Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
1 7
3
5
BOTTOM VIEW
2
6
31 X 32 MILS
D1
G1
S2
S1
G2
D2
FEATURES
LOW NOISE
e
n
= 8nV/
Hz TYP.
LOW LEAKAGE
I
G
= 10pA TYP.
LOW DRIFT
|
V
GS1-2
/
T|= 5
V/
C max.
LOW OFFSET VOLTAGE
IV
GS1-2
I= 2mV TYP.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-65
to +150
C
Operating Junction Temperature
+150
C
Maximum Voltage and Current for Each Transistor NOTE 1
-V
GSS
Gate Voltage to Drain or Source
60V
-V
DSO
Drain to Source Voltage
60V
-I
G(f)
Gate Forward Current
50mA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
400mW @ +125
C
G1
S2
S1
G2
D1
D2
ELECTRICAL CHARACTERISTICS @ 25
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS840 LS841 LS842 UNITS CONDITIONS
|
V
GS1-2
/
T| max. Drift vs. Temperature
5
10
40
V/
C
V
DG
= 20V
I
D
= 200
A
T
A
= -55
C to +125
C
|V
GS1-2
| max.
Offset Voltage
5
10
25
mV
V
DG
= 20V
I
D
= 200
A
LS840 LS841 LS842
LOW NOISE LOW DRIFT
LOW CAPACITANCE
MONOLITHIC DUAL
N-CHANNEL JFET
SYMBOL
CHARACTERISTICS
MIN. TYP. MAX. UNITS CONDITIONS
BV
GSS
Breakdown Voltage
60
--
--
V
V
DS
= 0
I
D
= 1nA
BV
GGO
Gate-to-Gate Breakdown
60
--
--
V
I
G
= 1nA
I
D
= 0
I
S
= 0
TRANSCONDUCTANCE
Y
fss
Full Conduction
1000
4000
mho
V
DG
= 20V
V
GS
= 0
f= 1kHz
Y
fs
Typical Conduction
500
1000
mho
V
DG
= 20V
I
D
= 200
A
|Y
fs1-2
/Y
fs
|
Mismatch
--
0.6
3
%
DRAIN CURRENT
I
DSS
Full Conduction
0.5
2
5
mA
V
DG
= 20V
V
GS
= 0
|I
DSS1-2
/I
DSS
|
Mismatch at Full Conduction
--
1
5
%
GATE VOLTAGE
V
GS
(off) or V
P
Pinchoff Voltage
1
2
4.5
V
V
DS
= 20V
I
D
= 1nA
V
GS
Operating Range
0.5
--
4
V
V
DS
= 20V
I
D
= 200
A
GATE CURRENT
-I
G
Operating
--
10
50
pA
V
DG
= 20V
I
D
= 200
A
-I
G
High Temperature
--
--
50
nA
V
DG
= 20V
I
D
= 200
A
T
A
= +125
C
-I
G
Reduced VDG
--
5
--
pA
V
DG
= 10V
I
D
= 200
A
-I
GSS
At Full Conduction
--
--
100
pA
V
DG
= 20V
V
DS
= 0
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
TO-71
Six Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
3
2
1
8
4
5
6
0.046
0.036
45
0.048
0.028
0.100
0.050
7
TO-78
0.335
0.370
0.305
0.335
0.016
0.019
0.165
0.185
0.040
MAX.
DIM. A
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45
1
2 3 4
5
6
7
8
0.029
0.045
SEATING
PLANE
S1 1
2
3
4
5
6
7
8
D1
SS
G1
S2
G2
SS
D2
P-DIP
S1 1
2
3
4
5
6
7
8
D1
SS
G1
S2
G2
SS
D2
0.150
0.158
(3.81)
(4.01)
0.188
0.197
0.228
0.244
(5.79)
(6.20)
SOIC
0.320
0.290
(8.13)
(7.37)
0.405
MAX.
(10.29)
(4.78)
(5.00)
SYMBOL
CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS
OUTPUT CONDUCTANCE
Y
OSS
Full Conduction
--
--
10
mho
V
DG
= 20V
V
GS
= 0
Y
OS
Operating
--
0.1
1
mho
V
DG
= 20V
I
D
= 200
A
|Y
OS1-2
|
Differential
--
0.01
0.1
mho
COMMON MODE REJECTION
CMR
-20 log |
V
GS1-2
/
V
DS
|
--
100
--
dB
V
DS
= 10 to 20V
I
D
= 200
A
CMR
--
75
--
dB
V
DS
= 5 to 10V
I
D
= 200
A
NOISE
NF
Figure
--
--
0.5
dB
V
DS
= 20V
V
GS
= 0
R
G
= 10M
f= 100Hz
NBW= 6Hz
e
n
Voltage
--
--
10
nV/
Hz
V
DS
= 20V
I
D
= 200
A f= 1KHz
NBW= 1Hz
e
n
Voltage
--
--
15
nV/
Hz
V
DS
= 20V
I
D
= 200
A f= 10Hz
NBW= 1Hz
CAPACITANCE
C
ISS
Input
--
4
10
pF
V
DS
= 20V
I
D
= 200
A
C
RSS
Reverse Transfer
--
1.2
5
pF
C
DD
Drain-to-Drain
--
0.1
--
pF
V
DG
= 20V
I
D
= 200
A
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