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Электронный компонент: KTC3880S

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2003. 6. 20
1/6
SEMICONDUCTOR
TECHNICAL DATA
KTC3880S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 5
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
Small Reverse Transfer Capacitance
: C
re
=0.7pF(Typ.)
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification R:40 80, O:70 140, Y:100 200
h Rank
Type Name
Marking
Lot No.
AQ
FE
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=18V, I
E
=0
-
-
0.5
A
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
0.5
A
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=1mA
40
-
200
Reverse Transfer Capacitance
C
re
V
CB
=6V, f=1MHz, I
E
=0
-
0.7
-
pF
Transition Frequency
f
T
V
CE
=6V, I
C
=1mA
300
550
-
MHz
Collector-Base Time Constant
C
C
rbb
'
V
CB
=6V, I
E
=-1mA, f=30MHz
-
-
30
pS
Noise Figure
NF
V
CC
=6V, I
E
=-1mA, f=100MHz (Fig.)
-
2.5
5.0
dB
Power Gain
G
pe
15
18
-
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
4
V
Collector Current
I
C
20
mA
Emitter Current
I
E
-20
mA
Collector Power Dissipation
P
C
150
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
2003. 6. 20
2/6
KTC3880S
Revision No : 5
INPUT
R =50
g
0.01F
2.2k
0.01
F
1k
-V (I =-1mA)
E
15pF
CC
V
0.02F
OUTPUT
R =50
L
0.02F
E
1000pF
1000pF
L1
6pF
L1 : 0.8mm SILVER PLATED COPPER WIRE, 4Turns.
10mm ID, 8mm Length.
DUT
y PARAMETERS (Typ.)
(1) COMMON EMITTER (V
CE
=6V, I
E
=-1mA, f=100MHz)
(2) COMMON BASE (V
CE
=6V, I
E
=-1mA, f=100MHz)
CHARACTERISTIC
SYMBOL
TYP.
UNIT
Input Conductance
g
ie
2.9
mS
Input Capacitance
C
ie
10.2
pF
Reverse Transfer Admittance
|y
re
|
0.33
S
Phase Angle of Reverse Transfer Admittance
re
-90
Forward Transfer Admittance
|y
fe
|
40
mS
Phase Angle of Forward Transfer Admittance
fe
-20
Output Conductance
g
oe
45
S
Output Capacitance
C
oe
1.1
pF
CHARACTERISTIC
SYMBOL
TYP.
UNIT
Input Conductance
g
ib
34
mS
Input Capacitance
C
ib
-10
pF
Reverse Transfer Admittance
|y
rb
|
0.27
S
Phase Angle of Reverse Transfer Admittance
rb
-105
Forward Transfer Admittance
|y
fb
|
34
mS
Phase Angle of Forward Transfer Admittance
fb
165
Output Conductance
g
ob
45
S
Output Capacitance
C
ob
1.1
pF
Fig. G
pe
TEST CIRCUIT
2003. 6. 20
3/6
KTC3880S
Revision No : 5
0.1
0.05
-10
-3
-0.5
-0.2
EMITTER CURRENT I (mA)
E
-1
COMMON EMITTER
V =6V
f=100MHz
Ta=25 C
CE
-5
0.3
0.5
1
3
-300
-50
-100
y
re
re
E
y , - I
re
re
y (mS)
REVERSE TRANSFER ADMITTANCE
PHASE ANGLE OF REVERSE TRANSFER
re
re
ADMITTANCE
( )
10
5
-10
-3
-0.5
-0.2
-1
COMMON EMITTER
V =6V
f=100MHz
Ta=25 C
CE
-5
30
50
100
300
1
-10
-3
-0.5
-0.2
EMITTER CURRENT I (mA)
E
-1
COMMON EMITTER
V =6V
f=100MHz
Ta=25 C
CE
V =6V
CE
V =6V
CE
-5
3
5
10
30
C
g
ie
g
oe
C
oe
ie
COMMON EMITTER
V =6V
Ta=25 C
CE
E
ie
ie
C , g - I
INPUT CAPACITANCE C (pF)
ie
INPUT CONDUCTANCE g (mS)
ie
4
COLLECTOR CURRENT
0
C
400
600
BASE CURRENT
B
STATIC CHARACTERISTICS
10
DC CURRENT GAIN h
FE
1
0.1
0.3 0.5
COLLECTOR CURRENT I (mA)
C
h - I
8
12
16
20
200
0
10
20
30
0.8
0.6
0.4
0.2
I (mA)
VOLTAGE V (V)
BASE-EMITTER
BE
I ( A)
VOLTAGE V (V)
COLLECTOR-EMITTER
CE
I =50A
B
100
150
200
250
300
350
400
450
500
0
COMMON
EMITTER
Ta=25 C
FE
C
3
5
10
20
30
50
100
300
EMITTER CURRENT I (mA)
E
E
oe
oe
C , g - I
OUPUT CAPACITANCE C (pF)
oe
OUPUT CONDUCTANCE g (
S)
oe
1
0.5
3
5
10
30
2003. 6. 20
4/6
KTC3880S
Revision No : 5
100
50
30
-5
-1
E
EMITTER CURRENT I (mA)
-0.2
-0.5
-3
-10
5
10
-10
-5
-30
-50
-100
rb
rb
y
1
0.5
0.3
-5
CB
Ta=25 C
f=100MHz
V =6V
COMMON BASE
-1
E
EMITTER CURRENT I (mA)
-0.2
-0.5
-3
-10
0.05
0.1
-100
-50
-300
-500
-1k
E
rb
rb
y , - I
y (mS)
REVERSE TRANSFER ADMITTANCE
PHASE ANGLE OF FORWARD TRANSFER
rb
rb
ADMITTANCE
( )
fe
fe
y
100
50
30
-5
CE
Ta=25 C
f=100MHz
V =6V
COMMON BASE
-1
y (mS)
FORWARD TRANSFER ADMITTANCE
fe
fe
E
EMITTER CURRENT I (mA)
-0.2
-0.5
-3
-10
5
10
-10
-5
-30
-50
-100
CB
Ta=25 C
f=100MHz
V =6V
COMMON BASE
E
fe
fe
y , - I
PHASE ANGLE OF FORWARD TRANSFER
ADMITTANCE
( )
fb
fb
y
100
50
30
-5
CB
Ta=25 C
f=100MHz
V =6V
COMMON BASE
-1
y (mS)
FORWARD TRANSFER ADMITTANCE
fb
fb
E
EMITTER CURRENT I (mA)
-0.2
-0.5
-3
-10
5
10
100
50
300
500
1K
E
fb
fb
y , - I
PHASE ANGLE OF FORWARD TRANSFER
ADMITTANCE
( )
CE
ie
ie
C , g - V
E
ib
ib
C , g - I
INPUT CAPACITANCE C (pF)
ib
INPUT CAPACITANCE C (pF)
ie
INPUT CONDUCTANCE g (mS)
ie
INPUT CONDUCTANCE g (mS)
ib
10
5
-10
-3
-0.5
-0.2
-1
COMMON EMITTER
V =6V
f=100MHz
Ta=25 C
CB
-5
30
50
100
200
1
0.5
3
5
10
20
g
ob
C
ob
C
ie
g
ie
C
ib
g
ib
EMITTER CURRENT I (mA)
E
E
ob
ob
C , g - I
OUPUT CAPACITANCE C (pF)
ob
OUPUT CONDUCTANCE g (
S)
ob
E
Ta=25 C
f=100MHz
I =-1mA
COMMON BASE
CE
COLLECTOR-BASE VOLTAGE V (V)
30
10
5
1
3
1
3
5
10
20
2003. 6. 20
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KTC3880S
Revision No : 5
10
5
30
50
100
300
g
ob
C
ob
CB
ib
ib
C , g - V
INPUT CAPACITANCE C (pF)
ib
INPUT CONDUCTANCE g (mS)
ib
1
0.5
0.3
30
5
y (mS)
REVERSE TRANSFER ADMITTANCE
re
re
CE
COLLECTOR-EMITTER VOLTAGE V (V)
1
3
10
0.05
0.1
COMMON EMITTER
I =-1mA
f=100MHz
Ta=25 C
E
y
re
re
100
50
300
-100
-5
-10
fe
fe
y
E
Ta=25 C
f=100MHz
I =-1mA
COMMON EMITTER
10
5
10
3
1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
COLLECTOR-EMITTER VOLTAGE V (V)
CE
fe
FORWARD TRANSFER ADMITTANCE
y (mS)
5
30
30
50
100
-30
-50
-100
-5
-10
-30
-50
CE
re
re
y , - V
CE
fe
y , - V
fe
PHASE ANGLE OF REVERSE TRANSFER
ADMITTANCE
( )
PHASE ANGLE OF FORWARD TRANSFER
fe
ADMITTANCE
( )
30
5
1
3
10
100
50
30
30
5
1
3
10
5
10
CB
ob
ob
C , g - V
OUPUT CAPACITANCE C (pF)
ob
OUPUT CONDUCTANCE g (
S)
ob
1
0.5
3
5
10
30
CB
COLLECTOR-BASE VOLTAGE V (V)
100
50
30
5
10
1
0.5
3
5
10
CE
oe
oe
C , g - V
OUTPUT CAPACITANCE C (pF)
oe
IOUUT CONDUCTANCE g (
S)
oe
C
oe
C
ib
g
ib
g
oe
E
30
10
30
10
1
COLLECTOR-BASE VOLTAGE V (V)
CB
COLLECTOR-BASE VOLTAGE V (V)
CB
3
COMMON BASE
I =-1mA
f=100MHz
Ta=25 C
E
50
100
300
y
fb
fb
5
100
300
CB
fb
fb
y , - V
y (mS)
FORWARD TRANSFER ADMITTANCE
PHASE ANGLE OF FORWARD TRANSFER
fb
fb
ADMITTANCE
( )
COMMON BASE
I =-1mA
f=100MHz
Ta=25 C
E
COMMON BASE
I =-1mA
f=100MHz
Ta=25 C
E
10
3
1
5
30
Ta=25 C
f=100MHz
I =-1mA
COMMON EMITTER