LESHAN RADIO COMPANY, LTD.
M141/6
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
45
Vdc
CollectorBase Voltage
V
CBO
50
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current -- Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board, (1)
P
D
225
mW
T
A
= 25C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
BCW72LT1 = K2
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
V
(BR)CEO
45
--
--
Vdc
(I
C
= 2.0mAdc, V
EB
= 0 )
CollectorEmitter Breakdown Voltage
V
(BR)CES
45
--
--
Vdc
(I
C
= 2.0 mAdc, V
EB
= 0 )
CollectorBase Breakdown Voltage
V
(BR)CBO
50
--
--
Vdc
(I
C
= 10
Adc, I
E
= 0 )
EmitterBase Breakdown Voltage
(I
E
= 10
Adc, I
C
= 0)
V
(BR)EBO
5.0
--
--
Vdc
Collector Cutoff Current
I
CBO
(V
CB
= 20 Vdc, I
E
= 0)
--
--
100
nAdc
(V
CB
= 20 Vdc, I
E
= 0, T
A
=100C )
--
--
10
Adc
1. FR 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BCW72LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 31808, STYLE 6
SOT23 (TO236AB)
LESHAN RADIO COMPANY, LTD.
M142/6
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
200
--
450
--
( I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc )
CollectorEmitter Saturation Voltage
V
CE(sat)
Vdc
( I
C
= 10 mAdc, I
B
= 0.5 mAdc )
--
--
0.25
( I
C
= 50 mAdc, I
B
= 2.5 mAdc )
--
0.21
--
BaseSaturation Voltage
V
BE(on)
--
0.85
--
Vdc
( I
C
= 50 mAdc, I
B
= 2.5 mAdc )
BaseEmitter On Voltage
V
BE(on)
0.6
--
0.75
Vdc
(I
C
= 2.0 mAdc, V CE = 5.0 Vdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
f
T
--
300
--
MHz
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance
C
obo
--
--
4.0
pF
( V
CB
= 10 Vdc,I
E
= 0, f = 1.0 MHz)
Input Capacitance
C
ibo
--
9.0
--
pF
(I
E
= 0, V
CB
= 10 Vdc, f = 1.0 MHz)
Noise Figure
NF
--
--
10
dB
( I
C
= 0.2 mAdc, V
CE
= 5.0 Vdc, R
S
= 2.0
k
, f = 1.0 kHz, BW = 200 Hz )
Figure 1. TurnOn Time
Figure 2. TurnOff Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
C
S
< 4.0 pF*
10 k
+3.0 V
275
C
S
< 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2%
0.5 V
10 < t
1
< 500
s
DUTY CYCLE = 2%
+10.9 V
<1.0 ns
<1.0 ns
+10.9 V
t
1
9.1 V
0
BCW72LT1
LESHAN RADIO COMPANY, LTD.
M143/6
Noise Figure is Defined as:
NF = 20 log
10
(
)
1/ 2
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K
= Boltzman's Constant (1.38 x 10
23
j/ K)
T
= Temperature of the Source Resistance ( K)
R
s
= Source Resistance (
)
e
n
2
+4KTR
S
+I
n
2
R
S
2
4KTR
S
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25C)
f, FREQUENCY (Hz)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
Figure 4. Noise Current
e
n
, NOISE VOL
T
AGE (nV)
I
C
=1.0 mA
100
A
300
A
30
A
10
A
I
n
, NOISE CURRENT (pA)
I
C
=1.0mA
300
A
100
A
30
A
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25C)
R
S
, SOURCE RESIST
ANCE (
)
R
S
, SOURCE RESIST
ANCE (
)
R
S
, SOURCE RESIST
ANCE (
)
20
10
7.0
5.0
3.0
2.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10 k
10
20
50
100
200
500
1.0k
2.0k
5.0k
10 k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
50
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
200
300
500 700 1.0K
10
20
30
50
70
100
200
300
500 700 1.0K
10
20
30
50
70
100
200
300
500 700 1.0K
2.0 dB
3.0 dB 4.0dB
6.0 dB
10 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
10 Hz to 15.7KHz
10
A
1.0 dB
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
50
BCW72LT1
I
C
, COLLECTOR CURRENT (
A)
Figure 5. Narrow Band, 100 Hz
I
C
, COLLECTOR CURRENT (
A)
Figure 7. Wideband
I
C
, COLLECTOR CURRENT (
A)
Figure 6. Narrow Band, 1.0 kHz
~
BANDWIDTH = 1.0 Hz
R
S
~ 0
~
~
BANDWIDTH = 1.0 Hz
R
S
8
LESHAN RADIO COMPANY, LTD.
M144/6
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 10. Collector Characteristics
I
C
, COLLECTOR CURRENT (mA)
Figure 11. "On" Voltages
I
C
, COLLECT
OR CURRENT (mA)
V
,
VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OR EMITTER VOL
T
AGE (VOL
TS)
V
, TEMPERA
TURE COEFFICIENTS (mV/C)
VB
for V
BE
VC
for V
CE(sat)
V
BE(on)
@ V
CE
= 1.0 V
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ I
C
/I
B
= 10
T
J
= 25C
I
C
= 1.0 mA
50 mA
100 mA
10 mA
T
J
= 25C
*APPLIES for I
C
/ I
B
< h
FE
/ 2
T
A
= 25C
PULSE WIDTH =300
s
DUTY CYCLE<2.0%
I
B
= 500
A
100
A
200
A
300
A
400
A
55C to 25C
55C to 25C
25C to 125C
25C to 125C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
1.6
0.8
0
0.8
1.6
2.4
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
1.0
0.8
0.6
0.4
0.2
0
0.002 0.0050.010.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0
10
20
100
80
60
40
20
0
0
5.0
10
15
20
25
30
35
40
TYPICAL STATIC CHARACTERISTICS
400
200
100
80
60
40
h
FE
, DC CURRENT GAIN
0.0040.006 0.01
0.02 0.03
0.05 0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
V
CE
= 1.0 V
V
CE
= 10 V
T
J
= 125C
25C
55C
BCW72LT1
LESHAN RADIO COMPANY, LTD.
M145/6
TYPICAL DYNAMIC CHARACTERISTICS
C, CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
Figure 13. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
Figure 14. TurnOff Time
I
C
, COLLECTOR CURRENT (mA)
Figure 15. CurrentGain -- Bandwidth Product
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 16. Capacitance
I
C
, COLLECTOR CURRENT (mA)
Figure 17. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 18. Output Admittance
t, TIME (ns)
t, TIME (ns)
f
T
, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
h
ie
, INPUT IMPEDANCE ( k
)
h
oe
, OUTPUT ADMITT
ANCE (
mhos
)
t
d
@V
BE(off)
= 0.5 Vdc
t
f
V
CC
= 3.0 V
I
C
/I
B
= 10
I
B1
=I
B2
T
J
= 25C
t
f
t
s
5.0 V
C
ib
C
ob
T
J
= 25C
f =1.0MHz
V
CE
= 10 Vdc
f = 1.0 kHz
T
A
= 25C
V
CE
= 10 Vdc
f = 1.0 kHz
T
A
= 25C
h
fe
200 @ I
C
= 1.0 mA
300
200
100
70
50
30
20
10
7.0
5.0
3.0
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
1000
700
500
300
200
100
70
50
30
20
10
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
500
300
200
100
70
50
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
10.0
7.0
5.0
3.0
2.0
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25C
V
CE
=20 V
T
J
= 25C
f=100MHz
h
fe
200 @ I
C
= 1.0 mA
BCW72LT1
~
~
~
~
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