LT1158
1
Half Bridge N-Channel
Power MOSFET Driver
s
Drives Gate of Top Side MOSFET Above V
+
s
Operates at Supply Voltages from 5V to 30V
s
150ns Transition Times Driving 3000pF
s
Over 500mA Peak Driver Current
s
Adaptive Non-Overlap Gate Drives
s
Continuous Current Limit Protection
s
Auto Shutdown and Retry Capability
s
Internal Charge Pump for DC Operation
s
Built-In Gate Voltage Protection
s
Compatible with Current-Sensing MOSFETs
s
TTL/CMOS Input Levels
s
Fault Output Indication
A single input pin on the LT1158 synchronously controls
two N-channel power MOSFETs in a totem pole configura-
tion. Unique adaptive protection against shoot-through
currents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
A continuous current limit loop in the LT1158 regulates
short-circuit current in the top power MOSFET. Higher
start-up currents are allowed as long as the MOSFET V
DS
does not exceed 1.2V. By returning the fault output to the
enable input, the LT1158 will automatically shut down in
the event of a fault and retry when an internal pull-up
current has recharged the enable capacitor.
An on-chip charge pump is switched in when needed to
turn on the top N-channel MOSFET continuously. Special
circuitry ensures that the top side gate drive is safely
maintained in the transition between PWM and DC opera-
tion. The gate-to-source voltages are internally limited to
14.5V when operating at higher supply voltages.
FEATURES
DESCRIPTIO
N
U
Top and Bottom Gate Waveforms
+
+
+
R
SENSE
0.015
500
F
LOW
ESR
0.1
F
IRFZ34
IRFZ34
24V
1N4148
10
F
1
F
0.01
F
PWM
0Hz TO
100kHz
BOOST
BOOST DR
T GATE DR
T GATE FB
T SOURCE
SENSE
+
SENSE
B GATE DR
B GATE FB
GND
V
+
V
+
INPUT
ENABLE
FAULT
BIAS
LT1158
+
LOAD
LT1158 TA01
TYPICAL APPLICATIO
N
U
V
IN
= 24V
R
L
= 12
1158 TA02
s
PWM of High Current Inductive Loads
s
Half Bridge and Full Bridge Motor Control
s
Synchronous Step-Down Switching Regulators
s
Three-Phase Brushless Motor Drive
s
High Current Transducer Drivers
s
Battery-Operated Logic-Level MOSFETs
APPLICATIO
N
S
U
LT1158
2
ORDER PART
NUMBER
LT1158CN
LT1158IN
LT1158CS
LT1158IS
JA
= 70
C/W
JA
= 110
C/W
TOP VIEW
S PACKAGE
16-LEAD PLASTIC SOL
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
BOOST DR
V
+
BIAS
ENABLE
FAULT
INPUT
GND
B GATE FB
BOOST
T GATE DR
T GATE FB
T SOURCE
SENSE
+
SENSE
V
+
B GATE DR
1
2
3
4
5
6
7
8
TOP VIEW
N PACKAGE
16-LEAD PLASTIC DIP
16
15
14
13
12
11
10
9
BOOST DR
V
+
BIAS
ENABLE
FAULT
INPUT
GND
B GATE FB
BOOST
T GATE DR
T GATE FB
T SOURCE
SENSE
+
SENSE
V
+
B GATE DR
LT1158I
LT1158C
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP MAX
MIN
TYP
MAX
UNITS
I
2
+ I
10
DC Supply Current (Note 2)
V
+
= 30V, V16 = 15V, V4 = 0.5V
2.2
3
2.2
3
mA
V
+
= 30V, V16 = 15V, V6 = 0.8V
4.5
7
10
4.5
7
10
mA
V
+
= 30V, V16 = 15V, V6 = 2V
8
13
18
8
13
18
mA
I
16
Boost Current
V
+
= V13 = 30V, V16 = 45V, V6 = 0.8V
3
4.5
3
4.5
mA
V6
Input Threshold
q
0.8
1.4
2
0.8
1.4
2
V
I
6
Input Current
V6 = 5V
q
5
15
5
15
A
V4
Enable Low Threshold
V6 = 0.8V, Monitor V9
q
0.9
1.15
1.4
0.85
1.15
1.4
V
V4
Enable Hysteresis
V6 = 0.8V, Monitor V9
q
1.3
1.5
1.7
1.2
1.5
1.8
V
I
4
Enable Pullup Current
V4 = 0V
q
15
25
35
15
25
35
A
V15
Charge Pump Voltage
V
+
= 5V, V6 = 2V, Pin 16 open, V13
5V
q
9
11
9
11
V
V
+
= 30V, V6 = 2V, Pin16 open, V13
30V
q
40
43
47
40
43
47
V
V9
Bottom Gate "ON" Voltage
V
+
= V16 = 18V, V6 = 0.8V
q
12
14.5
17
12
14.5
17
V
V1
Boost Drive Voltage
V
+
= V16 = 18V, V6 = 0.8V, 100mA Pulsed Load
q
12
14.5
17
12
14.5
17
V
Consult factory for Military grade parts.
ABSOLUTE
M
AXI
M
U
M
RATINGS
W
W
W
U
Supply Voltage (Pins 2, 10) .................................... 36V
Boost Voltage (Pin 16)............................................ 56V
Continuous Output Currents (Pins 1, 9, 15) ....... 100mA
Sense Voltages (Pins 11, 12)................... 5V to V
+
+5V
Top Source Voltage (Pin 13).................... 5V to V
+
+5V
Boost to Source Voltage (V16 V13) ....... 0.3V to 20V
Operating Temperature Range
LT1158C ................................................ 0
C to 70
C
LT1158I ............................................ 40
C to 85
C
Junction Temperature (Note 1)
LT1158C .......................................................... 125
C
LT1158I ........................................................... 150
C
Storage Temperature Range ................ 65
C to 150
C
Lead Temperature (Soldering, 10 sec.)................ 300
C
PACKAGE/ORDER I
N
FOR
M
ATIO
N
W
U
U
open, Gate Feedback pins connected to Gate Drive pins unless otherwise specified.
ELECTRICAL CHARACTERISTICS
Test Circuit, T
A
= 25
C, V
+
= V16 = 12V, V11 = V12 = V13 = 0V, Pins 1 and 4
LT1158
3
TEMPERATURE (C)
50
8
10
14
25
75
LT
1158 G02
6
4
25
0
50
100
125
2
0
12
SUPPLY CURRENT (mA)
I
2
+ I
10
+ I
16
V
+
= 12V
INPUT HIGH
INPUT LOW
ENABLE LOW
SUPPLY VOLTAGE (V)
0
8
10
12
30
LT1158 G01
6
4
10
20
40
2
0
14
I
2
+ I
10
+ I
16
ENABLE LOW
SUPPLY CURRENT (mA)
5
15
25
35
INPUT LOW
INPUT HIGH
V13 = 0V
V13 = V
+
INPUT FREQUENCY (kHz)
1
0
SUPPLY CURRENT (mA)
5
10
15
20
30
10
100
LT1158 G03
25
50% DUTY CYCLE
C
GATE
= 3000pF
V
+
= 24V
V
+
= 6V
V
+
= 12V
DC Supply Current
DC Supply Current
Dynamic Supply Current (V
+
)
TYPICAL PERFOR
M
A
N
CE CHARACTERISTICS
U
W
Test Circuit, T
A
= 25
C, V
+
= V16 = 12V, V11 = V12 = V13 = 0V, Pins 1 and 4
ELECTRICAL CHARACTERISTICS
The
q
denotes specifications that apply over the full operating temperature
range.
Note 1: T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formulas:
LT1158IN, LT1158CN: T
J
= T
A
+ (P
D
70
C/W)
LT1158IS, LT1158CS: T
J
= T
A
+ (P
D
110
C/W)
Note 2: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency. See typical performance
characteristics and applications information.
Note 3: Gate rise times are measured from 2V to 10V, delay times are
measured from the input transition to when the gate voltage has decreased
to 10V, and fall times are measured from 10V to 2V.
LT1158I
LT1158C
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP MAX
UNITS
V14 V13 Top Turn-Off Threshold
V
+
= V16 = 5V, V6 = 0.8V
1
1.75
2.5
1
1.75
2.5
V
V8
Bottom Turn-Off Threshold
V
+
= V16 = 5V, V6 = 2V
1
1.5
2
1
1.5
2
V
I
5
Fault Output Leakage
V
+
= 30V, V16 = 15V, V6 = 2V
q
0.1
1
0.1
1
A
V5
Fault Output Saturation
V
+
= 30V, V16 = 15V, V6 = 2V, I5 = 10mA
0.5
1
0.5
1
V
V12 V11 Fault Conduction Threshold
V
+
= 30V, V16 = 15V, V6 = 2V, I5 = 100
A
90
110
130
85
110
135
mV
V12 V11 Current Limit Threshold
V
+
= 30V, V16 = 15V, V6 = 2V, Closed Loop
130
150
170
120
150
180
mV
q
120
180
120
180
mV
V12 V11 Current Limit Inhibit
V
+
= V12 = 12V, V6 = 2V, Decrease V11
1.1
1.25
1.4
1.1
1.25
1.4
V
V
DS
Threshold
until V15 goes low
t
R
Top Gate Rise Time
Pin 6 (+) Transition, Meas. V15 V13 (Note 3)
q
130
250
130
250
ns
t
D
Top Gate Turn-Off Delay
Pin 6 () Transition, Meas. V15 V13 (Note 3)
q
350
550
350
550
ns
t
F
Top Gate Fall Time
Pin 6 () Transition, Meas. V15 V13 (Note 3)
q
120
250
120
250
ns
t
R
Bottom Gate Rise Time
Pin 6 () Transition, Meas. V9 (Note 3)
q
130
250
130
250
ns
t
D
Bottom Gate Turn-Off Delay
Pin 6 (+) Transition, Meas. V9 (Note 3)
q
200
400
200
400
ns
t
F
Bottom Gate Fall Time
Pin 6 (+) Transition, Meas. V9 (Note 3)
q
100
200
100
200
ns
open, Gate Feedback pins connected to Gate Drive pins unless otherwise specified.
LT1158
4
Charge Pump Output Voltage
Input Thresholds
Enable Thresholds
SUPPLY VOLTAGE (V)
0
2.0
2.5
3.0
30
LT1158 G07
1.5
1.0
10
20
40
0.5
0
3.5
V(HIGH)
V(LOW)
40C
+25C
+85C
40C
+25C
+85C
ENABLE THRESHOLD VOLTAGE (V)
5
15
25
35
Fault Conduction Threshold
SUPPLY VOLTAGE (V)
0
60
FAULT CONDUCTION THRESHOLD (mV)
70
90
100
110
160
130
10
20
25
LT1158 G08
80
140
150
120
5
15
30
35
40
V11 = 0V
40C
+25C
+85C
Current Limit Threshold
SUPPLY VOLTAGE (V)
0
100
CURRENT LIMIT THRESHOLD (mV)
110
130
140
150
200
170
10
20
25
LT1158 G09
120
180
190
160
5
15
30
35
40
CLOSED LOOP
+85C
40C
+25C
Current Limit Inhibit V
DS
Threshold
SUPPLY VOLTAGE (V)
0
1.00
CURRENT LIMIT INHIBIT THRESHOLD (V)
1.05
1.15
1.20
1.25
1.50
1.35
10
20
25
LT1158 G10
1.10
1.40
1.45
1.30
5
15
30
35
40
V2 V11
40C
+25C
+85C
Bottom Gate Rise Time
SUPPLY VOLTAGE (V)
0
BOTTOM GATE RISE TIME (ns)
200
250
300
40
LT1158 G11
150
100
0
10
20
30
50
400
350
C
GATE
= 10000pF
C
GATE
= 1000pF
C
GATE
= 3000pF
5
15
25
35
Bottom Gate Fall Time
SUPPLY VOLTAGE (V)
0
BOTTOM GATE FALL TIME (ns)
200
250
300
40
LT1158 G12
150
100
0
10
20
30
50
400
350
C
GATE
= 10000pF
C
GATE
= 1000pF
C
GATE
= 3000pF
5
15
25
35
INPUT FREQUENCY (kHz)
1
0
SUPPLY CURRENT (mA)
5
10
15
20
40
10
100
LT1158 G04
25
30
35
C
GATE
= 10000pF
50% DUTY CYCLE
V
+
= 12V
C
GATE
= 1000pF
C
GATE
= 3000pF
Dynamic Supply Current
SUPPLY VOLTAGE (V)
0
0
TOP GATE VOLTAGE (V)
5
15
20
25
50
35
10
20
25
LT1158 G05
10
40
45
30
5
15
30
35
40
10
A LOAD
NO LOAD
SUPPLY VOLTAGE (V)
0
0.8
INPUT THRESHOLD VOLTAGE (V) 1.0
1.2
1.4
1.6
10
20
30
40
LT1158 G06
1.8
2.0
5
15
25
35
V(HIGH)
V(LOW)
40C
+25C
+85C
40C
+25C
+85C
TYPICAL PERFOR
M
A
N
CE CHARACTERISTICS
U
W
LT1158
5
SUPPLY VOLTAGE (V)
0
TOP GATE RISE TIME (ns)
200
250
300
40
LT1158 G13
150
100
0
10
20
30
50
400
350
C
GATE
= 10000pF
C
GATE
= 1000pF
C
GATE
= 3000pF
5
15
25
35
Top Gate Rise Time
Top Gate Fall Time
SUPPLY VOLTAGE (V)
0
TOP GATE FALL TIME (ns)
200
250
300
40
LT1158 G14
150
100
0
10
20
30
50
400
350
C
GATE
= 10000pF
C
GATE
= 1000pF
C
GATE
= 3000pF
5
15
25
35
Transition Times vs R
Gate
GATE RESISTANCE (
)
0
TRANSITION TIMES (ns)
600
800
80
LT1158 G15
400
200
0
20
40
60
100
700
500
300
100
10
30
50
70
90
V
+
= 12V
C
GATE
= 3000pF
RISE TIME
FALL TIME
Pin 1 (Boost Drive): Recharges and clamps the bootstrap
capacitor to 14.5V higher than pin 13 via an external diode.
Pin 2 (V
+
): Main supply pin; must be closely decoupled to
the ground pin 7.
Pin 3 (Bias): Decouple point for the internal 2.6V bias
generator.
Pin 3 cannot have any external DC loading.
Pin 4 (Enable): When left open, the LT1158 operates
normally. Pulling pin 4 low holds both MOSFETs off
regardless of the input state.
Pin 5 (Fault): Open collector NPN output which turns on
when V12 V11 exceeds the fault conduction threshold.
Pin 6 (Input): Taking pin 6 high turns the top MOSFET on
and bottom MOSFET off; pin 6 low reverses these states.
An input latch captures each low state, ignoring an ensu-
ing high until pin 13 has gone below 2.6V.
Pin 8 (Bottom Gate Feedback): Must connect directly to
the bottom power MOSFET gate. The top MOSFET turn-on
is inhibited until pin 8 has discharged to 1.5V. A hold-on
current source also feeds the bottom gate via pin 8.
Pin 9 (Bottom Gate Drive): The high current drive point
for the bottom MOSFET. When a gate resistor is used, it is
inserted between pin 9 and the gate of the MOSFET.
PI FU CTIO S
U
U
U
Pin 10 (V
+
): Bottom side driver supply; must be con-
nected to the same supply as pin 2.
Pin 11 (Sense Negative): The floating reference for the
current limit comparator. Connects to the low side of a
current shunt or Kelvin lead of a current-sensing MOSFET.
When pin 11 is within 1.2V of V
+
, current limit is inhibited.
Pin 12 (Sense Positive): Connects to the high side of the
current shunt or sense lead of a current-sensing MOSFET.
A built-in offset between pins 11 and 12 in conjunction
with R
SENSE
sets the top MOSFET short-circuit current.
Pin 13 (Top Source): Top side driver return; connects to
MOSFET source and low side of the bootstrap capacitor.
Pin 14 (Top Gate Feedback): Must connect directly to the
top power MOSFET gate. The bottom MOSFET turn-on is
inhibited until V14 V13 has discharged to 1.75V. An on-
chip charge pump also feeds the top gate via pin 14.
Pin 15 (Top Gate Drive): The high current drive point for
the top MOSFET. When a gate resistor is used, it is inserted
between pin 15 and the gate of the MOSFET.
Pin 16 (Boost): Top side driver supply; connects to the
high side of the bootstrap capacitor and to a diode either
from supply (V
+
< 10V) or from pin 1 (V
+
> 10V).
TYPICAL PERFOR
M
A
N
CE CHARACTERISTICS
U
W
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