1997. 10. 21
1/3
SEMICONDUCTOR
TECHNICAL DATA
MPSA44/45
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH VOLTAGE APPLICATION.
FEATURES
High Breakdown Voltage.
Collector Power Dissipation : P
C
=625mW.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
Voltage
MPSA44
V
CBO
500
V
MPSA45
400
Collector-Emitter
Voltage
MPSA44
V
CEO
400
V
MPSA45
350
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
300
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base
Breakdown Voltage
MPSA44
V
(BR)CBO
I
C
=100 A, I
E
=0
500
-
-
V
MPSA45
400
Collector-Emitter
Breakdown Voltage (1)
MPSA44
V
(BR)CEO
I
C
=1mA, I
B
=0
400
-
-
V
MPSA45
350
Collector-Emitter Breakdown Voltage (2)
V
(BR)CES
I
C
=100 A, I
B
=0
400
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
6.0
-
-
V
Collector Cut off Current
MPSA44
I
CBO
V
CB
=400V, I
E
=0
-
-
100
nA
MPSA45
V
CB
=320V, I
E
=0
100
Collector Cut off Current
MPSA44
I
CES
V
CE
=400V, I
B
=0
-
-
500
nA
MPSA45
V
CE
=320V, I
B
=0
500
Emitter Cutoff Current
I
EBO
V
EB
=4V, I
C
=0
-
-
100
nA
DC Current Gain *
h
FE
V
CE
=10V, I
C
=1mA
40
-
-
V
CE
=10V, I
C
=10mA
50
-
200
V
CE
=10V, I
C
=50mA
45
-
-
V
CE
=10V, I
C
=100mA
40
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
I
C
=10mA, I
B
=1mA
-
-
0.5
V
Base-Emitter Saturation Voltage *
V
BE(sat)
I
C
=10mA, I
B
=1mA
-
-
0.75
V
1999. 11. 30
2/3
MPSA44/45
Revision No : 3
FE
CE
B
TIME t (
S)
COLLECTOR CURRENT I (mA)
C
TURN-ON SWITCHING CHARACTERISTICS
C
COLLECTOR CURRENT I (A)
DC CURRENT GAIN h
COLLECTOR CURRENT I (mA)
TIME t (
S)
C
TURN-OFF SWITCHING CHARACTERISTICS
SATURATION VOLTAGE
COLLECTOR CURRENT I (mA)
C
ib
CAPACITANCE C (pF), C (pF)
BASE CURRENT I (
A)
COLLECTOR-BASE VOLTAGE V (V)
COLLECTOR EMITTER VOLTAGE V (V)
CB
COLLECTOR SATURATION REGION
COMMON EMITTER
ob
V , V (V)
BE(sat)
CE(sat)
0.1
100
10
3
1
h - I
1
1
0k
10
100
1
3
0.1
10
100
0.1
1
0
10
100
V , V - I
10
100
0
0.1
1
1k
10k
10
100
C , C - V
FE
C
0
20
40
60
80
100
120
140
160
1k
180
200
V =10V
CE
30
0.3
0.5
1
3
5
10
V =150V
I /I =10
Ta=25 C
V (OFF)=4V
CC
C
B
BE
tr
td
30
0.3
0.5
1
3
5
10
30
50
100
ts
tf
V =150V
I /I =10
Ta=25 C
CC
C
B
ib
ob
CB
1k
1
3
5
10
30
50
100
300
500
1k
C
C
ib
ob
Ta=25 C
f=1MHz
BE(sat)
CE(sat)
C
1k
0.2
0.4
0.6
0.8
1.0
V
@I /I =10
BE(sat)
C B
@V =10V
BE(on)
V
CE
V
@I /I =10
C B
CE(sat)
100k
0.1
0.2
0.3
0.4
0.5
I =1mA
C
I =10mA
C
I =50mA
C
Ta=25 C
Ta=25 C
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