2003. 3. 27
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC5103D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
High Power Dissipation : P
C
=1.3W(Ta=25 )
Complementary to KTA1385D/L
MAXIMUM RATING (Ta=25 )
DPAK
DIM
MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10
M
0.90 0.1
O
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
P
0.95 MAX
Q
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Pulse test : PW 50 S, Duty Cycle 2% Pulse
Note) h
FE
(2) Classification : O:160 320, Y:200 400.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
7
V
Collector Current
DC
I
C
5
A
Pulse *
I
CP
8
Base Current
I
B
1
A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
15
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
10
A
Emitter Cut-off Current
I
EBO
V
EB
=7V, I
C
=0
-
-
10
A
DC Current Gain *
h
FE
(1)
V
CE
=1V, I
C
=0.1A
60
-
-
h
FE
(2) (Note) V
CE
=1V, I
C
=2A
160
-
400
h
FE
(3)
V
CE
=2V, I
C
=5A
50
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
I
C
=2A, I
B
=0.2A
-
0.1
0.3
V
Base-Emitter Saturation Voltage *
V
BE(sat)
I
C
=2A, I
B
=0.2A
-
0.9
1.2
V
Switching
Time
Turn On Time
t
on
I
B1
5
B1
I
CC
V =10V
I
B2
I
B2
20sec
I =-I =0.2A
1%
B1
B2
OUTPUT
DUTY CYCLE
INPUT
<
=
-
0.2
1
S
Storage Time
t
stg
-
1.1
2.5
Fall Time
t
f
-
0.2
1
DIM
MILLIMETERS
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
2.0 0.2
K
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
* PW 10ms, Duty Cycle 50%
2003. 3. 27
2/3
KTC5103D/L
Revision No : 3
6
COLLECTOR CURRENT I (A)
C
10
0.8
0.4
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
Pc - Ta
AMBIENT TEMPERATURE Ta ( C)
0
0
POWER DISSIPATION P (W)
C
50
100
150
200
250
5
10
15
20
25
CASE TEMPERATURE Tc ( C)
I DERATING d (%)
0
0
120
50
160
200
100
150
d - T
T
C
T
C
40
80
0
2
20
80
40
60
100
S/b Limite
d
Dissipation
Limite
d
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
1
3
10
30
0.1
C
COLLECTOR CURRENT I (A)
100
0.3
0.5
1
3
5
10
5
50
2m
S*
10mS*
200mS*
Dissipation Limited
S/b Limite
d
V MAX.
CEO
I MAX.
I (Pulse) MAX. *
C
SAFE OPERATING AREA
4
6
8
10
25
75
125
175
20
60
100
140
V (SUS)
CEO
COLLECTOR CURRENT I (A)
C
COLLECTOR-EMITTER VOLTAGE V (V)
CE
1.2
1.6
2.0
2
4
8
I =0mA
B
I =10mA
B
I =20mA
B
I =30mA
B
I =40mA
B
I =60mA
B
I =80mA
B
I =100mA
B
I =150mA
B
I =200mA
B
DC CURRENT GAIN h
FE
0.01
COLLECTOR CURRENT I (A)
C
h - I
FE
C
0.03
0.1
0.3
1
3
10
1
3
5
10
30
50
100
300
500
1k
V =2V
CE
V =1V
CE
C
* SINGLE NONREPETITVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
REVERSE BIAS
Ta=25 C
Tc=25 C
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