LESHAN RADIO COMPANY, LTD.
LBSS84LT1 1/4
LBSS84LT1
1
SOT 23
2
3
Power MOSFET
130 mAmps, 50 Volts
PChannel SOT23
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are dcdc converters, load
switching, power management in portable and batterypowered
products such as computers, printers, cellular and cordless telephones.
Energy Efficient
Miniature SOT23 Surface Mount Package Saves Board Space
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
50
V
dc
GatetoSource Voltage Continuous
V
GS
20
V
dc
Drain Current
Continuous @ T
A
= 25
C
Pulsed Drain Current (t
p
10
s)
I
D
I
DM
130
520
mA
Total Power Dissipation @ T
A
= 25
C
P
D
225
mW
Operating and Storage Temperature
Range
T
J
, T
stg
55 to
150
C
Thermal Resistance JunctiontoAmbient
R
JA
556
C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
T
L
260
C
Rating
MAXIMUM RATINGS
(T
J
= 25 C unless otherwise noted)
Device
Package
Shipping
ORDERING INFORMATION
LBSS84LT SOT23
3000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
3 Drain
1
2
-
Gate
Source
Marking Diagram
PD
W
W = Work Week
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250
Adc)
V(BR)DSS
50
Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125
C)
IDSS
0.1
15
60
Adc
GateBody Leakage Current (VGS =
20 Vdc, VDS = 0 Vdc)
IGSS
60
Adc
ON CHARACTERISTICS (Note 1.)
GateSource Threaded Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
2.0
Vdc
Static DraintoSource OnResistance
(VGS = 5.0 Vdc, ID = 100 mAdc)
rDS(on)
5.0
10
Ohms
Transfer Admittance
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)
|yfs|
50
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 Vdc)
Ciss
30
pF
Output Capacitance
(VDS = 5.0 Vdc)
Coss
10
Transfer Capacitance
(VDG = 5.0 Vdc)
Crss
5.0
SWITCHING CHARACTERISTICS (Note 2.)
TurnOn Delay Time
td(on)
2.5
ns
Rise Time
(VDD = 15 Vdc, ID = 2.5 Adc,
tr
1.0
TurnOff Delay Time
(VDD 15 Vdc, ID 2.5 Adc,
RL = 50
)
td(off)
16
Fall Time
tf
8.0
Gate Charge
QT
6000
pC
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
IS
0.130
A
Pulsed Current
ISM
0.520
Forward Voltage (Note 2.)
VSD
2.5
V
1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
2. Switching characteristics are independent of operating junction temperature.
LBSS84LT1
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.3
0.4
0.1
0.6
0.2
Figure 1. Transfer Characteristics
1
1.5
2
2.5
3
I D
, DRAIN CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. OnRegion Characteristics
VDS = 10 V
150
C
25
C
-55
C
0
2
4
10
0
0.15
0.2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I D
, DRAIN CURRENT
(AMPS)
6
0.05
8
0.3
0.1
3.5
0.5
0.25
1
3
9
5
7
3.25 V
2.75 V
2.25 V
2.5 V
3.0 V
VGS = 3.5 V
4
0.35
0.4
0.5
0.45
TJ = 25
C
LBSS84LT1 2/4
LESHAN RADIO COMPANY, LTD.
LBSS84LT1
R DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE
(NORMALIZED)
R DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (OHMS)
Figure 3. OnResistance versus Drain Current
0
0.2
0.4
0.6
2
5
6
Figure 4. OnResistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 5. OnResistance Variation with Temperature
1
TJ, JUNCTION TEMPERATURE (
C)
Figure 6. Gate Charge
25
C
VGS = 4.5 V
VGS = 10 V
ID = 0.52 A
-55
-5
45
95
145
4
0.6
0.8
3
R DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (OHMS)
0
0.2
0.4
0.6
2
5
6
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
4
3
V GS
, GA
TE-T
O-SOURCE VOL
T
AGE (VOL
TS)
0
6
2
0
QT, TOTAL GATE CHARGE (pC)
8
4
500
VDS = 40 V
TJ = 25
C
1000
ID = 0.5 A
1500
0.1
0.3
0.5
150
C
-55
C
7
4.5
5.5
3.5
2.5
6.5
0.1
0.3
0.5
1.2
2
1.4
1.6
1.8
VGS = 4.5 V
ID = 0.13 A
2000
150
C
25
C
-55
C
8
9
7
5
1
7
3
TYPICAL ELECTRICAL CHARACTERISTICS
0.001
0.1
1
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
I D
, DIODE CURRENT
(AMPS)
TJ = 150
C
0
0.5
1.0
1.5
0.01
-55
C
25
C
2.0
2.5
3.0
LBSS84LT1 3/4
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