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Электронный компонент: RH111

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1
RH111
Voltage Comparator
The RH111 is a general purpose voltage comparator. The
RH111 offers maximum input offset voltage of 3mV and
input offset current of 10nA with a typical response time
of 200ns. The RH111 can operate from a single 5V supply
to
15V supplies and can drive up to 50mA loads referred
to ground or either supply. A separate output Ground pin
allows output signals to be isolated from analog ground.
The wafer lots are processed to the requirements of
MIL-STD-883 Class S to yield circuits usable in precision
space applications.
Supply Voltage (Pin 8 to Pin 4)................................ 36V
Output to Negative Supply (Pin 7 to Pin 4) .............. 35V
Ground to Negative Supply (Pin 1 to Pin 4) ............. 30V
Differential Input Voltage ......................................... 35V
Voltage at Strobe Pin (Pin 6 to Pin 8) ........................ 5V
Input Voltage (Note 1) ...........................................
15V
Output Short-Circuit Duration ............................. 10 sec
Operating Temperature
Range (Note 2) ................................ 55
C to 125
C
Storage Temperature Range ................. 65
C to 150
C
Lead Temperature (Soldering, 10 sec) .................. 300
C
D
U
ESCRIPTIO
A
U
G
W
A
W
U
W
A
R
BSOLUTE
XI
TI
S
, LTC and LT are registered trademarks of Linear Technology Corporation.
BUR -I CIRCUIT
U
U
TOP VIEW
OUT
V
GND
+IN
BALANCE/
STROBE
BALANCE
IN
V
+
8
7
6
5
3
2
1
4
H PACKAGE
8-LEAD TO-5 METAL CAN
+
1
2
3
4
8
7
6
5
TOP VIEW
GND
+IN
IN
V
V
+
OUT
BALANCE/
STROBE
BALANCE
J8 PACKAGE
8-LEAD CERDIP
TOP VIEW
W PACKAGE
10-LEAD CERPAC
1
5
4
3
2
10
6
7
8
9
GND
+IN
IN
NC
V
V
+
OUTPUT
NC
BAL/STROBE
BAL
W
U
U
PACKAGE/ORDER I FOR ATIO
OR
+
7
5
18V
18V
8
2
50k
50k
50k
1.3k
200
3
4
1
RH111 BI01
+
7
2V
15V
15V
8
2
100k
604
3
4
1
RH111 BI02
Note: For ordering information contact LTC.
2
RH111
TABLE 1: ELECTRICAL CHARACTERISTICS
(Preirradiation) (Note 8)
55
C
T
A
125
C
T
A
= 25
C
SUB-
SUB-
SYMBOL PARAMETER
CONDITIONS
NOTES
MIN
TYP
MAX
GROUP
MIN
TYP
MAX
GROUP
UNITS
V
OS
Input Offset Voltage
R
S
50k
3,4
3.0
1
4.0
2,3
mV
I
OS
Input Offset Current
3,4
10
1
20
2,3
nA
I
B
Input Bias Current
3
100
1
150
2,3
nA
A
VOL
Large-Signal Voltage Gain
7
40
4
V/mV
Input Voltage Range
V
S
=
15V, V
PIN7
5V
14.5
13.0
1
14.5
13.0
2,3
V
t
D
Response Time
5
200
ns
V
OL
Output Saturation Voltage
V
IN
= 5mV, I
OUT
= 50mA,
V
+
4.5V, V
= 0V
1.5
1
V
V
IN
6mV, I
OUT
8mA
0.4
1
0.4
2,3
V
Output Leakage Current
V
IN
= 5V, I
STROBE
= 3mA,
10
1
500
2,3
nA
V
OUT
= 20V
Positive Supply Current
6.0
1
mA
Negative Supply Current
5.0
1
mA
Strobe Current
Minimum to Ensure Output
6
3
mA
Transistor Is Turned Off
Input Capacitance
6
pF
SYMBOL
PARAMETER
CONDITIONS
NOTES
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX UNITS
V
OS
Input Offset Voltage
R
S
50k
3.0
3.0
3.0
3.0
4.0
mV
I
OS
Input Offset Current
10
10
10
25
50
nA
I
B
Input Bias Current
100
150
200
300
400
nA
A
VOL
Large-Signal Voltage Gain
7
40
40
40
40
25
V/mV
Input Voltage Range
V
S
=
15V, V
PIN7
5V
14.5
13.0 14.5
13.0
14.5
13.0
14.5
13.0 14.5
13.0
V
V
OL
Output Saturation Voltage
V
IN
= 5mV, I
OUT
= 50mA
V
+
4.5V, V
= 0V
1.5
1.5
1.5
1.5
1.5
V
V
IN
6mV, I
OUT
8mA
0.4
0.4
0.4
0.4
0.4
V
Output Leakage Current
V
IN
5mV, I
STROBE
= 3mA
10
10
100
100
100
nA
V
OUT
= 20V
Positive Supply Current
6.0
6.0
6.0
6.0
6.0
mA
Negative Supply Current
5.0
5.0
5.0
5.0
5.0
mA
Strobe Current
Minimum to Ensure Output
6 3 (Typ) 3(Typ) 3(Typ) 3(Typ) 3(Typ)
mA
Transistor Is Turned Off
Input Capacitance
6 (Typ) 6(Typ) 6(Typ) 6(Typ) 6(Typ)
pF
100KRAD(Si)
50KRAD(Si)
20KRAD(Si)
TABLE 1A: ELECTRICAL CHARACTERISTICS
(Postirradiation) (Note 9)
10KRAD(Si)
200KRAD(Si)
3
RH111
Note 1: Applicable for
15V supplies. The positive input voltage limit is
30V above the negative supply. The negative input voltage limit is the
negative supply.
Note 2: T
JMAX
= 150
C
Note 3: Offset voltage, offset current and bias current specifications apply
for any supply voltage from a single 5V up to
15V supplies.
Note 4: Offset voltage and offset currents shown are the maximum values
required to drive the output within a volt of either supply with a 1mA load.
These parameters define an error band and take into account the worst-
case effects of voltage gain and input impedance.
Note 5: Response time is specified for a 100mV input step with 5mV
overdrive with the collector output terminated with a 500
pull-up resistor
tied to 5V.
Note 6: Do not short the Strobe pin to ground. It should be current driven
at 3mA to 5mA for the shortest strobe time. Currents as low as 500
A will
strobe the RH111 if speed is not important. External leakage on the Strobe
pin in excess of 0.2
A when the strobe is "off " can cause offset voltage
shifts.
Note 7: R
L
= 1k, 10V
V
OUT
14.5V
Note 8: V
S
=
15V, unless otherwise noted.
Note 9: V
S
=
15V, V
CM
= 0V, T
A
= 25
C, unless otherwise noted.
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
MIL-STD-883 TEST REQUIREMENTS
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*,2,3,4
Group A Test Requirements (Method 5005)
1,2,3,4
Group C and D End Point Electrical Parameters
1
(Method 5005)
* PDA Applies to subgroup 1. See PDA Test Notes.
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup
1, after burn-in divided by the total number of devices submitted for burn-
in in that lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
TABLE 2: ELECTRICAL TEST REQUIRE E TS
UW
TOTAL DOSE BIAS CIRCUIT
+
12V
12V
47k
12
12
5.1k
RH111 TA01
4
RH111
LINEAR TECHNOLOGY CORPORATION 1989
LT/HP 0897 500 REV B PRINTED IN USA
I.D. No. 66-11-0111 Rev. B
TYPICAL PERFOR
M
A
N
CE CHARACTERISTICS
U
W
TOTAL DOSE KRAD (Si)
1
INPUT OFFSET VOLTAGE (mV)
8
6
4
2
0
2
4
6
10
100
1000
RH111 G01
Input Offset Voltage
Voltage Gain
TOTAL DOSE KRAD (Si)
1
VOLTAGE GAIN (V/mV)
700
600
500
400
300
200
100
0
10
100
1000
RH111 G02
TOTAL DOSE KRAD (Si)
1
BIAS CURRENT (nA)
350
300
250
200
150
100
50
0
10
100
1000
RH111 G03
Input Bias Current
TOTAL DOSE KRAD (Si)
1
COMMON MODE REJECTION RATIO (dB)
130
120
110
100
90
80
70
60
10
100
1000
RH111 G04
Common Mode Rejection Ratio
TOTAL DOSE KRAD (Si)
1
INPUT OFFSET CURRENT (nA)
30
20
10
0
10
20
30
40
10
100
1000
RH111 G05
Input Offset Current
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
q
(408) 432-1900
FAX: (408) 434-0507
q
TELEX: 499-3977
q
www.linear-tech.com