2003. 3. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC2025D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES
High breakdown voltage V
CEO
120V, high current 1A.
Low saturation voltage and good linearity of h
FE
.
Complementary to KTA1045D/L
MAXIMUM RATING (Ta=25 )
DPAK
DIM
MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10
M
0.90 0.1
O
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
P
0.95 MAX
Q
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
(Note) : h
FE
(1) Classification Y:100 200, GR:160 320
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
1
A
I
CP
2
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
8
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut of Current
I
CBO
V
CB
=50V, I
E
=0
-
-
1
A
Emitter Cut of Current
I
EBO
V
EB
=4V, I
C
=0
-
-
1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A, I
E
=0
120
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
120
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
5
-
-
V
DC Current Gain
h
FE
(1) Note
V
CE
=5V, I
C
=50mA
100
-
320
h
FE
(2)
V
CE
=5V, I
C
=500mA
20
-
-
Gain Bandwidth Product
f
T
V
CE
=10V, I
C
=50mA
-
130
-
MHz
Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
20
-
pF
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
0.15
0.4
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=500mA, I
B
=50mA
-
0.85
1.2
V
Switching Time
Turn-on Time
t
on
-
100
-
nS
Turn-off Time
t
off
-
500
-
Storage Time
t
stg
-
700
-
I
B2
B1
I
20u sec
1uF
1uF
24
1
1
100
CE
V =12V
-2V
12V
I =10I =-10I =500mA
C
B1
B2
DIM
MILLIMETERS
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
2.0 0.2
K
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
2003. 3. 27
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KTC2025D/L
Revision No : 3
C
COLLECTOR CURRENT I (A)
0
0
BASE-EMITTER VOLTAGE V (V)
BE
C
BE
V - I
0.2
0.4
0.6
0.8
1.0
1.2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V =5V
CE
COLLECTOR CURRENT I (A)
0.005
C
10
1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
COLLECTOR DISSIPATION P (W)
C
0
AMBIENT TMMPERATURE Ta ( C)
0
Pc - Ta
20
40
60
80
100 120 140 160
2
4
6
8
10
100
0.01
0.03
0.1
0.3
0.5
1
3
5
0.05
10mS*
1mS*
100
S*
I - V
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
C
0
COLLECTOR CURRENT I (A)
COLLECTOR CURRENT I (mA)
COLLECTOR EMITTER SATURATION
1
3
10
30
CE(sat)
0.01
V - I
C
C
CE
1
2
3
4
5
6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Tc=25 C
20
15
12
10
8
6
4
2
I =0mA
B
CE
COLLECTOR-BASE VOLTAGE V (V)
OUTPUT CAPACITANCE C (pF)
0.05
5
3
1
ob
C - V
ob
CB
10
30
100
10
30
50
100
200
f=1MHz
C
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
3
1
30
10
FE
10
h - I
FE
C
100
300
1k
5k
30
50
100
300
500
V =5V
CE
CE(sat)
C
VOLTAGE V (V)
100
300
1k
3k
0.03
0.05
0.1
0.3
0.5
1.0
I /I =10
C B
SAFE OPERATING AREA
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX.(PULSED)
C
C
I MAX. (CONTINUOUS)
DC OPERATION
Tc=25 C
V MAX.
CEO
*
Tc=25 C
Ta=25 C
1
2
1
2
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