2003. 7. 24
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SEMICONDUCTOR
TECHNICAL DATA
KTC3503
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 3
HIGH-DEFINITION CRT DISPLAY,
VIDEO OUTPUT APPLICATIONS.
FEATURES
High breakdown voltage : V
CEO
300V.
Small reverse transfer capacitance and
excellent high frequency characteristic.
: C
re
=1.8pF (V
CB
=30V, f=1MHz)
Complementary KTA1381.
MAXIMUM RATING (Ta=25 )
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
2
3
+
_
+
_
+
_
15.50 0.5
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:60 120, Y:100 200
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
DC
I
C
100
mA
Pulse
I
CP
200
Collector Power
Dissipation
Ta=25
P
C
1.5
W
Tc=25
7
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=200V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=10V, I
C
=10mA
60
-
200
Transition Frequency
f
T
V
CE
=30V, I
C
=10mA
-
150
-
MHz
Collector Output Capacitance
C
ob
V
CB
=30V, I
E
=0, f=1MHz
-
2.6
-
pF
Reverse Transfer Capacitance
C
re
V
CB
=30V, I
E
=0, f=1MHz
-
1.8
-
pF
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=20mA, I
B
=2mA
-
-
0.6
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=20mA, I
B
=2mA
-
-
1.0
V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A, I
E
=0
300
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
300
-
-
V
Base-Emitter Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
5
-
-
V
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KTC3503
Revision No : 3
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
6
8
2
4
0
C
0
2
10
I =60A
8
I =10A
I =20A
I =40A
I =30A
I =0
I =50A
4
B
B
B
B
B
B
B
6
CE
10
I - V
C
CE
BASE-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
60
80
20
40
0
C
0
0.2
100
0.8
0.4
0.6
BE
1.0
I - V
C
BE
120
V =10V
CE
Ta=75 C Ta=25 C Ta=-25 C
TRANSITION FREQUENCY f (MHz)
COLLECTOR CURRENT I (mA)
30
10
30
0.5
50
1
3
10
C
100
100
300
500
T
f - I
T
C
V =30V
CE
COLLECTOR BASE VOLTAGE V (V)
OUTPUT CAPACITANCE C (pF)
0.5
3
1
1
50
30
10
5
ob
30
3
CB
10
100
C - V
Ob
CB
f =1MHz
T
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
C
CE
I - V
C
CE
0
0
4
8
12
16
20
I =0
B
I =20A
B
I =40A
B
I =60A
B
I =80A
B
I =100A
B
I =120A
B
2
4
6
8
10
COLLECTOR CURRENT I (mA)
h - I
FE
DC CURRENT GAIN h
C
FE
V =10V
300
100
50
30
10
100
30
10
3
1
0.5
500
Ta=75 C
Ta=25 C
Ta=-25 C
CE
C
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KTC3503
Revision No : 3
3
REVERSE TRANSFER CAPA-
0.5
1
10
COLLECTOR BASE VOLTAGE V (V)
1
3
CB
30
100
30
50
10
5
C - V
re
f =1MHz
T
CB
CITANCE C (pF)
re
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
0.5
1
3
10
C
CE(sat)
V - I
CE(sat)
C
VOLTAGE V (V)
30
100
200
0.03
0.05
0.1
0.3
0.5
1
I /I =10
C B
VOLTAGE V (V)
BASE-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
0.5
0.3
0.5
1
BE(sat)
3
1
3
10
100
C
30
200
V - I
5
10
BE(sat)
I /I =10
C B
C
COLLECTOR EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
3
C
3
CE
10
30
SAFE OPERATING AREA
100
300
5
10
30
50
100
300
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
100mS*
DC OPERAT
ION
DC OPERAT
ION
Tc=25 C
1mS* 500
S
*
I MAX.(PULSED)*
C
I MAX.(CONTINUOUS)
C
Ta=25 C
C
COLLECTOR POWER DISSIPATION P (W)
0
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
50
100
150
200
2
4
6
8
(2)
(1)
(1) Tc=Ta
INFINITE HEAT SINK
(2) NO HEAT SINK
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