2000. 2. 26
1/2
SEMICONDUCTOR
TECHNICAL DATA
MPSA13/14
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATIONS.
DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
V
CES
I
C
=0.1mA
30
-
-
V
Emitter Cut-off Current
I
CBO
V
CB
=30V
-
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=10V
-
-
100
nA
DC Current Gain
MPSA13
h
FE
I
C
=10mA, V
CE
=5V
5,000
-
-
-
MPSA14
10,000
-
-
MPSA13
I
C
=100mA, V
CE
=5V
10,000
-
-
MPSA14
20,000
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=0.1mA
-
-
1.5
V
Base-Emitter Voltage
V
BE
I
C
=100mA, V
CE
=5V
-
-
2.0
V
Current Gain Bandwith Product
f
T
I
C
=10mA, f=100MHz, V
CE
=5V
125
-
-
MHz
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CES
30
V
Emitter-Base Voltage
V
EBO
10
V
Collector Current
I
C
500
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
2000. 2. 26
2/2
MPSA13/14
Revision No : 3
3K
DC CURRENT GAIN h
FE
1
COLLECTOR CURRENT I (A)
C
C
FE
h - I
3
10
30
100
300
1K
5K
10K
30K
50K
100K
200K
V =5V
CE
f - I
T
C
C
COLLECTOR CURRENT I (mA)
1
T
TRANSITION FREQUENCY f (MHz)
30
50
300
500
100
V =5V
CE
3
5
10
30
50
100
0.2
5
5
COLLECTOR CURRENT I (mA)
C
0.3
0.5
1
3
10
30
50
100
300 500
COLLECTOR-EMITTER SATURATION
VOLTAGE V (sat), V (sat) (V)
BE
I =1000I
C
B
V (sat)
V (sat)
BE
CE
V (sat), V (sat) - I
CE
C
BASE-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
V =5V
0
30
50
1
3
5
10
C
100
CE
200
I - V
BE
BE
0.4
0.8
1.2
1.6
2.0
2.4
2.8
C
CE
BE
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