FEATURES
Improved Replacement for SILICONIX, FAIRCHILD, &
NATIONAL: 2N5911 & 2N5912
LOW NOISE (10kHz)
e
n
~ 4nV/Hz
HIGH TRANSCONDUCTANCE (100MHz)
g
fs
4000S
ABSOLUTE MAXIMUM RATINGS
1
@ 25 C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 C
Operating Junction Temperature
-55 to +150 C
Maximum Power Dissipation
Continuous Power Dissipation (Total)
500mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-25V
Gate to Source
-25V
MATCHING ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
LS5911
LS5912
LS5912C
SYMBOL
CHARACTERISTIC
TYP
MIN MAX
MIN MAX
MIN MAX
UNIT CONDITIONS
GS2
GS1
V
V
-
Differential Gate to Source
Cutoff Voltage
10 15 40
mV
V
DG
= 10V, I
D
= 5mA
T
V
V
GS2
GS1
-
Differential Gate to Source
Cutoff Voltage Change with
Temperature
20 40 40
V/C
V
DG
= 10V, I
D
= 5mA
T
A
= -55 to +125C
DSS2
DSS1
I
I
Gate to Source Saturation
Current Ratio
0.95 1 0.95 1 0.95 1 % V
DS
= 10V, V
GS
= 0V
G2
G1
I
I
-
Differential
Gate
Current
20 20 20
nA
V
DG
= 10V, I
D
= 5mA
T
A
= +125C
fs2
fs1
g
g
Forward Transconductance
Ratio
2
0.95 1 0.95 1 0.95 1 %
V
DS
= 10V, I
D
= 5mA
f
= 1kHz
CMRR
Common Mode Rejection
Ratio
85
dB
V
DG
= 5V to 10V
I
D
= 5mA
1
2
3
4
8
7
6
5
PDIP-B
S1
D1
G1
NC
NC
G2
D2
S2
1
2
3
4
8
7
6
5
SOIC-B
S1
D1
G1
NC
NC
G2
D2
S2
1
2
3
4
8
7
6
5
PDIP-A
S1
D1
SS
G1
G2
SS
D2
S2
1
2
3
4
8
7
6
5
SOIC-A
S1
D1
SS
G1
G2
SS
D2
S2
5
BOTTOM VIEW
TO-78
1
2
3
6
7
D1
G1
S1
S2
D2
G2
1
3
2
SOT-23
TOP VIEW
6
4
5
S2
D2
G2
G1
D1
S1
5
BOTTOM VIEW
TO-71
1
2
3
6
7
D1
G1
S1
S2
D2
G2
Linear Integrated Systems
LS5911 LS5912 LS5912C
IMPROVED LOW NOISE
WIDEBAND MONOLITHIC
DUAL N-CHANNEL JFET
STATIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
LS5911
LS5912
LS5912C
SYM.
CHARACTERISTIC
TYP
MIN MAX
MIN MAX
MIN MAX
UNIT CONDITIONS
BV
GSS
Gate
to
Source
Breakdown
Voltage
-25 -25 -25
I
G
= -1A, V
DS
= 0V
V
GS(off)
Gate to Source Cutoff Voltage
-1 -5 -1 -5 -1 -5
V
DS
= 10V, I
D
= 1nA
V
GS(F)
Gate
to
Source
Forward
Voltage
0.7
I
G
= 1mA, V
DS
= 0V
V
GS
Gate to Source Voltage
-0.3 -4 -0.3 -4 -0.3 -4
V
V
DG
= 10V, I
G
= 5mA
I
DSS
Drain to Source Saturation Current
3
7 40 7 40 7 40 mA
V
DS
= 10V, V
GS
= 0V
I
GSS
Gate
Leakage
Current
-1 -50 -50 -50
V
GS
= -15V, V
DS
= 0V
I
G
Gate
Operating
Current
-1 -50 -50 -50
pA
V
DG
= 10V, I
D
= 5mA
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
DYNAMIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated)
LS5911
LS5912
LS5912C
SYM.
CHARACTERISTIC
TYP
MIN MAX
MIN MAX
MIN MAX
UNIT CONDITIONS
f
= 1kHz
4000 10000 4000 10000 4000 10000
g
fs
Forward
Transconductance
f
= 100MHz
4000 10000 4000 10000 4000 10000
f
=
1kHz 100 100 100
g
os
Output
Conductance
f
=
100MHz 150 150 150
S V
DG
= 10V, I
D
= 5mA
C
iss
Input
Capacitance
5 5 5
C
rss
Reverse
Transfer
Capacitance
1.2 1.2 1.2
pF
V
DG
= 10V, I
D
= 5mA
f
= 1MHz
NF
Noise
Figure
1 1 1
dB
V
DG
= 10V, I
D
= 5mA
f
= 10kHz, R
G
= 100K
f
=
100Hz 7 20 20 20
nV/Hz
V
DG
= 10V, I
D
= 5mA
f
= 100Hz
e
n
Equivalent Input
Noise Voltage
f
=
10kHz 4 10 10 10
nV/Hz
V
DG
= 10V, I
D
= 5mA
f
= 10kHz
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
2.
Pulse Test: PW 300s Duty Cycle 3%
3.
Assumes smaller value in numerator.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio
otherwise under any patent or patent rights of Linear Integrated Systems.
n or
1
2
3
4
8
7
6
5
SOIC-B
S1
D1
G1
NC
NC
G2
D2
S2
1
2
3
4
8
7
6
5
PDIP-B
S1
D1
G1
NC
NC
G2
D2
S2
Please contact the factory
regarding the availability of
optional packages.
TO-78
0.335
0.370
0.305
0.335
0.016
0.019
0.165
0.185
0.040
MAX.
DIM. A
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45
1
2 3
5
6
7
0.029
0.045
SEATING
PLANE
1
3
5
SOT-23
DIMENSIONS IN
MILLIMETERS
2
4
6
0.95
1.90
1.50
1.75
2.60
3.00
0.35
0.50
2.80
3.00
0.90
1.30
0.00
0.15
0.09
0.20
0.10
0.60
1
2
3
4
8
7
6
5
PDIP-A
S1
D1
SS
G1
G2
SS
D2
S2
1
2
3
4
8
7
6
5
SOIC-A
S1
D1
SS
G1
G2
SS
D2
S2
TO-71
Six Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
3
2
1
5
6
0.046
0.036
45
0.048
0.028
0.100
0.050
7
1
SOIC
2
3
4
5
6
7
8
DIMENSIONS IN
INCHES
0.2284
0.2440
0.189
0.196
0.0075
0.0098
0.021
0.014
0.018
0.050
0.0040
0.0098
0.150
0.157
1
PDIP
DIMENSIONS IN
INCHES
2
3
4
5
6
7
8
0.145
0.170
0.060
0.100
0.250
0.375
0.038
0.295
0.320
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