1
LT1167
Single Resistor Gain
Programmable, Precision
Instrumentation Amplifier
Gain Nonlinearity
The LT
1167 is a low power, precision instrumentation
amplifier that requires only one external resistor to set gains
of 1 to 10,000. The low voltage noise of 7.5nV/
Hz (at 1kHz)
is not compromised by low power dissipation (0.9mA typical
for
2.3V to
15V supplies).
The high accuracy of 10ppm maximum nonlinearity and
0.08% max gain error (G = 10) is not degraded even for load
resistors as low as 2k (previous monolithic instrumentation
amps used 10k for their nonlinearity specifications). The
LT1167 is laser trimmed for very low input offset voltage
(40
V max), drift (0.3
V/
C), high CMRR (90dB, G = 1) and
PSRR (105dB, G = 1). Low input bias currents of 350pA max
are achieved with the use of superbeta processing. The
output can handle capacitive loads up to 1000pF in any gain
configuration while the inputs are ESD protected up to 13kV
(human body). The LT1167 with two external 5k resistors
passes the IEC 1000-4-2 level 4 specification.
The LT1167, offered in 8-pin PDIP and SO packages, requires
significantly less PC board area than discrete multi op amp
and resistor designs. These advantages make the LT1167 the
most cost effective solution for precision instrumentation
amplifier applications.
s
Single Gain Set Resistor: G = 1 to 10,000
s
Gain Error: G = 10, 0.08% Max
s
Gain Nonlinearity: G = 10, 10ppm Max
s
Input Offset Voltage: G = 10, 60
V Max
s
Input Offset Voltage Drift: 0.3
V/
C Max
s
Input Bias Current: 350pA Max
s
PSRR at G = 1: 105dB Min
s
CMRR at G = 1: 90dB Min
s
Supply Current: 1.3mA Max
s
Wide Supply Range:
2.3V to
18V
s
1kHz Voltage Noise: 7.5nV/
Hz
s
0.1Hz to 10Hz Noise: 0.28
V
P-P
s
Available in 8-Pin PDIP and SO Packages
s
Meets IEC 1000-4-2 Level 4 ESD Tests with
Two External 5k Resistors
FEATURES
DESCRIPTIO
N
U
, LTC and LT are registered trademarks of Linear Technology Corporation.
s
Bridge Amplifiers
s
Strain Gauge Amplifiers
s
Thermocouple Amplifiers
s
Differential to Single-Ended Converters
s
Medical Instrumentation
APPLICATIO
N
S
U
+
+
+
2
1
1
1
1
2
R5
392k
R4
50k
R3
50k
R8
100k
R6
1k
LT1634CCZ-1.25
8
4
1/2
LT1490
3
R
SET
0.2% ACCURACY AT 25
C
1.2% ACCURACY AT 0
C TO 60
C
V
S
= 8V TO 30V
5k
5k
5k
5k
V
S
5
4
3
2
+
7
1/2
LT1490
5
6
2
8
LUCAS NOVA SENOR
NPC-1220-015-A-3L
7
V
S
6
1167 TA01
5
TO
4-DIGIT
DVM
4
R2
12
LT1167
G = 60
R1
825
3
6
R7
50k
VOLTS
2.800
3.000
3.200
INCHES Hg
28.00
30.00
32.00
TYPICAL APPLICATIO
N
U
Single Supply Barometer
G = 1000
R
L
= 1k
V
OUT
=
10V
1167 TA02
OUTPUT VOLTAGE (2V/DIV)
NONLINEARITY (100ppm/DIV)
2
LT1167
ABSOLUTE
M
AXI
M
U
M
RATINGS
W
W
W
U
ORDER PART
NUMBER
PACKAGE/ORDER I
N
FOR
M
ATIO
N
W
U
U
S8 PART MARKING
LT1167ACN8
LT1167ACS8
LT1167AIN8
LT1167AIS8
LT1167CN8
LT1167CS8
LT1167IN8
LT1167IS8
1167A
1167AI
Consult factory for Military grade parts.
1
2
3
4
8
7
6
5
TOP VIEW
R
G
IN
+IN
V
S
R
G
+V
S
OUTPUT
REF
N8 PACKAGE
8-LEAD PDIP
S8 PACKAGE
8-LEAD PLASTIC SO
+
T
JMAX
= 150
C,
JA
= 130
C/ W (N8)
T
JMAX
= 150
C,
JA
= 190
C/ W (S8)
1167
1167I
ELECTRICAL CHARACTERISTICS
V
S
=
15V, V
CM
= 0V, T
A
= 25
C, R
L
= 2k, unless otherwise noted.
LT1167AC/LT1167AI
LT1167C/LT1167I
SYMBOL PARAMETER
CONDITIONS (Note 7)
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
G
Gain Range
G = 1 + (49.4k/R
G
)
1
10k
1
10k
Gain Error
G = 1
0.008
0.02
0.015
0.03
%
G = 10 (Note 2)
0.010
0.08
0.020
0.10
%
G = 100 (Note 2)
0.025
0.08
0.030
0.10
%
G = 1000 (Note 2)
0.040
0.10
0.040
0.10
%
Gain Nonlinearity (Note 5)
V
O
=
10V, G = 1
1
6
1.5
10
ppm
V
O
=
10V, G = 10 and 100
2
10
3
15
ppm
V
O
=
10V, G = 1000
15
40
20
60
ppm
V
O
=
10V, G = 1, R
L
= 600
5
12
6
15
ppm
V
O
=
10V, G = 10 and 100,
6
15
7
20
ppm
R
L
= 600
V
O
=
10V, G = 1000,
20
65
25
80
ppm
R
L
= 600
V
OST
Total Input Referred Offset Voltage V
OST
= V
OSI
+ V
OSO
/G
V
OSI
Input Offset Voltage
G = 1000, V
S
=
5V to
15V
15
40
20
60
V
V
OSO
Output Offset Voltage
G = 1, V
S
=
5V to
15V
40
200
50
300
V
I
OS
Input Offset Current
90
320
100
450
pA
I
B
Input Bias Current
50
350
80
500
pA
e
n
Input Noise Voltage, RTI
0.1Hz to 10Hz, G = 1
2.00
2.00
V
P-P
0.1Hz to 10Hz, G = 10
0.50
0.50
V
P-P
0.1Hz to 10Hz, G = 100 and 1000
0.28
0.28
V
P-P
Total RTI Noise =
e
ni
2
+ (e
no
/G)
2
e
ni
Input Noise Voltage Density, RTI
f
O
= 1kHz
7.5
12
7.5
12
nV/
Hz
e
no
Output Noise Voltage Density, RTI
f
O
= 1kHz (Note 3)
67
90
67
90
nV/
Hz
(Note 1)
Supply Voltage ......................................................
20V
Differential Input Voltage (Within the
Supply Voltage) .....................................................
40V
Input Voltage (Equal to Supply Voltage) ................
20V
Input Current (Note 3) ........................................
20mA
Output Short-Circuit Duration .......................... Indefinite
Operating Temperature Range ................ 40
C to 85
C
Specified Temperature Range
LT1167AC/LT1167C (Note 4) .................. 0
C to 70
C
LT1167AI/LT1167I ............................. 40
C to 85
C
Storage Temperature Range ................. 65
C to 150
C
Lead Temperature (Soldering, 10 sec) .................. 300
C
3
LT1167
LT1167AC/LT1167AI LT1167C/LT1167I
SYMBOL
PARAMETER
CONDITIONS (Note 7)
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
i
n
Input Noise Current
f
O
= 0.1Hz to 10Hz
10
10
pA
P-P
Input Noise Current Density
f
O
= 10Hz
124
124
fA/
Hz
R
IN
Input Resistance
V
IN
=
10V
200
1000
200
1000
G
C
IN(DIFF)
Differential Input Capacitance
f
O
= 100kHz
1.6
1.6
pF
C
IN(CM)
Common Mode Input
f
O
= 100kHz
1.6
1.6
pF
Capacitance
V
CM
Input Voltage Range
G = 1, Other Input Grounded
V
S
=
2.3V to
5V
V
S
+ 1.9
+ V
S
1.2
V
S
+ 1.9
+ V
S
1.2
V
V
S
=
5V to
18V
V
S
+ 1.9
+ V
S
1.4
V
S
+ 1.9
+ V
S
1.4
V
CMRR
Common Mode
1k Source Imbalance,
Rejection Ratio
V
CM
= 0V to
10V
G = 1
90
95
85
95
dB
G = 10
106
115
100
115
dB
G = 100
120
125
110
125
dB
G = 1000
126
140
120
140
dB
PSRR
Power Supply
V
S
=
2.3 to
18V
Rejection Ratio
G = 1
105
120
100
120
dB
G = 10
125
135
120
135
dB
G = 100
131
140
126
140
dB
G = 1000
135
150
130
150
dB
I
S
Supply Current
V
S
=
2.3V to
18V
0.9
1.3
0.9
1.3
mA
V
OUT
Output Voltage Swing
R
L
= 10k
V
S
=
2.3V to
5V
V
S
+ 1.1
+ V
S
1.2
V
S
+ 1.1
+ V
S
1.2
V
V
S
=
5V to
18V
V
S
+ 1.2
+ V
S
1.3
V
S
+ 1.2
+ V
S
1.3
V
I
OUT
Output Current
20
27
20
27
mA
BW
Bandwidth
G = 1
1000
1000
kHz
G = 10
800
800
kHz
G = 100
120
120
kHz
G = 1000
12
12
kHz
SR
Slew Rate
G = 1, V
OUT
=
10V
0.75
1.2
0.75
1.2
V/
s
Settling Time to 0.01%
10V Step
G = 1 to 100
14
14
s
G = 1000
130
130
s
R
REFIN
Reference Input Resistance
20
20
k
I
REFIN
Reference Input Current
V
REF
= 0V
50
50
A
V
REF
Reference Voltage Range
V
S
+ 1.6
+ V
S
1.6
V
S
+ 1.6
+ V
S
1.6
V
A
VREF
Reference Gain to Output
1
0.0001
1
0.0001
ELECTRICAL CHARACTERISTICS
V
S
=
15V, V
CM
= 0V, T
A
= 25
C, R
L
= 2k, unless otherwise noted.
4
LT1167
ELECTRICAL CHARACTERISTICS
V
S
=
15V, V
CM
= 0V, 0
C
T
A
70
C, R
L
= 2k, unless otherwise noted.
LT1167AC
LT1167C
SYMBOL
PARAMETER
CONDITIONS (Note 7)
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
Gain Error
G = 1
q
0.01
0.03
0.012
0.04
%
G = 10 (Note 2)
q
0.08
0.30
0.100
0.33
%
G = 100 (Note 2)
q
0.09
0.30
0.120
0.33
%
G = 1000 (Note 2)
q
0.14
0.33
0.140
0.35
%
Gain Nonlinearity
V
OUT
=
10V, G = 1
q
1.5
10
2
15
ppm
V
OUT
=
10V, G = 10 and 100
q
3
15
4
20
ppm
V
OUT
=
10V, G = 1000
q
20
60
25
80
ppm
G/T
Gain vs Temperature
G < 1000 (Note 2)
q
20
50
20
50
ppm/
C
V
OST
Total Input Referred
V
OST
= V
OSI
+ V
OSO
/G
Offset Voltage
V
OSI
Input Offset Voltage
V
S
=
5V to
15V
q
18
60
23
80
V
V
OSIH
Input Offset Voltage Hysteresis
(Notes 3, 6)
3.0
3.0
V
V
OSO
Output Offset Voltage
V
S
=
5V to
15V
q
60
380
70
500
V
V
OSOH
Output Offset Voltage Hysteresis
(Notes 3, 6)
30
30
V
V
OSI
/T
Input Offset Drift (RTI)
(Note 3)
q
0.05
0.3
0.06
0.4
V/
C
V
OSO
/T
Output Offset Drift
(Note 3)
q
0.7
3
0.8
4
V/
C
I
OS
Input Offset Current
q
100
400
120
550
pA
I
OS
/T
Input Offset Current Drift
q
0.3
0.4
pA/
C
I
B
Input Bias Current
q
75
450
105
600
pA
I
B
/T
Input Bias Current Drift
q
0.4
0.4
pA/
C
V
CM
Input Voltage Range
G = 1, Other Input Grounded
V
S
=
2.3V to
5V
q
V
S
+ 2.1
+ V
S
1.3
V
S
+ 2.1
+ V
S
1.3
V
V
S
=
5V to
18V
q
V
S
+ 2.1
+ V
S
1.4
V
S
+ 2.1
+ V
S
1.4
V
CMRR
Common Mode
1k Source Imbalance,
Rejection Ratio
V
CM
= 0V to
10V
G = 1
q
88
92
83
92
dB
G = 10
q
100
110
97
110
dB
G = 100
q
115
120
113
120
dB
G = 1000
q
117
135
114
135
dB
PSRR
Power Supply Rejection Ratio
V
S
=
2.3V to
18V
G = 1
q
103
115
98
115
dB
G = 10
q
123
130
118
130
dB
G = 100
q
127
135
124
135
dB
G = 1000
q
129
145
126
145
dB
I
S
Supply Current
V
S
=
2.3V to
18V
q
1.0
1.5
1.0
1.5
mA
V
OUT
Output Voltage Swing
R
L
= 10k
V
S
=
2.3V to
5V
q
V
S
+ 1.4
+ V
S
1.3
V
S
+ 1.4
+ V
S
1.3
V
V
S
=
5V to
18V
q
V
S
+ 1.6
+ V
S
1.5
V
S
+ 1.6
+ V
S
1.5
V
I
OUT
Output Current
q
16
21
16
21
mA
SR
Slew Rate
G = 1, V
OUT
=
10V
q
0.65
1.1
0.65
1.1
V/
s
V
REF
REF Voltage Range
(Note 3)
q
V
S
+ 1.6
+ V
S
1.6
V
S
+ 1.6
+ V
S
1.6
V
5
LT1167
ELECTRICAL CHARACTERISTICS
V
S
=
15V, V
CM
= 0V, 40
C
T
A
85
C, R
L
= 2k, unless otherwise noted. (Note 4)
LT1167AI
LT1167I
SYMBOL
PARAMETER
CONDITIONS (Note 7)
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
Gain Error
G = 1
q
0.014
0.04
0.015
0.05
%
G = 10 (Note 2)
q
0.130
0.40
0.140
0.42
%
G = 100 (Note 2)
q
0.140
0.40
0.150
0.42
%
G = 1000 (Note 2)
q
0.160
0.40
0.180
0.45
%
G
N
Gain Nonlinearity (Notes 2, 4)
V
O
=
10V, G = 1
q
2
15
3
20
ppm
V
O
=
10V, G = 10 and 100
q
5
20
6
30
ppm
V
O
=
10V, G = 1000
q
26
70
30
100
ppm
G/T
Gain vs Temperature
G < 1000 (Note 2)
q
20
50
20
50
ppm/
C
V
OST
Total Input Referred
V
OST
= V
OSI
+ V
OSO
/G
Offset Voltage
V
OSI
Input Offset Voltage
q
20
75
25
100
V
V
OSIH
Input Offset Voltage Hysteresis
(Notes 3, 6)
3.0
3.0
V
V
OSO
Output Offset Voltage
q
180
500
200
600
V
V
OSOH
Output Offset Voltage Hysteresis (Notes 3, 6)
30
30
V
V
OSI
/T
Input Offset Drift (RTI)
(Note 3)
q
0.05
0.3
0.06
0.4
V/
C
V
OSO
/T
Output Offset Drift
(Note 3)
q
0.8
5
1
6
V/
C
I
OS
Input Offset Current
q
110
550
120
700
pA
I
OS
/T
Input Offset Current Drift
q
0.3
0.3
pA/
C
I
B
Input Bias Current
q
180
600
220
800
pA
I
B
/T
Input Bias Current Drift
q
0.5
0.6
pA/
C
V
CM
Input Voltage Range
V
S
=
2.3V to
5V
q
V
S
+ 2.1
+ V
S
1.3
V
S
+ 2.1
+V
S
1.3
V
V
S
=
5V to
18V
q
V
S
+ 2.1
+ V
S
1.4
V
S
+ 2.1
+ V
S
1.4
V
CMRR
Common Mode Rejection Ratio
1k Source Imbalance,
V
CM
= 0V to
10V
G = 1
q
86
90
81
90
dB
G = 10
q
98
105
95
105
dB
G = 100
q
114
118
112
118
dB
G = 1000
q
116
133
112
133
dB
PSRR
Power Supply Rejection Ratio
V
S
=
2.3V to
18V
G = 1
q
100
112
95
112
dB
G = 10
q
120
125
115
125
dB
G = 100
q
125
132
120
132
dB
G = 1000
q
128
140
125
140
dB
I
S
Supply Current
q
1.1
1.6
1.1
1.6
mA
V
OUT
Output Voltage Swing
V
S
=
2.3V to
5V
q
V
S
+ 1.4
+ V
S
1.3
V
S
+ 1.4
+ V
S
1.3
V
V
S
=
5V to
18V
q
V
S
+ 1.6
+ V
S
1.5
V
S
+ 1.6
+ V
S
1.5
V
I
OUT
Output Current
q
15
20
15
20
mA
SR
Slew Rate
G = 1, V
OUT
=
10V
q
0.55
0.95
0.55
0.95
V/
s
V
REF
REF Voltage Range
(Note 3)
q
V
S
+ 1.6
+ V
S
1.6
V
S
+ 1.6
+ V
S
1.6
V
The
q
denotes specifications that apply over the full specified
temperature range.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be imparied.
Note 2: Does not include the effect of the external gain resistor R
G
.
Note 3: This parameter is not 100% tested.
Note 4: The LT1167AC/LT1167C are designed, characterized and expected
to meet the industrial temperature limits, but are not tested at 40
C and
85
C. I-grade parts are guaranteed.
Note 5: This parameter is measured in a high speed automatic tester that
does not measure the thermal effects with longer time constants. The
magnitude of these thermal effects are dependent on the package used,
heat sinking and air flow conditions.
Note 6: Hysteresis in offset voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Offset voltage hysteresis is always measured at 25
C, but
the IC is cycled to 85
C I-grade (or 70
C C-grade) or 40
C I-grade
(0
C C-grade) before successive measurement. 60% of the parts will
pass the typical limit on the data sheet.
Note 7: Typical parameters are defined as the 60% of the yield parameter
distribution.
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