SPEC NO: DSAB6765
REV NO: V.3
DATE: MAY/11/2003
PAGE: 1 OF 5
APPROVED: J.LU
CHECKED: Allen Liu
DRAWN: X.T.HU
AAF5060PBESURVG
BLUE / HYPER RED / GREEN
5.0mm x 6.0mm FULL COLOR LED LAMP
Description
The Blue source color devices are made with InGaN on
SiC Light Emitting Diode.
The Hyper Red source color devices are made with DH
InGaAlP on GaAs substrate Light Emitting Diode.
The Green source color devices are made with InGaN
on SiC Light Emitting Diode.
Static electricity and surge damage the LEDS.
It is recommended to use a wrist band or
anti-electrostatic glove when handling the LEDs.
All devices, equipment and machinery must be
electrically grounded
Package Dimensions
Features
l
OUTSTANDING MATERIAL EFFICIENCY.
l
RELIABLE AND RUGGED.
l
WATER CLEAR LENS.
l
LOW POWER CONSUMPTION.
l
ONE BLUE, ONE RED AND ONE GREEN CHIPS IN
ONE PACKAGE.
l
CAN PRODUCE ANY COLOR IN VISIBLE SPECTRUM,
INCLUDING WHITE LIGHT.
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
0
.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subject to change without notice.
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
DISCHARGE
SENSITIVE
DEVICES
SPEC NO: DSAB6765
REV NO: V.3
DATE: MAY/11/2003
PAGE: 2 OF 5
APPROVED: J.LU
CHECKED: Allen Liu
DRAWN: X.T.HU
Selection Guide
Electrical / Optical Characteristics at T
A
=25
C
lo
b
m
yS lo
b
m
yS lo
b
m
yS lo
b
m
yS lo
b
m
yS
ret
e
m
ar
a
P
ret
e
m
ar
a
P
ret
e
m
ar
a
P
ret
e
m
ar
a
P
ret
e
m
ar
a
P
ec
iv
e
D ec
iv
e
D ec
iv
e
D ec
iv
e
D ec
iv
e
D
.p
yT .p
yT .p
yT .p
yT .p
yT
.x
a
M .x
a
M .x
a
M .x
a
M .x
a
M
sti
n
U sti
n
U sti
n
U sti
n
U sti
n
U
sn
oit
id
no
C
ts
eT
sn
oit
id
no
C
ts
eT
sn
oit
id
no
C
ts
eT
sn
oit
id
no
C
ts
eT
sn
oit
id
no
C
ts
eT
ka
ep
ht
gn
el
ev
a
W
ka
e
P
eu
lB
de
R
re
py
H nee
rG
56
4 04
6 02
5
m
n
I
F
A
m
02
=
D
ht
gn
el
ev
a
W
et
an
im
o
D
eu
lB
de
R
re
py
H nee
rG
07
4 82
6 52
5
m
n
I
F
A
m
02
=
2/
1
ht
di
w-
fla
H
en
iL
lar
tc
ep
S
eu
lB
de
R
re
py
H nee
rG
52
72
83
m
n
I
F
A
m
02
=
C
ec
na
tic
ap
a
C
eu
lB
de
R
re
py
H nee
rG
01
154
54
F
p
V
F
z
H
M
1=
f;
V
0=
V
F
eg
atl
oV
dr
a
wr
oF
eu
lB
de
R
re
py
H nee
rG
7.
3 9.
10.
4
3.
4 5.
25.
4
V
I
F
A
m
02
=
I
R
tn
err
u
C
es
re
ve
R
llA
01
A
u
V
R
V
5
=
Absolute Maximum Ratings at T
A
=25
C
.o
N
tra
P
.o
N
tra
P
.o
N
tra
P
.o
N
tra
P
.o
N
tra
P
ec
iD ec
iD ec
iD ec
iD ec
iD
ep
yT
sn
eL
ep
yT
sn
eL
ep
yT
sn
eL
ep
yT
sn
eL
ep
yT
sn
eL
)d
c
m(
vI
)d
c
m(
vI
)d
c
m(
vI
)d
c
m(
vI
)d
c
m(
vI
A
m
05
*
A
m
03
@
gn
iw
ei
V
gn
iw
ei
V
gn
iw
ei
V
gn
iw
ei
V
gn
iw
ei
V elg
n
A
.ni
M .ni
M .ni
M .ni
M .ni
M
.p
yT .p
yT .p
yT .p
yT .p
yT
2
/
1
2 2
/
1
2 2
/
1
2 2
/
1
2 2
/
1
2
G
V
R
U
S
E
B
P
06
05
F
A
A
)N
a
G
nI(
E
U
L
B
R
A
E
L
C
R
E
T
A
W
01
1
05
2
0
01
)PI
A
a
G
nI(
D
E
R
R
E
P
Y
H
08
3*
00
5*
)N
a
G
nI(
N
E
E
R
G
08
1
05
3
ret
e
m
ar
a
P
ret
e
m
ar
a
P
ret
e
m
ar
a
P
ret
e
m
ar
a
P
ret
e
m
ar
a
P
eu
lB eu
lB eu
lB eu
lB eu
lB
de
R
re
py
H
de
R
re
py
H
de
R
re
py
H
de
R
re
py
H
de
R
re
py
H
ne
er
G ne
er
G ne
er
G ne
er
G ne
er
G
sti
n
U sti
n
U sti
n
U sti
n
U sti
n
U
]1[
no
ita
pi
ss
id
re
w
o
Pl
at
oT
05
3
W
m
tn
err
u
C
dr
a
wr
oF
C
D
03
05
03
A
m
]2[
tn
err
u
C
dr
a
wr
oF
ka
e
P
06
1
58
1
05
1
A
m
eg
atl
oV
es
re
ve
R
5
5
5
V
er
ut
ar
ep
m
eT
eg
ar
ot
S/
gn
ita
re
p
O
04
-
58
+
oT
C
C
]3[
er
ut
ar
ep
m
eT
re
dl
o
S
da
eL
06
2
sd
no
ce
S
5r
oF
C
Notes:
1
.
1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
2. * Luminous intensity with asterisk is measured at 50mA.
Notes:
1. Within 350mW at all chips are lightened.
2. 1/10 Duty Cycle, 0.1ms Pulse Width.
3. 2mm below package base.
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