2003. 3. 27
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC5001D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 5
FEATURES
Low Collector Saturation Voltage.
: V
CE(sat)
=0.13V(Typ.) at (I
C
=4A, I
B
=0.05A)
Large Collector Current
: I
C
=10A(dc) I
C
=15A(10ms, single pulse)
Complementary to KTA1834D/L.
APPLICATION
Low Frequency Power Amplifier.
MAXIMUM RATING (Ta=25 )
DPAK
DIM
MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10
M
0.90 0.1
O
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
P
0.95 MAX
Q
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification Y:120~270, GR:180~390.
DIM
MILLIMETERS
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
2.0 0.2
K
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=20V
-
-
1.0
A
Emitter Cut-off Current
I
EBO
V
EB
=5V
-
-
1.0
A
Collector-Base Breakdown Voltage
BV
CBO
I
C
=50 A
30
-
-
V
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=1mA
20
-
-
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=50 A
6
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=2V, I
C
=0.5A
120
-
390
h
FE
(2)
V
CE
=2V, I
C
=4.0A
82
-
-
Collector Emitter Saturation Voltage
V
CE(sat)
I
C
=4.0A, I
B
=0.05A
-
0.13
0.25
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=4A, I
B
=0.05A
-
0.9
1.2
V
Transition Frequency
f
T
V
CE
=5V, I
E
=-1.5A, f=50MHz
-
150
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
220
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
10
A
I
CP
15
Base Current
I
B
2
A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
2003. 3. 27
2/3
KTC5001D/L
Revision No : 5
C
0.001
COLLECTOR CURRENT I (A)
0
COLLECTOR EMITTER VOLTAGE V (V)
BE
BE
C
I - V
0.2
FE
h - I
C
COLLECTOR CURRENT I (A)
DC CURRENT GAIN h
C
FE
0.01
0.1
1
10
0.4
0.6
0.8
1.0
1.2
1.4
V =2V
CE
Ta=125 C
30
Ta=25 C
-0.1
-0.01
-1
-20
-10
50
100
300
500
1K
2K
COLLECTOR SATURATION
COLLECTOR CURRENT I (A)
-0.01
-0.03
-0.1
-0.3
C
CE(sat)
-3
V - I
CE(sat)
C
VOLTAGE V (mV)
-1
-3
-10 -20
Ta=25 C
50
-10
-30
-100
-300
-1K
I /I =80
B
C
20
Ta=25 C Ta=
-40 C
COLLECTOR EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (A)
0
0
C
CE
I - V
C
CE
2
4
6
8
10
1
2
Ta=25 C
I =0mA
B
5mA
10mA
15mA
20mA
25mA
30mA
35mA
40mA
45mA
50mA
V =5V
CE
2V
1V
f - I
E
EMITTER CURRENT I (A)
-0.01
-0.03
-0.1
-1
T
TRANSITION FREQUENCY f (MHz)
10
T
E
-3
-0.3
f=50MHz
Ta=25 C
V =5V
CE
CB
COLLECTOR BASE VOLTAGE V (V)
C - V
C (pF)
ob
30
0.1
0.3
1
ob
3
10
I =0A
E
30
f=1MHz
Ta=25 C
CB
30
50
100
300
500
1K
50
100
300
1K
500
COLLECTOR OUTPUT CAPACITANCE
2003. 3. 27
3/3
KTC5001D/L
Revision No : 5
COLLECTOR POWER DISSIPATION Pc (W)
0
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
C
0.01
COLLECTOR CURRENT I (A)
0.3
0.03
0.1
1
3
10
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
*
I MAX(PULSE)
C
I MAX
(CONTINUOUS)
C
*
*
10mS
100
mS
*
DC OPERATION T
c=25 C
0.01
0.03
0.1
0.3
1
3
10
30
25
50
75
100
125
150
2
4
6
8
10
12
30
Tc=25 C
Ta=25 C
1
2
1
2
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