2002. 2. 20
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC4072V
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
FEATURES
High Current.
Low V
CE(sat).
: V
CE(sat)
250mV at I
C
=200mA/I
B
=10mA.
Complementary to KTA2012V.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
VSM
1.2 0.05
0.8 0.05
0.5 0.05
0.3 0.05
1.2 0.05
0.8 0.05
0.40
0.12 0.05
C
G
H
J
K
0.2 0.05
B
E
D
G
A
H
K
C
J
2
3
1
P
P
P
5
1. EMITTER
2. BASE
3. COLLECTOR
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
15
V
Collector-Emitter Voltage
V
CEO
12
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
500
mA
I
CP
*
1
A
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Type Name
Marking
L Z
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=15V, I
E
=0
-
-
100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A
15
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA
12
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A
6
-
-
V
DC Current Gain
h
FE
V
CE
=2V, I
C
=10mA
270
-
680
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=200mA, I
B
=10mA
-
90
250
mV
Transition Frequency
f
T
V
CE
=2V, I
C
=10mA, f
T
=100MHz
-
320
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
7.5
-
pF
* Single pulse Pw=1mS.
2002. 2. 20
2/3
KTC4072V
Revision No : 2
C
COLLECTOR CURRENT I (mA)
BASE-EMITTER VOLTAGE V (V)
BE
I - V
C
BE
Ta=
125
C
V =2V
I /I =20
CE
V =2V
CE
V =2V
CE
C B
I /I =20
C B
I /I =50
C B
I /I =20
C B
I /I =10
C B
Ta=
25
C
Ta=-40
C
Ta=125 C
Ta=25 C
Ta=-40 C
Ta=25 C
Ta=125 C
Ta=25 C
Ta=-40 C
Ta=25 C
Ta=125 C
Ta=25 C Ta=-40
C
10
1K
30
50
100
300
500
V - I
C
COLLECTOR CURRENT I (mA)
CE(sat)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
VOLTAGE V (mV)
1
3
1
10
30
100
300
1K
3
5
10
30
50
100
300
500
1K
V - I
C
COLLECTOR CURRENT I (mA)
CE(sat)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
VOLTAGE V (mV)
1
3
1
10
30
100
300
1K
3
5
10
30
50
100
300
500
1K
0
1
0.5
1.0
1.5
3
5
10
30
50
100
300
500
1K
f - I
C
COLLECTOR CURRENT I (mA)
T
C
T
TRANSITION FREQUENCY f (MHz)
1
3
10
30
100
300
1K
100
10K
300
500
1K
3K
5K
V - I
C
COLLECTOR CURRENT I (mA)
BE(sat)
C
BE(sat)
BASE-EMITTER SATURATION
VOLTAGE V (mV)
1
3
10
30
100
300
1K
10
1K
30
50
100
300
500
1
3
10
30
100
300
1K
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
C
h - I
FE
C
2002. 2. 20
3/3
KTC4072V
Revision No : 2
C - V , C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
EB
EMITTER-BASE VOLTAGE V (V)
ob
C
ob
CB
ib
COLLECTOR INPUT CAPACITANCE C (PF)
ob
COLLECTOR OUTPUT CAPACITANCE C (PF)
0.1
0.3
1
1
3
10
30
100
3
5
10
30
50
100
300
500
1K
ib
C
ib
EB
I =0A
f=1MHz
Ta=25 C
E
COLLECTOR POWER DISSIPATION P (mW)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
25
50
75
100
125
50
100
150
200
150
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