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Электронный компонент: LT1004CS8-1.2

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LT1004
Micropower Voltage
Reference
s
Guaranteed
4mV Initial Accuracy LT1004-1.2
s
Guaranteed
20mV Accuracy LT1004-2.5
s
Guaranteed 10
A Operating Current
s
Guaranteed Temperature Performance
s
Operates up to 20mA
s
Very Low Dynamic Impedance
The LT
1004 Micropower Voltage Reference is a
2-terminal bandgap reference diode designed to provide
high accuracy and excellent temperature characteristics at
very low operating currents. Optimization of the key
parameters in the design, processing and testing of the
device results in accuracy specifications previously attain-
able only with selected units. Below is a distribution plot of
reference voltage for a typical lot of LT1004-1.2. Virtually
all of the units fall well within the prescribed limits of
4mV.
The LT1004 is a pin-for-pin replacement for the
LM185/LM385 series of references with improved accu-
racy specifications. More important, the LT1004 is an
attractive device for use in systems where accuracy was
previously obtained at the expense of power consump-
tion and trimming.
For a low drift micropower reference with guaranteed
temperature coefficient, see the LT1034 data sheet.
FEATURES
DESCRIPTIO
N
U
1.2325
1.233
1.2335
1.234
1.2345
1.235
1.2355
1.236
1.2365
1.237
1.2375
NUMBER OF PARTS
200
180
160
140
120
100
80
60
40
20
1004 TA02
1200 PARTS
T
A
= 25
C
, LTC and LT are registered trademarks of Linear Technology Corporation.
Typical Distribution of
Reference Voltage (LT1004-1.2)
TYPICAL APPLICATIO
N
U
Micropower Cold Junction Compensation for Thermocouples
R1
100k
186
3V
LITHIUM
1.8k
1004 TA01
*
5k AT
25
C
LT1004-1.2
1684
THERMOCOUPLE
TYPE
R
1
J
233k
K
299k
T
300k
S
2.1M
* QUIESCENT CURRENT
15
A
YELLOW SPRINGS INST. CO.
PART #44007
COMPENSATES WITHIN
1
C FROM 0
C TO 60
C
+
+
s
Portable Meter References
s
Portable Test Instruments
s
Battery-Operated Systems
s
Current Loop Instrumentation
APPLICATIO
N
S
U
2
LT1004
ABSOLUTE
M
AXI
M
U
M
RATINGS
W
W
W
U
PACKAGE/ORDER I
N
FOR
M
ATIO
N
W
U
U
S8 PART MARKING
(Note 1)
ORDER PART
NUMBER
LT1004MH-1.2
LT1004MH-2.5
LT1004CH-1.2
LT1004CH-2.5
Reverse Breakdown Current ................................. 30mA
Forward Current................................................... 10mA
Operating Temperature Range
LT1004M ......................................... 55
C to 125
C
LT1004I ............................................. 40
C to 85
C
LT1004C ................................................. 0
C to 70
C
Storage Temperature Range ................ 65
C to 150
C
Lead Temperature (Soldering, 10 sec.)................ 300
C
T
JMAX
= 150
C
JA
= 440
C/ W
JC
= 80
C/ W
T
JMAX
= 100
C
JA
= 160
C/ W
LT1004CZ-1.2
LT1004CZ-2.5
LT1004IZ-1.2
LT1004IZ-2.5
T
JMAX
= 100
C,
JA
= 150
C/ W
0412
0412I
0425
0425I
LT1004CS8-1.2
LT1004CS8-2.5
LT1004IS8-1.2
LT1004IS8-2.5
BOTTOM VIEW
1
2
H PACKAGE
2-LEAD TO-46 METAL CAN
BOTTOM VIEW
Z PACKAGE
3-LEAD PLASTIC TO-92
1
2
3
1
2
3
4
8
7
6
5
TOP VIEW
S8 PACKAGE
8-LEAD PLASTIC SO
NC
NC
NC
GND
V
OUT
NC
V
OUT
NC (DO NOT USE)
ELECTRICAL CHARACTERISTICS
(Note 2)
LT1004-1.2
LT1004-2.5
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
V
Z
Reverse Breakdown Voltage
I
R
= 100
A
1.231
1.235
1.239
2.480
2.500
2.520
V
LT1004M: 55
C
T
A
125
C
q
1.220
1.230
1.245
2.460
2.500
2.535
V
LT1004C: 0
C
T
A
70
C
q
1.225
1.235
1.245
2.470
2.500
2.530
V
LT1004I: 40
C
T
A
85
C
q
1.220
1.230
1.245
2.460
2.500
2.530
V
V
Z
Average Temperature Coefficient
I
MIN
I
R
20mA (Note 3)
50
50
ppm/
C
Temp
I
MIN
Minimum Operating Current
q
8
10
12
20
A
V
Z
Reverse Breakdown Voltage
I
MIN
I
R
1mA
1.0
1.0
mV
I
R
Change with Current
q
1.5
1.5
mV
1mA
I
R
20mA
10
10
mV
q
20
20
mV
r
Z
Reverse Dynamic Impedance
I
R
= 100
A
0.2
0.6
0.2
0.6
q
1.5
1.5
e
n
Wide Band Noise (RMS)
I
R
= 100
A
10Hz
f
10kHz
60
120
V
V
Z
Long Term Stability
I
R
= 100
A
Time
T
A
= 25
C
0.1
C
20
20
ppm/kHr
The
q
denotes the specifications which apply over the full operating
temperature range.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: All specifications are for T
A
= 25
C unless otherwise noted.
Note 3: Selected devices with guaranteed maximum temperature
coefficient are available upon request.
For MIL-STD components, please refer to LTC 883C data sheet for test
listing and parameters.
3
LT1004
FORWARD CURRENT (mA)
FORWARD VOLTAGE (V)
1.2
0.8
0.4
0
0.01
1
10
100
1004 G11
0.1
T
A
= 25
C
Forward Characteristics
Reverse Voltage Change
REVERSE CURRENT (mA)
OUTPUT VOLTAGE CHANGE (mV)
16
12
8
4
0
4
0.01
1
10
100
1004 G02
0.1
55
C TO 125
C
Reverse Dynamic Impedance
REVERSE CURRENT (mA)
DYNAMIC IMPEDANCE (
)
100
10
1
0.1
0.01
1
10
100
1004 G05
0.1
55
C TO 125
C
f = 25Hz
FREQUENCY (Hz)
10
DYNAMIC IMPEDANCE (
)
10k
1k
100
10
1
0.1
100k
1004 G06
100
1k
10k
1M
T
A
= 25
C
I
R
= 100
A
Reverse Dynamic Impedance
Temperature Drift
Reverse Characteristics
REVERSE VOLTAGE (V)
0
REVERSE CURRENT (
A)
100
10
1
0.1
0.4
0.8
1.0
1004 G01
0.2
0.6
1.2
1.4
55
C TO 125
C
Filtered Output Noise
Noise Voltage
FREQUENCY (Hz)
700
600
500
400
300
200
100
0
10
1k
10k
100k
1004 G07
100
NOISE (nV/
Hz)
I
R
= 100
A
T
A
= 25
C
FREQUENCY (Hz)
100
70
60
50
40
30
20
10
0
1k
10k
100k
1004 G08
I
R
= 100
A
NOISE (nV/
Hz)
R
C
100
A
RC LOW PASS
Reponse Time
TYPICAL PERFOR
M
A
N
CE CHARACTERISTICS
U
W
(1.2V)
TEMPERATURE (
C)
55
REVERSE VOLTAGE (V)
45
1.245
1.240
1.235
1.230
1.225
1004 G04
35
125
15
5
25
65
85 105
TIME (
s)
0
VOLTAGE (V)
500
100
600
1004 G09
1.5
1.0
0.5
0
5V
0
36k
V
IN
V
OUT
OUTPUT
INPUT
4
LT1004
Reverse Dynamic Impedance
Reverse Dynamic Impedance
Temperature Drift
Filtered Output Noise
Noise Voltage
Reponse Time
(2.5V)
FORWARD CURRENT (mA)
FORWARD VOLTAGE (V)
1.2
0.8
0.4
0
0.01
1
10
100
1004 G11
0.1
T
A
= 25
C
Forward Characteristics
TEMPERATURE (
C)
55
REFERENCE VOLTAGE (V)
45
2.515
2.510
2.505
2.500
2.495
2.490
2.485
2.480
1004 G12
35
125
15
5
25
65
85 105
REVERSE CURRENT (mA)
DYNAMIC IMPEDANCE (
)
1000
100
10
1
0.1
0.01
1
10
100
1004 G13
0.1
f = 25Hz
55
C TO 125
C
FREQUENCY (Hz)
10
DYNAMIC IMPEDANCE (
)
10k
1k
100
10
1
0.1
100k
1004 G14
100
1k
10k
1M
T
A
= 25
C
I
R
= 100
A
FREQUENCY (Hz)
1400
1200
1000
800
600
400
200
0
10
1k
10k
100k
1004 G15
100
NOISE (nV/
Hz)
I
R
= 100
A
CUTOFF FREQUENCY (Hz)
100
120
100
80
60
40
20
0
1k
10k
100k
1004 G16
I
R
= 100
A
INTEGRATED NOISE (
V)
R
C
100
A
RC LOW PASS
REVERSE VOLTAGE (V)
0
REVERSE CURRENT (
A)
100
10
1
0.1
0.5
1.0
1.5
2.0
1004 G10
2.5
3.0
55
C TO 125
C
Reverse Characteristics
TYPICAL PERFOR
M
A
N
CE CHARACTERISTICS
U
W
TIME (
s)
VOLTAGE (V)
500
100
1004 G17
3
2
1
0
5V
0
24k
V
IN
V
OUT
OUTPUT
INPUT
5
LT1004
TYPICAL APPLICATIO
N
S
U
Micropower 5V Reference
V
IN
8V
1
F
OUT
IN
5V
1004 TA03
LT1004-2.5
300
1%
100
1%
LT1338A
ADJ
+
High Stability 5V Regulator
V
IN
1
F
V
OUT
V
OUT
V
IN
V
1004 TA08
LT1004-1.2
120
R1
LT338A
ADJ
+
10
F
2k
+
R1
V
1V
0.015
Variable Output Supply
Constant Gain Amplifier
Over Temperature
200k
250k
V
5V
V
+
5V
INPUT
OUTPUT
1004 TA07
60k
2N3904
250k
LT1004-1.2
Lead Acid Low Battery Detector
+
LM4250
2
3
4
7
8
6
10M
12V
LO = BATTERY LOW
1004 TA14
LT
1004-1.2
133k
1%
R1
1%
R1
SETS TRIP POINT, 60.4k
PER CELL FOR 1.8V/CELL
1M
BATTERY
OUTPUT
Ground Referenced Current Source
+
LT1007C
2
3
6
7
4
R
2k*
15V
5V
I
OUT
LT1004-1.2
1004 TA04
* MAY BE INCREASED
FOR SMALL OUTPUT CURRENTS
I
OUT
=
1.235
R
R
2V
I
OUT
+ 10
A
1M
1%
3.01M
1%
+
LM4250
2
3
4
8
6
7
22M
V
IN
9V to 15V
V
OUT
5V
1004 TA13
LT1004-1.2
5.6k
R
LM334
150pF