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Электронный компонент: KTA1242D

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2003. 3. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1242D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
FEATURES
h
FE
=100 320 (V
CE
=-2V, I
C
=-0.5A).
Low Collector Saturation Voltage.
: V
CE(sat)
=-0.5V (I
C
=-3A, I
B
=-75mA).
MAXIMUM RATING (Ta=25 )
DPAK
DIM
MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10
M
0.90 0.1
O
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
P
0.95 MAX
Q
+
_
+_
+
_
+
_
+
_
+_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
DIM
MILLIMETERS
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
2.0 0.2
K
+
_
+
_
+
_
+
_
+_
+_
+_
+
_
+
_
+
_
+
_
+
_
Note : h
FE
(1) Classification O:100~200, Y:160~320
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-35
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltag
V
EBO
-8
V
Collector Current
I
C
-5
A
Base Current
I
B
-0.5
A
Collector Power Dissipation
P
C
1.0
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-35V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-8V, I
C
=0
-
-
-100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-20
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-1mA, I
C
=0
-8
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=-2V, I
C
=-0.5A
100
-
320
h
FE
(2)
V
CE
=-2V, I
C
=-4A
70
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-3A, I
B
=-75mA
-
-
-0.5
V
Base-Emitter Voltage
V
BE
V
CE
=-2V, I
C
=-4A
-
-
-1.5
V
Transition Frequency
f
T
V
CE
=-2V, I
C
=-0.5A
-
170
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
62
-
pF
2003. 3. 27
2/2
KTA1242D/L
Revision No : 4
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
-2
C
0
COLLECTOR CURRENT I (A)
-2
V - I
CE(sat)
C
C
COLLECTOR CURRENT I (A)
-0.01
-0.03
CE(sat)
VOLTAGE V (V)
-2
COLLECTOR CURRENT I (A)
0
C
-0.4
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
COLLECTOR POWER DISSIPATION P (W)
0
C
0.2
20
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
-4
-6
-8
-10
-4
-6
-8
COMMON EMITTER
Tc=25 C
-150mA
I =-10mA
B
-100mA
-70mA
-50mA
-30mA
-20mA
-0.8
-1.2
-1.6
-2.0
-4
-6
-8
COMMON EMITTER
V =-2V
CE
Tc=100 C
Tc=-25 C
Tc=25 C
10
DC CURRENT GAIN h
FE
1k
-0.01
COLLECTOR CURRENT I (A)
C
C
FE
h - I
-0.03
-0.1
-0.3
-1
-3
-10
30
50
100
300
500
COMMON EMITTER
V =-2V
CE
Tc=100 C
Tc=25 C
Tc=-25 C
COLLECTOR-EMITTER SATURATION
-0.03
-0.1
-0.3
-1
-3
-10
-0.05
-0.1
-0.3
-0.5
-1
-3
COMMON EMITTER
I /I =40
C
B
Tc=100 C
Tc=-25 C
Tc=25 C
40
60
80
100 120 140 160
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Ta=25 C
COLLECTOR CURRENT I (A)
C
-0.1
-0.3
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
-0.5
-1
-3
-5
-10
-30 -50
-0.3
-0.5
-1
-3
-5
-10
SINGLE PULSE Tc=25 C
PULSE WIDTH=10ms(MAX)
DUTY CYCLE=30%(MAX)
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
I MAX.(PULSED)
I MAX.
(CONTINUOUS)
C
C
DC
OPERAT
ION
Tc=2
5 C
V MAX.
CEO
-20
10mS*
**
*
**
100mS*