DIM800DCM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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FEATURES
I
10
s Short Circuit Withstand
I
High Thermal Cycling Capability
I
Non Punch Through Silicon
I
Isolated MMC Base with AlN Substrates
APPLICATIONS
I
Inverters
I
Motor Controllers
I
Traction Drives
The Powerline range of modules includes half bridge, dual,
chopper, bi-directional and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM800DCM12-A000 is a 1200V, n channel
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10
s short circuit withstand.
This module is optimised for applications requiring high thermal
cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800DCM12-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
1200V
V
CE(sat)
*
(typ)
2.2V
I
C
(max)
800A
I
C(PK)
(max)
1600A
*(measured at the power busbars and not the auxiliary terminals)
DIM800DCM12-A000
IGBT Chopper Module
Replaces July 2002 version DS5548-2.0
DS5548-
Fig. 1 Chopper circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: D
(See package details for further information)
3(C1)
5(E
1
)
6(G
1
)
7(C
1
)
1(E1)
4(E2)
2(C2)
DIM800DCM12-A000
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
V
GE
= 0V
-
T
case
= 85C
1ms, T
case
= 115C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1800V, V
2
= 1300V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Units
V
V
A
A
W
kA
2
s
kA
2
s
V
PC
Max.
1200
20
800
1600
6940
100
225
2500
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value (IGBT arm)
Diode I
2
t value (Diode arm)
Isolation voltage - per module
Partial discharge - per module
DIM800DCM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (IGBT arm)
Thermal resistance - diode (Diode arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
20mm
Clearance:
10mm
CTI (Critical Tracking Index): 175
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
18
40
26.7
8
150
125
125
5
2
10
Typ.
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
-
40
-
-
-
DIM800DCM12-A000
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 40mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 800A
V
GE
= 15V, I
C
= 800A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 800A
I
F
= 800A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 900V,
I
1
t
p
10
s, V
CE(max)
= V
CES
L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
Input capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. I
SC
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
R
INT
SC
Data
Units
mA
mA
A
V
V
V
A
A
V
V
V
V
nF
nH
m
A
A
Max.
1
25
4
6.5
2.8
3.2
800
1600
2.4
2.1
2.4
2.0
-
-
-
-
-
Typ.
-
-
-
5.5
2.2
2.6
-
-
2.1
1.8
2.1
1.7
90
20
0.27
5500
4500
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
Note:
Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + L
M
DIM800DCM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1250
170
130
250
250
80
9
80
380
30
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 2.7
L ~ 100nH
I
F
= 800A, V
R
= 600V,
dI
F
/dt = 4200A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1500
200
160
400
220
120
160
450
60
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 2.7
L ~ 100nH
I
F
= 800A, V
R
= 600V,
dI
F
/dt = 4000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
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