1
LT1160/LT1162
Half-/Full-Bridge
N-Channel
Power MOSFET Drivers
s
Floating Top Driver Switches Up to 60V
s
Drives Gate of Top N-Channel MOSFET
above Load HV Supply
s
180ns Transition Times Driving 10,000pF
s
Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
s
Top Drive Protection at High Duty Cycles
s
TTL/CMOS Input Levels
s
Undervoltage Lockout with Hysteresis
s
Operates at Supply Voltages from 10V to 15V
s
Separate Top and Bottom Drive Pins
The LT
1160/LT1162 are cost effective half-/full-bridge
N-channel power MOSFET drivers. The floating driver can
drive the topside N-channel power MOSFETs operating off
a high voltage (HV) rail of up to 60V.
The internal logic prevents the inputs from turning on the
power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent the
power MOSFETs from being partially turned on. The 0.5V
hysteresis allows reliable operation even with slowly vary-
ing supplies.
The LT1162 is a dual version of the LT1160 and is available
in a 24-pin PDIP or in a 24-pin SO Wide package.
FEATURES
DESCRIPTIO
N
U
s
PWM of High Current Inductive Loads
s
Half-Bridge and Full-Bridge Motor Control
s
Synchronous Step-Down Switching Regulators
s
3-Phase Brushless Motor Drive
s
High Current Transducer Drivers
s
Class D Power Amplifiers
APPLICATIO
N
S
U
, LTC and LT are registered trademarks of Linear Technology Corporation.
TYPICAL APPLICATIO
N
U
+
+
+
SV
+
PV
+
UV OUT
IN TOP
IN BOTTOM
14
13
12
11
9
8
1
10
4
2
3
BOOST
T GATE DR
T GATE FB
T SOURCE
B GATE DR
B GATE FB
LT1160
1N4148
HV = 60V MAX
C
BOOST
1
F
10
F
25V
12V
PWM
0Hz TO 100kHz
1160 TA01
IRFZ44
IRFZ44
5
6
1000
F
100V
SGND
PGND
IN TOP IN BOTTOM T GATE DR B GATE DR
L
L
L
L
L
H
L
H
H
L
H
L
H
H
L
L
2
LT1160/LT1162
ABSOLUTE
M
AXI
M
U
M
RATINGS
W
W
W
U
Supply Voltage (Note 1).......................................... 20V
Boost Voltage ......................................................... 75V
Peak Output Currents (< 10
s) .............................. 1.5A
Input Pin Voltages .......................... 0.3V to V
+
+ 0.3V
Top Source Voltage ..................................... 5V to 60V
Boost to Source Voltage ........................... 0.3V to 20V
Operating Temperature Range
Commercial .......................................... 0
C to 70
C
Industrial ......................................... 40
C to 85
C
Junction Temperature (Note 2) ............................ 125
C
Storage Temperature Range ................ 65
C to 150
C
Lead Temperature (Soldering, 10 sec) ................. 300
C
PACKAGE/ORDER I
N
FOR
M
ATIO
N
W
U
U
ORDER PART
NUMBER
LT1162CN
LT1162CSW
LT1162IN
LT1162ISW
ORDER PART
NUMBER
LT1160CN
LT1160CS
LT1160IN
LT1160IS
T
JMAX
= 125
C,
JA
= 58
C/ W (N)
T
JMAX
= 125
C,
JA
= 80
C/ W (SW)
Consult factory for Military grade parts.
Test Circuit, T
A
= 25
C, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V, C
GATE
= 3000pF.
Gate Feedback pins connected to Gate Drive pins, unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
I
S
DC Supply Current (Note 3)
V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 2V
7
11
15
mA
V
+
= 15V, V
INTOP
= 2V, V
INBOTTOM
= 0.8V
7
10
15
mA
V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 0.8V
7
11
15
mA
I
BOOST
Boost Current (Note 3)
V
+
= 15V, V
TSOURCE
= 60V, V
BOOST
= 75V,
3
4.5
6
mA
V
INTOP
= V
INBOTTOM
= 0.8V
V
IL
Input Logic Low
q
1.4
0.8
V
V
IH
Input Logic High
q
2
1.7
V
I
IN
Input Current
V
INTOP
= V
INBOTTOM
= 4V
q
7
25
A
V
+
UVH
V
+
Undervoltage Start-Up Threshold
8.4
8.9
9.4
V
V
+
UVL
V
+
Undervoltage Shutdown Threshold
7.8
8.3
8.8
V
V
BUVH
V
BOOST
Undervoltage Start-Up Threshold
V
TSOURCE
= 60V (V
BOOST
V
TSOURCE
)
8.8
9.3
9.8
V
V
BUVL
V
BOOST
Undervoltage Shutdown Threshold
V
TSOURCE
= 60V (V
BOOST
V
TSOURCE
)
8.2
8.7
9.2
V
ELECTRICAL CHARACTERISTICS
T
JMAX
= 125
C,
JA
= 70
C/ W (N)
T
JMAX
= 125
C,
JA
= 110
C/ W (S)
1
2
3
4
5
6
7
TOP VIEW
N PACKAGE
14-LEAD PDIP
S PACKAGE
14-LEAD PLASTIC SO
14
13
12
11
10
9
8
SV
+
IN TOP
IN BOTTOM
UV OUT
SGND
PGND
NC
BOOST
T GATE DR
T GATE FB
T SOURCE
PV
+
B GATE DR
B GATE
FB
1
2
3
4
5
6
7
8
9
10
11
12
TOP VIEW
N PACKAGE
24-LEAD PDIP
24
23
22
21
20
19
18
17
16
15
14
13
SW PACKAGE
24-LEAD PLASTIC SO WIDE
SV
+
A
IN TOP
A
IN BOTTOM
A
UV
OUT
A
GND A
B GATE FB A
SV
+
B
IN TOP B
IN BOTTOM B
UV
OUT
B
GND B
B GATE FB B
BOOST A
T GATE DR A
T GATE FB A
T SOURCE A
PV
+
A
B GATE DR A
BOOST B
T GATE DR B
T GATE FB B
T SOURCE B
PV
+
B
B GATE DR B
3
LT1160/LT1162
I
UVOUT
Undervoltage Output Leakage
V
+
= 15V
q
0.1
5
A
V
UVOUT
Undervoltage Output Saturation
V
+
= 7.5V, I
UVOUT
= 2.5mA
q
0.2
0.4
V
V
OH
Top Gate ON Voltage
V
INTOP
= 2V, V
INBOTTOM
= 0.8V
q
11
11.3
12
V
Bottom Gate ON Voltage
V
INTOP
= 0.8V, V
INBOTTOM
= 2V
q
11
11.3
12
V
V
OL
Top Gate OFF Voltage
V
INTOP
= 0.8V, V
INBOTTOM
= 2V
q
0.4
0.7
V
Bottom Gate OFF Voltage
V
INTOP
= 2V, V
INBOTTOM
= 0.8V
q
0.4
0.7
V
t
r
Top Gate Rise Time
V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
q
130
200
ns
Measured at V
TGATE DR
(Note 4)
Bottom Gate Rise Time
V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
q
90
200
ns
Measured at V
BGATE DR
(Note 4)
t
f
Top Gate Fall Time
V
INTOP
() Transition, V
INBOTTOM
= 0.8V,
q
60
140
ns
Measured at V
TGATE DR
(Note 4)
Bottom Gate Fall Time
V
INBOTTOM
() Transition, V
INTOP
= 0.8V,
q
60
140
ns
Measured at V
BGATE DR
(Note 4)
t
D1
Top Gate Turn-On Delay
V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
q
250
500
ns
Measured at V
TGATE DR
(Note 4)
Bottom Gate Turn-On Delay
V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
q
200
400
ns
Measured at V
BGATE DR
(Note 4)
t
D2
Top Gate Turn-Off Delay
V
INTOP
() Transition, V
INBOTTOM
= 0.8V,
q
300
600
ns
Measured at V
TGATE DR
(Note 4)
Bottom Gate Turn-Off Delay
V
INBOTTOM
() Transition, V
INTOP
= 0.8V,
q
200
400
ns
Measured at V
BGATE DR
(Note 4)
t
D3
Top Gate Lockout Delay
V
INBOTTOM
(+) Transition, V
INTOP
= 2V,
q
300
600
ns
Measured at V
TGATE DR
(Note 4)
Bottom Gate Lockout Delay
V
INTOP
(+) Transition, V
INBOTTOM
= 2V,
q
250
500
ns
Measured at V
BGATE DR
(Note 4)
t
D4
Top Gate Release Delay
V
INBOTTOM
() Transition, V
INTOP
= 2V,
q
250
500
ns
Measured at V
TGATE DR
(Note 4)
Bottom Gate Release Delay
V
INTOP
() Transition, V
INBOTTOM
= 2V,
q
200
400
ns
Measured at V
BGATE DR
(Note 4)
Test Circuit, T
A
= 25
C, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V, C
GATE
= 3000pF.
Gate Feedback pins connected to Gate Drive pins, unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
ELECTRICAL CHARACTERISTICS
The
q
denotes specifications which apply over the full operating
temperature range.
Note 1: For the LT1160, Pins 1, 10 should be connected together. For the
LT1162, Pins 1, 7, 14, 20 should be connected together.
Note 2: T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formulas:
LT1160CN/LT1160IN: T
J
= T
A
+ (P
D
)(70
C/W)
LT1160CS/LT1160IS: T
J
= T
A
+ (P
D
)(110
C/W)
LT1162CN/LT1162IN: T
J
= T
A
+ (P
D
)(58
C/W)
LT1162CS/LT1162IS: T
J
= T
A
+ (P
D
)(80
C/W)
Note 3: I
S
is the sum of currents through SV
+
, PV
+
and Boost pins.
I
BOOST
is the current through the Boost pin. Dynamic supply current is
higher due to the gate charge being delivered at the switching frequency.
See Typical Performance Characteristics and Applications Information
sections. The LT1160 = 1/2 LT1162.
Note 4: See Timing Diagram. Gate rise times are measured from 2V to 10V
and fall times are measured from 10V to 2V. Delay times are measured
from the input transition to when the gate voltage has risen to 2V or
decreased to 10V.
4
LT1160/LT1162
TYPICAL PERFOR
M
A
N
CE CHARACTERISTICS
U
W
INPUT FREQUENCY (kHz)
1
SUPPLY CURRENT (mA)
60
50
40
30
20
10
0
10
100
1000
1160/62 G04
C
GATE
= 10000pF
C
GATE
= 1000pF
50% DUTY CYCLE
V
+
= 12V
C
GATE
= 3000pF
TEMPERATURE (
C)
50
V
BOOST
V
TSOURCE
VOLTAGE (V)
100
13
12
11
10
9
8
7
6
5
4
1160/62 G06
0
25
25
50
75
125
SHUTDOWN THRESHOLD
START-UP THRESHOLD
V
TSOURCE
= 60V
TEMPERATURE (
C)
50
INPUT CURRENT (
A)
14
13
12
11
10
9
8
7
6
5
4
0
50
75
1160/62 G08
25
25
100
125
V
+
= 12V
V
IN
= 4V
DC Supply Current
vs Temperature
TEMPERATURE (
C)
50
SUPPLY CURRENT (mA)
100
14
13
12
11
10
9
8
7
6
5
1160/62 G02
0
25
25
50
75
125
BOTH INPUTS
HIGH OR LOW
V
INTOP
= HIGH
V
INBOTTOM
= LOW
V
INTOP
= LOW
V
INBOTTOM
= HIGH
V
+
= 12V
INPUT FREQUENCY (kHz)
1
SUPPLY CURRENT (mA)
60
50
40
30
20
10
0
10
100
1000
1160/62 G03
V
+
= 20V
50% DUTY CYCLE
C
GATE
= 3000pF
V
+
= 15V
V
+
= 10V
DC + Dynamic Supply Current
vs Input Frequency
DC Supply Current
vs Supply Voltage
DC + Dynamic Supply Current
vs Input Frequency
TEMPERATURE (
C)
50
SUPPLY VOLTAGE (V)
100
13
12
11
10
9
8
7
6
5
4
1160/62 G05
0
25
25
50
75
125
SHUTDOWN THRESHOLD
START-UP THRESHOLD
Undervoltage Lockout (V
+
)
Undervoltage Lockout (V
BOOST
)
Input Threshold Voltage
vs Temperature
TEMPERATURE (
C)
50
INPUT THRESHOLD VOLTAGE (V)
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1160/62 G07
0
25
25
50
75
125
V
LOW
V
HIGH
V
+
= 12V
INPUT VOLTAGE (V)
4
INPUT CURRENT (mA)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
8
9
1160/62 G09
5
6
7
10
11
12
V
+
= 12V
Top or Bottom Input Pin Current
vs Input Voltage
(LT1160 or 1/2 LT1162)
SUPPLY VOLTAGE (V)
8
SUPPLY CURRENT (mA)
20
14
13
12
11
10
9
8
7
6
5
1160/62 G01
12
10
14
16
18
22
BOTH INPUTS
HIGH OR LOW
V
INTOP
= LOW
V
INBOTTOM
= HIGH
V
INTOP
= HIGH
V
INBOTTOM
= LOW
Top or Bottom Input Pin Current
vs Temperature
5
LT1160/LT1162
TYPICAL PERFOR
M
A
N
CE CHARACTERISTICS
U
W
TEMPERATURE (
C)
50
BOTTOM GATE RISE TIME (ns)
100
230
210
190
170
150
130
110
90
70
50
1160/62 G10
0
25
25
50
75
125
C
LOAD
= 10000pF
C
LOAD
= 3000pF
C
LOAD
= 1000pF
V
+
= 12V
Bottom Gate Rise Time
vs Temperature
TEMPERATURE (
C)
50
BOTTOM GATE FALL TIME (ns)
100
210
190
170
150
130
110
90
70
50
30
1160/62 G11
0
25
25
50
75
125
C
LOAD
= 10000pF
C
LOAD
= 3000pF
V
+
= 12V
C
LOAD
= 1000pF
Bottom Gate Fall Time
vs Temperature
TEMPERATURE (
C)
50
TOP GATE RISE TIME (ns)
100
300
280
260
240
220
200
180
160
140
120
100
80
1160/62 G12
0
25
25
50
75
125
C
LOAD
= 10000pF
C
LOAD
= 3000pF
V
+
= 12V
C
LOAD
= 1000pF
Top Gate Rise Time
vs Temperature
TEMPERATURE (
C)
50
TOP GATE FALL TIME (ns)
100
11160/62 G13
0
50
180
160
140
120
100
80
60
40
20
25
25
75
125
C
LOAD
= 10000pF
C
LOAD
= 3000pF
V
+
= 12V
C
LOAD
= 1000pF
TEMPERATURE (
C)
50
TURN OFF DELAY TIME (ns)
100
400
350
300
250
200
150
100
1160/62 G15
0
25
25
50
75
125
BOTTOM DRIVER
TOP DRIVER
V
+
= 12V
C
LOAD
= 3000pF
Turn-On Delay Time
vs Temperature
TEMPERATURE (
C)
50
TURN ON DELAY TIME (ns)
100
400
350
300
250
200
150
100
1160/62 G14
0
25
25
50
75
125
BOTTOM DRIVER
TOP DRIVER
V
+
= 12V
C
LOAD
= 3000pF
Turn-Off Delay Time
vs Temperature
TEMPERATURE (
C)
50
LOCKOUT DELAY TIME (ns)
100
400
350
300
250
200
150
100
1160/62 G16
0
25
25
50
75
125
BOTTOM DRIVER
TOP DRIVER
V
+
= 12V
C
LOAD
= 3000pF
Lockout Delay Time
vs Temperature
TEMPERATURE (
C)
50
RELEASE DELAY TIME (ns)
100
400
350
300
250
200
150
100
1160/62 G17
0
25
25
50
75
125
BOTTOM DRIVER
TOP DRIVER
V
+
= 12V
C
LOAD
= 3000pF
Release Delay Time
vs Temperature
(LT1160 or 1/2 LT1162)
Top Gate Fall Time
vs Temperature
PDF 
ZIP