1999. 6. 8
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRA307E~KRA309E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors
Simplify Circuit Design
Reduce a Quantity of Parts and Manufacturing Process
High Packing Density.
DIM
MILLIMETERS
A
B
D
E
ESM
1.60 0.10
0.85 0.10
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
C
G
H
J
1
3
2
E
B
D
A
G
H
C
J
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
+
_
+
_
+
_
+
_
+_
+
_
TYPE NO.
R1(k )
R2(k )
KRA307E
10
47
KRA308E
22
47
KRA309E
47
22
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA307E 309E
V
O
-50
V
Input Voltage
KRA307E
V
I
-30, 6
V
KRA308E
-40, 7
KRA309E
-40, 15
Output Current
KRA307E 309E
I
O
-100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRA307E
KRA308E
KRA309E
MARK
PH
PI
PJ
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
R2
COMMON(+)
OUT
IN
Type Name
Marking