GENERAL PURPOSE APPLICATION.
FEATURES
Including two devices in TES6.
(Thin Extreme Super mini type with 6 pin.)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
P
P
P
5
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
4. Q EMITTER
3. Q COLLECTOR
5. Q BASE
6. Q COLLECTOR
1
2
2. Q BASE
1
1
2
2
2002. 1. 24
1/5
SEMICONDUCTOR
TECHNICAL DATA
KTX101E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
Revision No : 1
Q
1
MAXIMUM RATING (Ta=25 )
1
Q1
Q2
2
3
6
5
4
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
Base Current
I
B
30
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector Power Dissipation
P
C
*
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Q
2
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-150
Base Current
I
B
-30
Q
1 ,
Q
2
MAXIMUM RATING (Ta=25 )
B
Type Name
h Rank
FE
1
2
3
4
5
6
MARKING
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
KTX101E
Revision No : 1
2002. 1. 24
2/5
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-0.1
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
DC Current Gain
h
FE
(Note)
V
CE
=-6V, I
C
=-2
120
-
400
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=-100 , I
B
=-10
-
-0.1
-0.3
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-1
80
-
-
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1
-
4.0
7.0
Noise Figure
NF
V
CE
=-6V, I
C
=-0.1 , f=1 , Rg=10
-
1.0
10
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2
120
-
400
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=100 , I
B
=10
-
0.1
0.25
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1
80
-
-
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1
-
2.0
3.5
Noise Figure
NF
V
CE
=6V, I
C
=0.1 , f=1 , Rg=10
-
1.0
10
Q
1
ELECTRICAL CHARACTERISTICS (Ta=25 )
Q
2
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note)h
FE
Classification : Y(4)120~240, GR(6)200~400
Note)h
FE
Classification : Y(4)120~240, GR(6)200~400
2002. 1. 24
3/5
KTX101E
Revision No : 1
C
COLLECTOR CURRENT I (mA)
0
40
30
DC CURRENT GAIN h
FE
3
1
0.3
0.1
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
Q (NPN TRANSISTOR)
CE
1
CE
C
I - V
h - I
V - I
C
COLLECTOR CURRENT I (mA)
0.1
0.1
BASE-EMITTER SATURATION
BASE CURRENT I (
A)
B
0.3
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
f - I
C
COLLECTOR CURRENT I (mA)
0.1
3k
T
TRANSITION FREQUENCY f (MHz)
10
COLLECTOR-EMITTER SATURATION
0.01
0.1
COLLECTOR CURRENT I (mA)
C
V - I
1
2
3
4
5
6
7
80
120
160
200
240
I =0.2mA
B
COMMON EMITTER
Ta=25 C
FE
C
10
30
100
300
50
100
300
500
1k
CE(sat)
C
VOLTAGE V (V)
CE(sat)
0.3
1
3
10
30
100
300
0.03
0.05
0.1
0.3
0.5
1
Ta
=100 C
Ta=25 C
Ta=-25 C
COMMON EMITTER
I /I =10
C B
C
BE(sat)
VOLTAGE V (V)
BE(sat)
0.3
1
10
30
100
300
3
0.3
0.5
1
3
5
10
COMMON EMITTER
I /I =10
Ta=25 C
C B
T
C
0.3
1
3
10
30
100
300
30
50
100
300
500
1k
COMMON EMITTER
V =10V
Ta=25 C
CE
B
BE
0.2
0.4
0.6
0.8
1.0
1.2
1
3
10
30
100
300
1k
0.5mA
0
1.0mA
2.0mA
3.0mA
5.0mA
6.0mA
10
COMMON EMITTER
Ta=100 C
Ta=25 C
Ta=-25 C
V =6V
CE
CE
V =1V
3k
COMMON
EMITTER
V =6V
CE
Ta=10
0
C
Ta=25
C
Ta=-25
C
2002. 1. 24
4/5
KTX101E
Revision No : 1
C
COLLECTOR CURRENT I (mA)
0
-40
30
DC CURRENT GAIN h
FE
3k
-3
-1
-0.3
-0.1
COLLECTOR CURRENT I (mA)
C
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
Q (PNP TRANSISTOR)
2
CE
C
I - V
h - I
V - I
C
COLLECTOR CURRENT I (mA)
-0.1
-0.1
BASE-EMITTER SATURATION
BASE CURRENT I (
A)
B
-0.3
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
f - I
C
COLLECTOR CURRENT I (mA)
-0.1
3k
T
TRANSITION FREQUENCY f (MHz)
10
COLLECTOR-EMITTER SATURATION
-0.01
-0.1
COLLECTOR CURRENT I (mA)
C
V - I
-1
-2
-3
-4
-5
-6
-7
-80
-120
-160
-200
-240
I =-0.2mA
B
B
I =-0.5mA
B
I =-1.0mA
B
I =-1.5mA
B
I =-2.0mA
B
I =0mA
COMMON EMITTER
Ta=25 C
FE
C
-10
-30
-100
-300
50
100
300
500
1k
Ta=100 C
Ta=100 C
Ta=25 C
Ta=-25 C
Ta=-25 C
V =-6V
V =-6V
CE
CE
V =-1V
V =-1V
COMMON EMITTER
CE(sat)
C
VOLTAGE V (V)
CE(sat)
-0.3
-1
-3
-10
-30
-100
-300
-0.03
-0.05
-0.1
-0.3
-0.5
-1
Ta=100
C
Ta=25 C
Ta=-25 C
COMMON EMITTER
I /I =10
C B
C
BE(sat)
VOLTAGE V (V)
BE(sat)
-0.3
-1
-10
-30
-100
-300
-3
-0.3
-0.5
-1
-3
-5
-10
COMMON EMITTER
I /I =10
Ta=25 C
C B
T
C
-0.3
-1
-3
-10
-30
-100
-300
30
50
100
300
500
1k
COMMON EMITTER
V =-10V
Ta=25 C
CE
B
BE
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-3
-10
-30
-100
-300
-1k
COMMON EMITTER
V =-6V
CE
Ta=100
C
Ta=25
C
Ta=-
25
C
2002. 1. 24
5/5
KTX101E
Revision No : 1
COLLECTOR POWER DISSIPATION P (mW)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
25
50
75
100
125
50
100
150
200
250
150
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