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Электронный компонент: KTC3876S

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2001. 2. 24
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SEMICONDUCTOR
TECHNICAL DATA
KTC3876S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(2)=25(Min.) at V
CE
=6V, I
C
=400mA.
Complementary to KTA1505S.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
(Note) : h
FE
(1) Classification O:70 140 Y:120 240 GR:200 400
h
FE
(2) Classification O:25Min. Y:40Min.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
35
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
500
mA
Base Current
I
B
50
mA
Collector Power Dissipation
P
C
150
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
h Rank
Type Name
Marking
Lot No.
W
FE
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=35V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain (Note)
h
FE
(1)
V
CE
=1V, I
C
=100mA
70
-
400
h
FE
(2)
V
CE
=6V, I
C
=400mA
25
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
-
0.1
0.25
V
Base-Emitter Voltage
V
BE
V
CE
=1V, I
C
=100mA
-
0.8
1.0
V
Transition Frequency
f
T
V
CE
=6V, I
C
=20mA
-
300
-
MHz
Collector Output Capacitance
C
ob
V
CB
=6V, I
E
=0, f=1MHz
-
7.0
-
pF