High current rectifier Schottky diode with
very low V
F
drop (typ. 0.24 V at I
F
= 10mA)
For power supply applications
For clamping and protection in
low voltage applications
For detection and step-up-conversion
Maximum Ratings at T
A
= 25C, unless otherwise specified
Symbol
Unit
V
R
V
I
F
Surge forward current, (t <10ms)
I
FSM
Tj
Tstg
Driver Marking
Electrical Characteristics at T
A
= 25C, unless otherwise specified
min.
typ.
max.
DC Characteristics
IR
A
5
15
10
25
100
800
410
1500
VF
V
0.2
0.24
0.3
0.26
0.32
0.38
0.32
0.4
0.5
0.36
0.48
0.6
AC Characteristics
Diode capacitance
C
T
12
25
30
P
f
V
R
= 5 V, f = 1 MHz
LBAT60BT11/4
Junction temperature
Storage temperature
C
P
TOT
mW
1350
150
-55150
Value
10
Total power dissipation
T
S
< 28C
Silicon Schottky Diode
LBAT60BT1
Forward current
A
3
5
SOD323
Parameter
Diode reverse voltage
LBAT60BT1=5
Parameter
Symbol
Values
Unit
Reverse current
VR = 5 V
VR = 8 V
IF = 100 mA
IF = 500 mA
IF = 1000 mA
VR = 5 V, TA = 80 C
VR = 8 V, TA = 80 C
Forward voltage
IF = 10 mA
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