2003. 3. 27
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SEMICONDUCTOR
TECHNICAL DATA
MJD117/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 4
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: h
FE
=1000(Min.), V
CE
=-4V, I
C
=-1A.
Low Collector-Emitter Saturation Voltage.
Straight Lead (IPAK, "L" Suffix)
Complementary to MJD112/L.
MAXIMUM RATING (Ta=25 )
DPAK
DIM
MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10
M
0.90 0.1
O
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
P
0.95 MAX
Q
+
_
+_
+
_
+
_
+
_
+_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Sustaining Voltage
V
CEO(SUS)
I
C
=-30mA, I
B
=0
-100
-
-
V
Collector Cut-off Current
I
CEO
V
CE
=-50V, I
B
=0
-
-
-20
A
I
CBO
V
CB
=-100V, I
E
=0
-
-
-20
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-2
mA
DC Current Gain
h
FE
V
CE
=-3V, I
C
=-0.5A
500
-
-
V
CE
=-3V, I
C
=-2A
1,000
12,000
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-2A, I
B
=-8mA
-
-
-2.0
V
Base-Emitter On Voltage
V
BE(ON)
V
CE
=-3V, I
C
=-2A
-
-
-2.8
V
Current Gain Bandwidth Product
f
T
V
CE
=-10V, I
C
=0.75A, f=1MHz
25
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=0.1MHz
-
-
200
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-100
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-2
A
Pulse
-4
Base Current
DC
I
B
-50
mA
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
20
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
C
B
E
R
10k
0.6k
R
1
2
=
=
DIM
MILLIMETERS
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
2.0 0.2
K
+
_
+
_
+
_
+
_
+_
+_
+_
+
_
+
_
+
_
+
_
+
_
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