1
RH27C
Precision Operational Amplifier
T
A
= 25
C
SUB-
SUB-
SYMBOL PARAMETER
CONDITIONS
NOTES
MIN
TYP
MAX
GROUP
MIN
TYP
MAX
GROUP
UNITS
V
OS
Input Offset Voltage
1
100
4
300
2, 3
V
V
OS
Average Offset Drift
4, 7
1.8
V/
C
Temp
V
OS
Long-Term Input Offset
2, 4
2
V/Month
Time
Voltage Stability
I
OS
Input Offset Current
75
1
135
2, 3
nA
I
B
Input Bias Current
80
1
150
2, 3
nA
55
C
T
A
125
C
TABLE 1: ELECTRICAL CHARACTERISTICS
(Preirradiation) (Note 9)
D
U
ESCRIPTIO
A
U
G
W
A
W
U
W
A
R
BSOLUTE
XI
TI
S
The RH27C combines very low noise with excellent preci-
sion and high speed specifications. The low 1/f noise
corner frequency of 2.7Hz combined with 3.5nV
Hz 10Hz
noise and low offset voltage make the RH27C an excellent
choice for low frequency military instrumentation applica-
tions. The wafer lots are processed to LTC's in-house
Class S flow to yield circuits usable in stringent military
applications.
For complete electrical specifications and performance
curves see the OP-27/OP-37 data sheet.
Supply Voltage .....................................................
22V
Internal Power Dissipation ................................ 500mW
Input Voltage ........................... Equal to Supply Voltage
Output Short-Circuit Duration ......................... Indefinite
Differential Input Current (Note 8) .....................
25mA
Operating Temperature Range ............. 55
C to 125
C
Junction Temperature Range ............... 55
C to 150
C
Storage Temperature Range ................ 65
C to 150
C
Lead Temperature (Soldering, 10 sec) ................. 300
C
BUR -I CIRCUIT
U
U
10k
200
10k
20V
20V
7
+
6
4
3
2
OR
20V
20V
7
+
2
8
3
4
W
U
U
PACKAGE/ORDER I FOR ATIO
TOP VIEW
W PACKAGE
10-LEAD CERPAC
1
5
4
3
2
10
6
7
8
9
NC
V
OS
TRIM
IN
+IN
V
NC
V
OS
TRIM
V
+
OUT
NC
+
, LTC and LT are registered trademarks of Linear Technology Corporation.
TOP VIEW
V
+
V
OS
TRIM
V
OS
TRIM
IN
OUT
NC
+IN
V
(CASE)
8
7
6
5
3
2
1
4
H PACKAGE
8-LEAD TO-5 METAL CAN
+
1
2
3
4
8
7
6
5
TOP VIEW
V
OS
TRIM
IN
+IN
V
V
OS
TRIM
V
+
OUT
NC
J8 PACKAGE
8-LEAD CERDIP
+
2
RH27C
TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
NOTES
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX UNITS
V
OS
Input Offset Voltage
1
100
130
180
280
400
V
I
OS
Input Offset Current
75
75
90
120
180
nA
I
B
Input Bias Current
80
80
125
200
400
nA
Input Resistance
2 (Typ)
2 (Typ)
2 (Typ)
2 (Typ)
2 (Typ)
G
Common Mode
Input Voltage Range
4
11
11
11
11
11
V
CMRR
Common Mode
V
CM
=
11V
100
100
97
94
90
dB
Rejection Ratio
PSRR
Power Supply
V
S
=
4V to
18V
94
94
92
90
86
dB
Rejection Ratio
A
VOL
Large-Signal Voltage Gain
R
L
2k, V
O
=
10V
700
700
700
700
400
V/mV
V
OUT
Maximum Output
R
L
10k
11.5
11.5
11.5
11.5
11.5
V
Voltage Swing
R
L
600
10.0
10.0
10.0
10.0
10.0
V
Z
O
Open-Loop Output Resistance V
O
= 0, I
O
= 0
70 (Typ)
70 (Typ)
70 (Typ)
70 (Typ)
70 (Typ)
P
D
Power Dissipation
170
170
170
170
170
mW
100KRAD(Si)
50KRAD(Si)
20KRAD(Si)
10KRAD(Si)
200KRAD(Si)
(Preirradiation) (Note 9)
T
A
= 25
C
SUB-
SUB-
SYMBOL PARAMETER
CONDITIONS
NOTES
MIN
TYP
MAX
GROUP
MIN
TYP
MAX
GROUP
UNITS
e
n
Input Noise Voltage
0.1Hz to 10Hz
4, 5
0.25
V
P-P
Input Noise Voltage Density
f
O
= 10Hz
3
8.0
nV/
Hz
f
O
= 30Hz
4
5.6
nV/
Hz
f
O
= 1000Hz
4
4.5
nV/
Hz
i
n
Input Noise Current Density
f
O
= 1000Hz
4, 6
0.6
pV/
Hz
Input Resistance
2
G
Common Mode
Input Voltage Range
4
11
10.2
V
CMRR
Common Mode
V
CM
=
11V
100
1
dB
Rejection Ratio
V
CM
=
10V
94
2, 3
dB
PSRR
Power Supply
V
S
=
4V to
18V
94
1
dB
Rejection Ratio
V
S
=
4.5V to
18V
86
2, 3
dB
A
VOL
Large-Signal Voltage Gain
R
L
2k, V
O
=
10V
700
4
300
5, 6
V/mV
R
L
600
, V
O
=
1V
4
200
V/mV
V
S
=
4V
V
OUT
Maximum Output
R
L
= 2k
11.5
4
10.5
5, 6
V
Voltage Swing
R
L
= 600
10.0
4
V
SR
Slew Rate
R
L
= 2k
1.7
7
V/
s
GBW
Gain-Bandwidth Product
f
O
= 100kHz
4
5
MHz
Z
O
Open-Loop Output Resistance V
O
= 0, I
O
= 0
70
P
D
Power Dissipation
170
1
mW
55
C
T
A
125
C
TABLE 1A: ELECTRICAL CHARACTERISTICS
(Postirradiation) (Note 10)
3
RH27C
TABLE 1A: ELECTRICAL CHARACTERISTICS
Note 6: See test circuit for current noise measurement on OP-27/OP-37
data sheet.
Note 7: The average input offset drift performance is within the specifica-
tions unnulled or when nulled with a pot having a range 8k
to 20k
.
Note 8: The RH27C's inputs are protected by back-to-back diodes. Current
limiting resistors are not used in order to achieve low noise. If differential
input voltage exceeds
0.7V, the input current should be limited to 25mA.
Note 9: V
S
=
15V, V
CM
= 0V unless otherwise noted.
Note 10: T
A
= 25
C, V
S
=
15V, V
CM
= 0V, unless otherwise noted.
Note 1: Input offset voltage measurements are performed by automatic
test equipment approximately 0.5 seconds after application of power.
Note 2: Long-term input offset voltage stability refers to the averaged
trend line of offset voltage vs time over extended periods after the first 30
days of operation. Excluding the initial hour of operation, changes in V
OS
during the first 30 days are typically 2.5
V. Refer to the typical
performance curve.
Note 3: Sample tested to an LTPD of 15 on every lot. Contact factory for
100% testing of 10Hz voltage density noise.
Note 4: Parameter is guaranteed by design, characterization, or correlation
to other tested parameters.
Note 5: See test circuit and frequency response curve for 0.1Hz to 10Hz
tester on OP-27/OP-37 data sheet.
TOTAL DOSE BIAS CIRCUIT
10k
15V
15V
+
10k
1
F
1
F
8V
TYPICAL PERFOR A CE CHARACTERISTICS
W U
TOTAL DOSE KRAD (Si)
1
0
POSITIVE SLEW RATE (V/
s)
1
2
4
10
RH27C TPC01
100
1000
3
V
S
= 15V
R
L
= 2k
TOTAL DOSE KRAD (Si)
1
0
NEGATIVE SLEW RATE (V/
s)
1
2
4
10
RH27C TPC02
100
1000
3
V
S
= 15V
R
L
= 2k
Positive Slew Rate
Negative Slew Rate
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
4
RH27C
MIL-STD-883 TEST REQUIREMENTS
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*,2,3,4,5,6,7
Group A Test Requirements (Method 5005)
1,2,3,4,5,6,7
Group B and D for Class S, and
1
Group C and D for Class B
End Point Electrical Parameters (Method 5005)
* PDA applies to subgroup 1. See PDA Test Notes.
I.D. No. 66-10-0155 Rev. C 0398
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup
1, after burn-in divided by the total number of devices submitted for burn-
in in that lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
TABLE 2: ELECTRICAL TEST REQUIRE E TS
UW
TYPICAL PERFOR A CE CHARACTERISTICS
W U
Open-Loop Gain
Input Offset Voltage
Input Bias Current
Common Mode Rejection Ratio
Input Offset Current
TOTAL DOSE KRAD (Si)
1
INPUT OFFSET CURRENT (nA)
0
25
RH27C TPC07
25
50
10
100
1000
75
50
V
S
=
15V
V
CM
= 0V
Power Supply Rejection Ratio
LINEAR TECHNOLOGY CORPORATION 1993
rh27cc LT/HP 0398 100 REV C PRINTED IN USA
TOTAL DOSE KRAD (Si)
1
0
50
150
100
RH27C TPC03
50
100
10
1000
150
200
100
INPUT OFFSET VOLTAGE (
V)
V
S
=
15V
V
CM
= 0V
TOTAL DOSE KRAD (Si)
1
140
150
170
100
RH27C TPC04
130
120
10
1000
110
100
160
OPEN-LOOP GAIN (dB)
V
S
=
15V
R
L
= 2k
V
OUT
=
10V
TOTAL DOSE KRAD (Si)
1
110
120
140
100
RH27C TPC08
100
90
10
1000
80
70
130
POWER SUPPLY REJECTION RATIO (dB)
V
S
=
4V TO
18V
TOTAL DOSE KRAD (Si)
1
140
150
170
100
RH27C TPC06
130
120
10
1000
110
100
160
COMMON MODE REJECTION RATIO (dB)
V
S
=
15V
V
CM
=
11V
TOTAL DOSE KRAD (Si)
1
200
250
350
100
RH27C TPC05
150
100
10
1000
50
0
300
INPUT BIAS CURRENT (nA)
V
S
=
15V
V
CM
= 0V
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
q
(408) 432-1900
FAX: (408) 434-0507
q
TELEX: 499-3977
q
www.linear-tech.com
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