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Электронный компонент: K4N35

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Photocoupler
FEATURES
Switching Time - Typ. 3
s
Collector-Emitter Voltage : Min.30V
Current Transfer Ratio : Typ.100% (at I
F
=10mA, V
CE
=10V)
Electrical Isolation Voltage : AC2500V
rms
UL Recognized File No. E107486
APPLICATIONS
Interface between two circuits of different potential
Traffic Controller System
Programmable Controller
MAXIMUM RATINGS (Ta=25
)
*1. Input current with 100
s pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
*4. Customer Option
mW
Input to Output Isolation Voltage
*2
Parameter
Symbol
Rating
Unit
Input
Forward Current I
F
60
Total Power Dissipation
Peak Forward Current
*1
I
FP
3
P
tot
200
mA
V
A
Power Dissipation P
D
70 mW
Reverse Voltage
V
R
5
Emitter-Collector Breakdown Voltage
BV
ECO
6
Collector-Base Breakdown Voltage
BV
CBO
70
V
V
V
Collector Current I
C
50 mA
Collector-Emitter Breakdown Voltage
BV
CEO
35
*4
Collector Power Dissipation P
C
150 mW
Vending Machine, Voltage Regulator
Operating Temperature T
opr
-30~+100
AC2500
Storage Temperature T
stg
-55~+125
Output
Lead Soldering Temperature
*3
T
sol
260
K4N35 K4N36 K4N37
These Photocouplers consist of a Gallium Arsenide Infrared Emitting
Diode and a Silicon NPN Phototransistor in 6-pin package.
V
iso
V
rms
DIMENSION
(Unit : mm)
1/3
6
.
4
0
.
2
5
8.9 0.25
2.54 0.25
1
2
3
1.2
0.5
3
.
8
0
.
2
5
2
.
7
M
i
n
.
0
.
5
1
M
i
n
.
7.62 0.25
6.4
0.25
0 -15
6 5 4
Orientation Mark
3
2
1
6 5 4
PIN NO. AND INTERNAL
CONNECTION DAGRAM
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25
, unless otherwise noted)
I
F
=10mA
V
R
=5V -
V=0, f=1MHz
I
C
=1mA
I
E
=0.1mA
I
C
=0.1mA
I
F
=0, V
CE
=10V
V
CE
=0, f=1MHz
I
F
=10mA, I
C
=0.5mA
V=0, f=1MHz
V
CC
=10V, R
L
=100
I
C
=2mA
*5. CTR=(I
C
/I
F
) X 100 (%)
- 10
Collector Dark Current
I
CEO
-
-
50
nA
Reverse Current
I
R
Collector-Base Breakdown Voltage
Input-Output Isolation Resistance
Input-Output Capacitance
Capacitance
Current Transfer Ratio
*5
Collector-Emitter Saturation Voltage
C
CE
C
IO
Input
Output
Forward Voltage
Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
V
V
V
70
-
-
-
6
-
-
10
10
pF
%
V
pF
Symbol
V
F
-
tr
-
R
IO
0.15
1
-
35
Max.
1.30
-
-
Unit.
pF
-
-
0.3
-
-
3
-
Typ.
1.15
V
K4N35 K4N36 K4N37
Parameter
Min.
-
30
100
3
10
11
-
-
10
-
Coupled
Rise Time
Fall Time
Condition
tf
C
T
-
CTR
I
F
=10mA, V
CE
=10V
RH=40~60%, V=500V
BV
CEO
V
CE(SAT)
BV
ECO
BV
CBO
2/3
Photocoupler
Photocoupler
K
4N35 K4N36 K4N37
3/3
Ambient Temperature T
a
(
)
Forward Current vs.
Ambient Temperature
0
-20 0 20
F
o
r
w
a
r
d

C
u
r
r
e
n
t
I
F

(
m
A
)
10
20
40
30
50
40 60 100
Collector-Emitter Voltage V
CE
(V)
Collector Current vs.
Collector-Emitter Voltage
0 2 4 6
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
I
C

(
m
A
)
8 10
80
D
a
r
k

C
u
r
r
e
n
t
I
C
E
O

(
)
Ambient Temperature T
a
(
)
0
0.001
0.01
40
20
0.1
1
80
60 100
Dark Current vs.
Ambient Temperature
Collector Power Dissipation vs.
Ambient Temperature
C
o
l
l
e
c
t
o
r

P
o
w
e
r

D
i
s
s
i
p
a
t
i
o
n
P
C

(
m
W
)
-20
0
50
100
150
200
250
Ambient Temperature T
a
(
)
20
0 60
40 100
80
10
20
30
40
Output
Input
Test Circuit
V
IN
R
R
L
V
O
V
CC
Waveform
10%
90%
Switching Time Test Circuit
tr
tf
T
a
=25
I
F
=30mA
I
F
=20mA
I
F
=10mA
I
F
=5mA
I
F
=1mA
V
CE
=10V
I
F
=20mA
Collector Current vs.
Ambient Temperature
I
F
=1mA
Ambient Temperature T
a
(
)
-20
0
0 40
20 60
100
10
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
I
C

(
m
A
)
1
I
F
=5mA
I
F
=10mA
80
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
I
C

(
m
A
)
Forward Current I
F
(mA)
Forward Current I
F
(mA)
0.1
0.001
0.01
1 10 100
Collector Current vs.
Forward Current
T
a
=25
V
CE
=10V
1
0.1
10
100
1
R
e
s
p
o
n
s
e

T
i
m
e
t
r
,

t
f

(
s
)
0.1
Load Resistance R
L
(
)
0.1 1.0 5.0
V
CE
=10V
I
C
=2mA
T
a
=25
500
10
100
Response Time vs.
Load Resistance
tr
tf
T
a
=-55
Forward Voltage V
F
(V)
0.4
F
o
r
w
a
r
d

C
u
r
r
e
n
t
I
F

(
m
A
)
20
0
60
40
100
80
0.8 1.2
T
a
=25
T
a
=70
Forward Current vs.
Forward Voltage
1.6