS
50V
10 V
25
L
Time
EAS= LI
AS
2
BV
DSS
- V
DD
BV
DSS
1
2
V
DD
I
AS
BV
DSS
V
DS
V
GS
tr
t
d(off)
t
off
t
d(on)
t
on
tf
10%
90%
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