Infrared Emitting Diodes(GaAs)
DIMENSIONS
(Unit : mm)
The KEL-3001A is GaAs infrared emitting diode that is designed
for high power, low forward voltage and high speed rise / fall time.
This device is optimized for speed and efficiency at emission
wavelength 940nm and has a high radient efficiency over a wide
range of forward current.
FEATURES
940nm wavelength
Low forward voltage
High power and high reliability
Available for pulse operating
APPLICATIONS
IR Audio and Telephone
Communication
Optical Switch
Available for wireless digital data transmission
ABSOLUTE MAXIMUM RATINGS
(Ta=25C)
Symbol
Unit
P
D
mW
I
F
mA
I
FP
A
V
R
V
Topr.
C
Tstg.
C
Tsol.
C
*1. Duty ratio=1/100, pulse width=0.1ms
*2. Lead Soldering Temperature (3mm from case for 5sec).
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
V
F
-
1.4
1.7
V
I
R
-
-
10
uA
Ct
-
70
-
pF
Po
5.0
8.0
-
mW
p
-
940
-
nm
-
45
-
nm
-
20
-
deg.
KEL-3001A
I
F
=50mA
I
F
=50mA
Spectral bandwidth 50%
Half angle
240
Soldering temp. *2
Item
Conditions
Reverse current
Capacitance
V
R
=5V
f=1MHz, V=0V
Radiant intensity
I
F
=50mA
50
0.5
Forward current
Pulse forward current *1
-30 ~ +85
Storage temp.
Forward voltage
I
F
=50mA
Item
Ratings
Peak emission wavelength
I
F
=50mA
Reverse voltage
Operating temp.
5
-25 ~ +85
75
Power dissipation
Infrared Emitting Diodes(GaAs)
KEL-3001A
Power dissipation Vs.
Ambient temperature
0
25
50
75
100
125
0
25
50
75
100
Ambient temperature Ta [C]
Power dissipation P
D
[mW]
Radiant intensity Vs.
Forward current
1
10
100
1000
1
10
100
1000
10000
Forward current I
F
[mA]
Radiant intensity Po [mW]
Relative radiant intensity Vs.
Ambient temperature
0.01
0.1
1
10
100
-20
0
20
40
60
80
100
Ambient temperature Ta [C]
Relative radiant intensity Po
Relative intensity Vs.
Wavelength
0
20
40
60
80
100
120
400
500
600
700
800
900
1000 1100
Wavelength
[nm]
Relative intensity [%]
Forward current Vs.
Forward voltage
0
25
50
75
100
125
0
0.5
1
1.5
2
2.5
Forward voltage V
F
[V]
Forward current I
F
[mA]
Relative radiant intensity Vs.
Distance
0.1
1
10
100
1000
0.1
1
10
100
1000
Distance l [mA]
Relative radiant intensity Po [%]
Relative radiant intensity Vs.
Distance test method
Ta=25C
Ta=25C
Ta=25C
Ta=25C
Ta=25C
Radiant Pattern
Angle (deg.)
Relative intensity (%)
I
F
=50mA
Detector
l
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