2002. 6. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP112F
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: h
FE
=1000(Min.), V
CE
=4V, I
C
=1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP117F.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
DC
I
C
2
A
Pulse
I
CP
4
Base Current
DC
I
B
50
mA
Collector Power
Dissipation
Ta=25
P
C
2
W
Tc=25
20
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-65 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CEO
V
CE
=50V, I
B
=0
-
-
2
mA
I
CBO
V
CB
=100V, I
E
=0
-
-
1
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
2
mA
DC Current Gain
h
FE
V
CE
=4V, I
C
=1A
1000
-
-
V
CE
=4V, I
C
=2A
500
-
-
Collector-Emitter Sustaining Voltage
V
CEO(SUS)
I
C
=30mA, I
B
=0
100
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=2A, I
B
=8mA
-
-
2.5
V
Base-Emitter On Voltage
V
BE(ON)
V
CE
=4V, I
C
=2A
-
-
2.8
V
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=0.1MHz
-
-
100
pF
C
B
E
R
10k
0.6k
R
1
2
=
=
EQUIVALENT CIRCUIT
2002. 6. 25
2/2
TIP112F
Revision No : 0
D
POWER DISSIPATION P (W)
0
0
CASE TEMPERATURE Ta ( C)
D
P - Ta
h - I
C
COLLECTOR CURRENT I (A)
0.01
100K
FE
10
DC CURRENT GAIN h
FE
C
0.1
1
10
30
100
300
10K
30K
50
100
150
200
5
10
15
20
25
30
V =4V
CE
10
0.01
0.1
0.3
1
3
30
100
0.1
1
10
I /I =500
C
1
CB
COLLECTOR-BASE VOLTAGE V (V)
C - V
CAPACITANCE C (pF)
CB
0.01
SATURATION VOLTAGE
BE(sat)
COLLECTOR CURRENT I (A)
C
CE(sat)
BE(sat)
V , V - I
ob
ob
0.1
1
10
100
3
5
10
30
50
100
300
500
1k
f=0.1MHz
C
V ,V (V)
CE(sat)
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
1
C
0.4
COLLECTOR CURRENT I (A)
COLLECTOR CURRENT I (A)
C
0.1
5
1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
2
3
4
5
I =150
A
B
3
10
30
50
100
0.3
0.5
1
3
5
10
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
I MAX(PULSED)
C
DC OPERATION
1ms
0.8
1.2
1.6
2.0
200
A
250
A
300
A
400
A
450
A
500
A
350
A
BE(sat)
V
CE(sat)
V
B
5ms
Tc=25 C
PDF 
ZIP