PHOTOCOUPLER
SPEC NO: DSAD1560
REV NO: V.1
DATE: APR/28/2003
PAGE: 1 OF 8
APPROVED: J.Lu
CHECKED:Tracy Deng
DRAWN: F.Y.YUAN
KB847-M
GaAs light emitting diode and an NPN silicon phototransistor.
2.Registers, copiers, automatic vending machines
3.System appliances, measuring instruments
5.Signal transmission between circuits of different potentials and impedances
4.Programmable logic controller
APPLICATIONS
1.Computer terminals
3.Solid insulation thickness between emitting diode and output phototransistor: >= 0.6mm.
2.The lead pitch is 2.54mm
.
PHOTOCOUPLER SERIES
1.The KB847-M (4-channel) is optically coupled isolators containing a
3.Long creepage distance type.
KB847-M:4 channel type.
4.Recognized by UL and CUL, file NO. E225308
1.High isolation voltage between input and output (Viso=5000 Vrms)
2.Compact dual-in-line package
DESCRIPTION
FEATURES
SINGLE TRANSISTOR TYPE
GENERAL PURPOSE
HIGH ISOLATION VOLTAGE
PHOTOCOUPLER
SPEC NO: DSAD1560
REV NO: V.1
DATE: APR/28/2003
PAGE: 2 OF 8
APPROVED: J.Lu
CHECKED:Tracy Deng
DRAWN: F.Y.YUAN
KB847-M
*
Absolute Maximum Ratings (T
)
=25
C)
*1
40 to 60% RH,AC for 1 minute.
*2
For 10 seconds.
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C
Lead Bending Type for long creepage distance
* PACKAGE DIMENSIONS (UNIT: mm)
K
B
817
-
M
K
B
817
-
M
K
B
817
-
M
K
B
817
-
M
Anode
7.62[.3]
0.25[.01]0.1
10.16 [.4]
4
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
2, 4, 6, 8. Cathode
1, 3, 5, 7. Anode
19.82[0.78]
1.2[.047]
0.3
0.9[.035]
0.2
3.
5[
0.
13
8]
2.
80
[.
11
0]
0.5[.02] 0.1
mark
1
6.
9[
.27
2
]
8
1
3
2
2.
60
[.
10
2]
0.3
5 6 7 8
TOLERANCE : 0.5[0.02 ] UNLESS OTHERWISE NOTED.
13
Internal connection
diagram
Top View
KB847-M
2.54[.10]0.25
16
9
15
16
14
12 11 10 9
PHOTOCOUPLER
SPEC NO: DSAD1560
REV NO: V.1
DATE: APR/28/2003
PAGE: 3 OF 8
APPROVED: J.Lu
CHECKED:Tracy Deng
DRAWN: F.Y.YUAN
KB847-M
I
CTR=
X 100%
KB847AD-M
80 to 600
A,B,C or D
L,A,B,C,D or No mark
KB847-M
50 to 600
KB847D-M
300 to 600
D
KB847CD-M
KB847BD-M
KB847AC-M
KB847BC-M
KB847AB-M
200 to 600
C or D
B,C or D
A,B or C
130 to 600
80 to 400
B or C
A or B
130 to 400
80 to 260
Rank mark
KB847A-M
KB847C-M
KB847B-M
KB847L-M
Model No.
.
80 to 160
A
C
B
200 to 400
130 to 260
L
50 to 100
CTR (%)
* Electro-optical Characteristics
I
F
=5mA, V
CE
=5V
50
CTR
Current transfer ratio
Collector-emitter saturation voltage
Rise time
Fall time
Classification table of current transfer ratio is shown below.
Response time
Ic
Cut-off frequency
Transfer
charact-
eristics
r
t
V
CE
=2V, I
C
=2mA
R
L
=100
[
f
t
I
F
=20mA, I
C
=1mA
V
CE
=5V, I
C
=2mA
R
L
=100
[
, -3dB
c
f
V
CE(
sat
)
Input
Peak forward voltage
Reverse current
Collector dark current
Output
*1
Forward voltage
Parameter
V
FM
I
FM
=0.5A
I
CEO
I
R
V
CE
=20V,I
F
=0mA
V
R
=4V
V
F
Symbol
I
F
=20mA
Conditions
Min.
600
%
C
4
18
3
18
C
80
kH
z
0.1
0.2V
V
3.0
-7
10
A
10
C
1.21.4
V
Max.
Typ.
Unit
(T
)
=25
C)
PHOTOCOUPLER
SPEC NO: DSAD1560
REV NO: V.1
DATE: APR/28/2003
PAGE: 4 OF 8
APPROVED: J.Lu
CHECKED:Tracy Deng
DRAWN: F.Y.YUAN
KB847-M
Fig. 3 Collector Current vs.
Collector-emitter Voltage
Fig. 4 Relative Current Transfer Ratio
vs. Ambient Temperature
Fig. 1 Current Transfer Ratio vs.
Forward Current
Fig. 2 Forward Current vs.
Forward voltage
Fig. 5 Collector-emitter Saturation
Voltage vs. Ambient Temperature
Fig. 6 Collector Dark Current vs.
Ambient Temperature
PHOTOCOUPLER
SPEC NO: DSAD1560
REV NO: V.1
DATE: APR/28/2003
PAGE: 5 OF 8
APPROVED: J.Lu
CHECKED:Tracy Deng
DRAWN: F.Y.YUAN
KB847-M
g
[
Fig. 10 Frequency Response
Test Circuit for Frequency Response
[
[
[
Fig. 9 Response Time vs.
Load Resistance
Fig. 7 Forward Current vs.
Ambient Temperature
Fig. 8 Collector Power Dissipation vs.
Ambient Temperature
Test Circuit for Response Time
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