- 1-
C L - 1 K L 3
Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
The CL-1KL3 is a high-power GaAlAs IRED mounted
in a durable, hermetically sealed TO-18 metal can
package. The output power is high compared to GaAs
IREDs (Po=Typ. 30mW/sr)
F E A T U R E S
High-output power
Narrow beam angle
D u r a b l e
High reliability in demanding environments
A P P L I C A T I O N S
Optical emitters
Optical switches
E n c o d e r s
Smoke sensors
D I M E N S I O N S
(Unit : mm)
R a t i n g
S y m b o l
I t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Pulse forward current
* 1
Power dissipation
Operating temp.
Storage temp.
Soldering temp.
* 2
V
R
I
F
I
F P
P
D
T o p r .
T s t g .
T s o l .
5
1 0 0
1
1 7 0
- 3 0 ~ + 1 0 0
- 4 0 ~ + 1 1 0
2 6 0
V
m A
A
m W
U n i t
( T a = 2 5)
*1. pulse width tw =100
sec.period T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
Forward voltage
Reverse current
C a p a c i t a n c e
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
( T a = 2 5)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 1 0 0 m A
V
R
= 5 V
f = 1 M H z
I
F
= 1 0 0 m A
I
F
= 1 0 0 m A
I
F
= 1 0 0 m A
I t e m
T y p .
1 . 4
2 0
3 0
8 8 0
5 0
1 7
V
F
I
R
C t
P
O
p
1 . 7
1 0
V
A
p F
m W / s r
n m
n m
d e g .
S y m b o l
C o n d i t i o n s
M i n .
M a x .
U n i t .
- 2-
C L - 1 K L 3
Infrared Emitting Diodes(GaAlAs)
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current Vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
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