1999. 11. 30
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SEMICONDUCTOR
TECHNICAL DATA
MPSA62/63/64
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
FEATURES
Complementary to MPSA13/14.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
Voltage
MPSA62
V
CBO
-20
V
MPSA63/64
-30
Collector-Emitter
Voltage
MPSA62
V
CES
-20
V
MPSA63/64
-30
Emitter-Base Voltage
V
EBO
-10
V
Collector Current
I
C
-500
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter
Breakdown Voltage
MPSA62
V
(BR)CES
I
C
=-0.1mA, I
B
=0
-20
-
-
V
MPSA63/64
-30
-
-
Collector Cut-off
Current
MPSA62
I
CBO
V
CB
=-15V, I
E
=0
-
-
-0.1
A
MPSA63/64
V
CB
=-30V, I
E
=0
Emitter Cut-off Current
I
EBO
V
EB
=-10V, I
C
=0
-
-
-0.1
A
DC Current Gain
MPSA62
h
FE
I
C
=-10mA, V
CE
=-5V
20,000
-
-
MPSA63
5,000
-
-
MPSA64
10,000
-
-
MPSA63
I
C
=-100mA, V
CE
=-5V
10,000
-
-
MPSA64
20,000
-
-
Collector-Emitter
Saturation Voltage
MPSA62
V
CE(sat)
I
C
=-10mA, I
B
=-0.01mA
-
-
-1.0
V
MPSA63/64
I
C
=-100mA, I
B
=-0.1mA
-
-
-1.5
Base Emitter Voltage
MPSA62
V
BE
I
C
=-10mA, V
CE
=-5V
-
-
-1.4
V
MPSA63/64
I
C
=-100mA, V
CE
=-5V
-
-
-2.0
Current Gain
Bandwith Product
MPSA63/64
f
T
I
C
=-10mA, f=100MHz, V
CE
=-5V
125
-
-
MHz
*Pulse Test : Pulse Width 300 S, Duty Cycle 2%
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