Infrared Emitting Diodes(GaAIAs)
1. Description
The IRED have a with angular response and relatively low-cost compared to can type devices.
2. Features
Wide angular response
Peak emission wavelength ?p=850nm
Relativery low-cost againstmetal can package
Low profile package
3. Applications
Transportation sensors
Security switches
4. Package Outline
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KKC-QM-043-2
KFL-1ML-N
The KFL-1ML-N is a high-power GaAlAs IRED mounted in TO-46K type header with clear epoxy encapsulation.
ALL DIMENSIONS IN MILLIMETERS
Infrared Emitting Diodes(GaAIAs)
5. Absolute Maximum Ratings
[T
A
= 25
]
Notes : 1. Pulse Width : tw=100
sec. Period : T=10 msec.
2. For MAX. 5 seconds at the position of 2 mm from the resin edge.
6. Electro-optical Characteristics
[T
A
= 25
]
7. Inspection Criteria
7-1. In electrical and optical characteristics, all products are inspected for following
3 items.
Reverse Voltage : BV
R
Forward Voltage : V
F
Radiant Intensity : P
O
7-2. No particular inspections shall be carried out for items other than those above. However
they shall satisfy the ratings.
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KKC-QM-043-2
KFL-1ML-N
Parameter
Reverse Voltage
Forward Current
Pulse Forward Current (see Note 1)
Power Dissipation
Operating Temperature
deg.
63
14
Symbol
Ratings
5
80
V
R
I
F
A
140
Typ
mW
Min
P
D
Topr.
Unit
V
10
V
Unit
1.7
1
Tsol.
I
FP
Storage Temperature
Tstg.
-30 ~ +100
-25 ~ +80
260
I
F
= 50 mA
Peak Emission Wavelength
Soldering Temperature (see Note 2)
Item
Spectral Bandwidth
I
R
Forward Voltage
Reverse Current
V
R
= 5 V
Max
1.5
30
850
V
F
Conditions
I
F
= 50 mA
Half Angle
p
P
O
I
F
= 50 mA
I
F
= 50 mA
Radiant Intensity
25
pF
Capacitance
Ct
f=1MHz
Symbol
Infrared Emitting Diodes(GaAIAs)
8. Typical Electrical-optical Characteristics Curves
Power dissipation Vs.
Radiant intensity Vs.
Ambient temperature
Forward current
Ambient temperature
Relative intensity
Vs.
Forward current Vs.
Radiant Pattern
Wavelength
Forward voltage
Relative radiant intensity
Vs.
Distance
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KKC-QM-043-2
KFL-1ML-N
Relative radiant intensity Vs
.
1
10
100
(
)
Distance()
Radiant intensity(P )
10
()
O
Forward current(I )
10
10
10
0
1
2
3
10
-2
-1
10
10
0
1
10
()
F
Ta=25
Relative radiant intensity(P )
40
Ambient temperature(Ta)
0
-20
20
0.1
1
()
80
60
100
O
10
Ta=25
Forward current(I )
Forward voltage(V )
0
0
0.5
50
1.5
1.0
2.0
F
()
F
100
(V)
Relative radiant intensity(P )
1
100
10
(%)
O
Ta=25
Relative Sensitivity(%)
Angle(deg.)
-20
100
+100
+80
+40
50
+60
0
50
+20
0
100
-40
-60
50
-80
-100
Ta=25
Collector power dissipation Pc
0
0
80
Ambient temperature Ta
30
60
120
90
()
160
()
120
40
200
150
80
Relative intensity S
500
20
400
0
40
60
700
Wavelength()
600
800 900
()
1000 1100
Ta=25
100
(%)
Infrared Emitting Diodes(GaAIAs)
9. Cautions in Usage
9-1. Store and use where there is no exterior force that will cause change in shape.
9-2. Store and use where there is no Hydrogen Sulfide gas, or any other corrosive gas.
9-3. The bending or cutting of the lead should be done at room temperature, no force being
applied on the package.
9-4. Solder the lead pin under conditions of the absolute maximum rating chart, and do not
apply force on the lead pin after soldering.
10. Guarantee Period and Scope
10-1. Period
One year after delivery to the desired place.
10-2. Scope
Replacement of products will be done, if any problems lie in our company's products.
However, we are not liable for your damage by lack of caution.
11. Others
Any doubts concerning this specfication should be discussed fully by both parties.
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KKC-QM-043-2
KFL-1ML-N
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