2003. 3. 27
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1862D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
HIGH VOLTAGE SWITCHING.
POWER SUPPLY SWITCHING FOR TELEPHONES.
FEATURES
High Breakdown Voltage, Typically : BV
CEO
=-400V.
Low Collector Saturation Voltage.
: V
CE(sat)
=-0.5V(Max.) at (I
C
=0.5A)
High Switching Speed, Typically
: t
f
= 0.4 S at I
C
=-1A
Wide Safe Operating Area (SOA)
MAXIMUM RATING (Ta=25 )
DPAK
DIM
MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10
M
0.90 0.1
O
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
P
0.95 MAX
Q
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification O:56~120, Y:82~180.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltag
V
EBO
-7
V
Collector Current
DC
I
C
-2.0
A
Pulse
I
CP
-4.0
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut of Current
I
CBO
V
CB
=-400V
-
-
-1.0
A
Emitter Cut of Current
I
EBO
V
EB
=-5V
-
-
-1.0
A
Collector-Base Breakdown Voltage
BV
CBO
I
C
=-50 A
-400
-
-
V
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=-1mA
-400
-
-
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=-50 A
-7
-
-
V
DC Current Gain
h
FE
(1) Note
V
CE
=-5V, I
C
=-100mA
56
100
180
h
FE
(2)
V
CE
=-5V, I
C
=-500mA
6
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-500mA, I
B
=-100mA
-
-0.3
-0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-500mA, I
B
=-100mA
-
-
-1.2
V
Transition Frequency
f
T
V
CE
=-10V, I
E
=-100mA, f=5MHz
-
18
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0mA, f=1MHz
-
30
-
pF
Switching Time
Turn-on Time
t
on
I
B1
150
B1
I
CC
V =-150V
I
B2
I
B2
20sec
-I =I =0.2A
1%
B1 B2
OUTPUT
DUTY CYCLE
INPUT
0
<
=
-
0.2
-
S
Turn-off Time
t
stg
-
-1.8
-
Storage Time
t
f
-
0.4
-
DIM
MILLIMETERS
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
2.0 0.2
K
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
2003. 3. 27
2/3
KTA1862D/L
Revision No : 4
COLLECTOR CURRENT I (A)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
COLLECTOR DISSIPATION P (W)
C
0
0
AMBIENT TEMPERATURE Ta ( C)
P - Ta
-2
-4
-6
-8
-10
Ta=25 C
I =-0.5mA
B
C
-0.1
-0.2
-0.3
-0.4
-0.5
-1.0mA
-1.5mA
-2.0mA
-2.5mA
-3.0mA
-3.5mA
-4.0mA
-4.5mA
-5.0mA
DC CURRENT GAIN h
FE
-0.001
COLLECTOR CURRENT I (A)
C
h - I
FE
C
-0.01
-0.1
-1
-3
1
3
Ta=25 C
V =-5V
CE
10
30
100
300
1K
-0.001
COLLECTOR CURRENT I (A)
C
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
C
BE
-0.003
-0.01
-0.03
-0.1
-0.3
-1
-5
Ta=25 C
V =-5V
CE
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
th
10
TRANSIENT THERMAL RESISTANCE
100
1
r ( C/W)
th
r - t
w
1
0.1
0.01
10
0.001
PULSE WIDTH t (sec)
w
0.1
100
1K
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SIGLE NONREPETITIVE PULSE)
1 INFINITE HEAT SINK
2 NO HEAT SINK
2
1
25
50
75
100
125
150
2
4
6
8
10
12
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
-1
-3
-10
-1K
-0.01
C
COLLECTOR CURRENT I (A)
I MAX(PULSE) *
10mS*
100mS
*
DC OPERATION
-30
-100
-300
-0.03
-0.1
-0.3
-1
-3
-10
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
C
I MAX(DC)
C
Tc=25 C
Ta=25 C
Tc=25 C
2003. 3. 27
3/3
KTA1862D/L
Revision No : 4
V ,V (V)
CE(sat)
-0.001
COLLECTOR CURRENT I (A)
C
V , V - I
CE(sat)
-0.01
-0.1
-1
-3
-0.01
Ta=25 C
I /I =5
C
-0.03
-0.1
-0.3
-1
-3
-10
BE(sat)
SATURATION VOLTAGE
BE(sat)
V
CE(sat)
V
B
BE(sat)
C
f - I
E
EMITTER CURRENT I (A)
0.001
0.03
0.01
0.03
100
T
1
TRANSITION FREQUENCY f (MHz)
10
T
E
0.1
0.3
1
3
5
30
50
V =-10V
Ta=25 C
CE
C - V , C - V
CB
COLLECTOR TO BASE VOLTAGE V (V)
-0.1
-0.3
-1
-3
1K
10
COLLECTOR OUTPUT CAPACITANCE C (pF)
100
ob
CB
EMITTER INPUT CAPACITANCE C (pF)
-10
-30
-100
30
50
300
500
I =0A
f=1MHz
Ta=25 C
E
EMITTER TO BASE VOLTAGE V (V)
EB
ob
ib
ib
EB
FALL TIME t (
s)
0.1
f
-1
-3
-0.3
-0.1
COLLECTOR CURRENT I (A)
C
Switching time
-10
0.3
0.5
1
3
5
10
I =5I =-5I
C
-0.5
-5
Ta=25 C
B1
B2
t
stg
f
t
on
t
STORAGE TIME t (
s)
stg
TURN ON TIME t (
s)
on
C
ib
C
ob
PDF 
ZIP