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SEMICONDUCTOR
TECHNICAL DATA
KIC7WZ34FK
SILICON MONOLITHIC CMOS
DIGITAL INTEGRATED CIRCUIT
Revision No : 1
TRIPLE NON INVERTER
FEATURES
High output drive : 24mA(min.) @V
CC
=3V.
Super high speed operation : tpd 2.4ns(typ.) @V
CC
=5V, 50pF.
Operation voltage range : V
CC(opr)
=1.65~5.5V.
Latch-up performance : 500mA or more
ESD performance : 200V or more (EIAJ)
2000V or more (MIL)
Power down protection is provided on all inputs and outputs.
DIM MILLIMETERS
A
B
D
E
US8
2.0 0.1
3.1 0.1
2.3 0.1
0.5
0.2+0.05/-0.04
0.7 0.1
0.12 0.04
0 ~ 0.1
C
F
G
H
A
D
D
D
C
B
E
F
G
H
1
4
5
8
+
_
+
_
+
_
+
_
+
_
MAXIMUM RATINGS (Ta=25 )
MARKING
Lot No.
Z34
Type Name
CHARACTERISTIC
SYMBOL
RATING
UNIT
Power Supply Voltage
V
CC
-0.5~6
V
DC Input Voltage
V
IN
-0.5~6
V
DC Output Voltage
V
OUT
-0.5~6
V
Input Diode Current
I
IK
-20
mA
Output Diode Current
I
OK
-20
mA
DC Output Current
I
OUT
50
mA
DC V
CC
/ground Current
I
CC
50
mA
Power Dissipation
P
D
200
mW
Storage Temperature Range
T
stg
-65 150
Lead Temperature (10s)
T
L
260
PIN CONNECTION(TOP VIEW)
1
2
3
4
1Y
3A
2Y
8
7
6
5
V
CC
1A
3Y
2A
GND
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KIC7WZ34FK
Revision No : 1
Truth Table
A
Y
L
L
H
H
Logic Diagram
IN A
1
OUT Y
Recommended Operating Conditions
CHARACTERISTIC
SYMBOL
RATING
UNIT
Supply Voltage
V
CC
1.65~5.5
V
1.5~5.5 (Note1)
Input Voltage
V
IN
0~5.5
V
Output Voltage
V
OUT
0~5.5 (Note2)
V
0~V
CC
(Note3)
Operating Temperature
T
opr
-40~85
Input Rise and Fall Time
d
t
/d
v
0~20 (V
CC
=1.8V 0.15V,
2.5V 0.2V)
ns/V
0~10 (V
CC
=3.3V 0.3V)
0~5 (V
CC
=5.5V 0.5V)
Note1 : Data retention only.
Note2 : V
CC
=0V.
Note3 : High or low state
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KIC7WZ34FK
Revision No : 1
ELECTRICAL CHARACTERISTICS
DC Characteristics
AC Characteristics (unless otherwise specified, Input : t
r
=t
f
=3ns)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Ta=25
Ta=-40~85
UNIT
V
CC
(V)
MIN.
TYP.
MAX.
MIN.
MAX.
Input
Voltage
High Level
V
IH
-
1.65~1.95
0.75
V
CC
-
-
0.75
V
CC
-
V
2.3~5.5 0.7 V
CC
-
-
0.7 V
CC
-
Low Level
V
IL
-
1.65~1.95
-
-
0.25
V
CC
-
0.25
V
CC
2.3~5.5
-
-
0.3 V
CC
-
0.3 V
CC
Output
Voltage
High Level
V
OH
V
IN
=
V
IH
or V
IL
I
OH
=-100 A
1.65
1.55
1.65
-
1.55
-
V
2.3
2.2
2.3
-
2.2
-
3.0
2.9
3.0
-
2.9
-
4.5
4.4
4.5
-
4.4
-
I
OH
=-4mA
1.65
1.29
1.52
-
1.29
-
I
OH
=-8mA
2.3
1.9
2.14
-
1.9
-
I
OH
=-16mA
3.0
2.4
2.75
-
2.4
-
I
OH
=-24mA
3.0
2.3
2.62
-
2.3
-
I
OH
=-32mA
4.5
3.8
4.13
-
3.8
-
Low Level
V
OL
V
IN
=V
IL
I
OH
=100 A
1.65
-
0
0.1
-
0.1
V
2.3
-
0
0.1
-
0.1
3.0
-
0
0.1
-
0.1
4.5
-
0
0.1
-
0.1
I
OH
=4mA
1.65
-
0.08
0.24
-
0.24
I
OH
=8mA
2.3
-
0.1
0.3
-
0.3
I
OH
=16mA
3.0
-
0.16
0.4
-
0.4
I
OH
=24mA
3.0
-
0.24
0.55
-
0.55
I
OH
=32mA
4.5
-
0.25
0.55
-
0.55
Input Leakage Current
I
IN
V
IN
=5.5V or GND
0~5.5
-
-
1
-
10
A
Power Off Leakage Current
I
OFF
V
IN
or V
OUT
=5.5V
0.0
-
-
1
-
10
A
Quiescent Supply Current
I
CC
V
IN
=5.5V or GND
1.65~5.5
-
-
1
-
10
A
CHARACTERISTIC
SYMBOL
TEST CONDITION
Ta=25
Ta=-40~85
UNIT
V
CC
(V)
MIN.
TYP.
MAX.
MIN.
MAX.
Propagation delay time
t
PLH
t
PHL
C
L
=15pF, R
L
=1M
1.8 0.15
2.0
4.4
9.5
2.0
10.0
ns
2.5 0.2
1.0
3.0
5.2
1.0
5.8
3.3 0.3
0.8
2.3
3.6
0.8
4.0
5.0 0.5
0.5
1.8
2.9
0.5
3.2
C
L
=50pF, R
L
=500
3.3 0.3
1.2
3.0
4.6
1.2
5.1
ns
5.0 0.5
0.8
2.4
3.8
0.8
4.2
Input Capacitance
C
IN
-
0~5.5
-
3.0
-
-
-
pF
Power Dissipation
Capacitance
C
PD
(Note)
3.3
-
24
-
-
-
pF
5.5
-
34
-
-
-
Note : C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption
without load. Average operating current can be obtained by the equation : I
CC(opr)
=C
PD
V
CC
f
IN
+I
CC
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