2002. 7. 10
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SEMICONDUCTOR
TECHNICAL DATA
KRC416E~KRC422E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM
MILLIMETERS
A
B
D
E
ESM
1.60 0.10
0.85 0.10
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
C
G
H
J
1
3
2
E
B
D
A
G
H
C
J
1. EMITTER
2. BASE
3. COLLECTOR
+
_
+
_
+
_
+
_
+_
+
_
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
R2
COMMON
OUT
IN
Type Name
Marking
TYPE NO.
R1(k )
R2(k )
KRC416E
1
10
KRC417E
2.2
2.2
KRC418E
2.2
10
KRC419E
4.7
10
KRC420E
10
4.7
KRC421E
47
10
KRC422E
100
100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRC416E~422E
V
O
50
V
Input Voltage
KRC416E
V
I
10, -5
V
KRC417E
12, -10
KRC418E
12,-5
KRC419E
20, -7
KRC420E
30, -10
KRC421E
40, -15
KRC422E
40, -10
Output Current
KRC416E~422E
I
O
100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRC416E KRC417E KRC418E KRC419E KRC420E KRC421E KRC422E
MARK
N2
N4
N5
N6
N7
N8
N9