2003. 3. 25
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SEMICONDUCTOR
TECHNICAL DATA
KTC9011S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH FREQUENCY APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
FEATURE
High Power Gain : Gpe=29dB(Typ.) at f=10.7MHz.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
35
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
50
mA
Emitter Current
I
E
-50
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=35V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=5V, I
C
=1mA
54
-
198
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA
-
-
0.4
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1mA, f=100MHz
100
-
400
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
2.0
-
pF
Note : h
FE
Classification F:54 80, G:72 108, H:97 146, I:132 198
h Rank
Type Name
Marking
Lot No.
BA
FE
* P
C
: Package Mounted On 99.5% Alumina (10 8 0.6 )
2003. 3. 25
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KTC9011S
Revision No : 1
1
3
10
30
3
0.1
1
5
0.3
0.5
300
10
100
30
50
COMMON EMITTER
I =-1mA
F
F
F
F
F
G.H
G.H
G.H
G.H
G.H
I
I
I
I
F
G.H
I
I
f=455kHz
Ta=25 C
E
C
ie
C
ie
C
ie
g
ie
g
ie
g
ie
CE
Ta=25 C
f=10.7MHz
V =6V
COMMON EMITTER
1
-1
E
EMITTER CURRENT I (mA)
-0.2
-0.5
-3
-5
0.2
0.3
0.5
3
5
100
20
30
50
300
500
CE
ie
C , g - V
ie
COLLECTOR-EMITTER VOLTAGE V (V)
CE
E
Ta=25 C
f=10.7MHz
I =-1mA
COMMON EMITTER
0.5
0.3
5
0.2
3
30
10
3
1
20
30
50
300
100
1
INPUT CAPACITANCE C (pF)
ie
INPUT CONDUCTANCE g (m )
ie
CE
ie
C , g - V
ie
E
ie
C , g - I
ie
COLLECTOR-EMITTER VOLTAGE V (V)
CE
INPUT CAPACITANCE C (pF)
ie
INPUT CONDUCTANCE g (m )
ie
INPUT CAPACITANCE C (pF)
ie
INPUT CONDUCTANCE g (m )
ie
COLLECTOR POWER DISSIPATION
Pc (mW)
0
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
25
50
75
100
125
150
175
100
200
300
400
500
MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
Ta=25 C
1
2
1
2
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