2005. 6. 8
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SEMICONDUCTOR
TECHNICAL DATA
PG05DBVSC
TVS Diode for ESD
Protection in Portable Electronics
Revision No : 1
Protection in Portable Electronics Applications.
FEATURES
50 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 5A(tp=8/20 s)
Bidirectional Type Pin Configuration Structure.
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA's)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
MAXIMUM RATING (Ta=25 )
VSC
DIM
MILLIMETERS
A
B
C
D
E
1.4
0.05
CATHODE MARK
C
D
B
A
E
F
F
1.0
0.05
0.6
0.05
0.28
0.03
0.5
0.05
0.12
0.03
2
1
1. ANODE
2. ANODE
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Peak Pulse Power (tp=8/20 s)
P
PK
50
Junction Temperature
T
j
-55 150
Storage Temperature
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Stand-Off Voltage
V
RWM
-
-
-
5
V
Reverse Breakdown Voltage
V
BR
I
t
=1mA
5.8
-
7.8
V
Reverse Leakage Current
I
R
V
RWM
=5V
-
-
5
A
Junction Capacitance
C
J
V
R
=0V, f=1MHz
-
-
60
pF
Marking
5B
2
1
2
1
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PG05DBVSC
Revision No : 1
NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME
PULSE DURATION TP (
s)
1
10
PP
PEAK PULSE POWER P (KW)
100
10
100
1K
Peak Pulse Power
8/20us
Average Power
Waveform
Parameters :
tr=8
s
e
-t
td=20
s
td=lpp/2
RATED POWER OR I (%)
0
PP
110
70
50
25
0
AMBIENT TEMPERATURE Ta ( C)
POWER DERATION CURVE
75
100
125
150
10
20
30
40
80
90
50
100
60
PEAK PULSE CURRENT I (%)
0
PP
110
70
10
5
0
TIME (
s)
PULSE WAVEFORM
15
20
25
30
10
20
30
40
80
90
50
100
60
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