The RF MOSFET Line
Power Field Effect Transistor
NChannel EnhancementMode MOSFET
Designed primarily for wideband largesignal output and driver from
30500 MHz.
Guaranteed 28 Volt, 500 MHz Performance
Output Power = 4.0 Watts
Gain = 16 dB (Min)
Efficiency = 55% (Typ)
Excellent Thermal Stability, Ideally Suited for Class A Operation
Facilitates Manual Gain Control, ALC and Modulation Techniques
100% Tested for Load Mismatch at All Phase Angles with
30:1 VSWR
Low Crss 0.8 pF Typical at VDS = 28 Volts
MAXIMUM RATINGS
(TJ = 25C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainGate Voltage
VDSS
65
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
65
Vdc
GateSource Voltage
VGS
20
Vdc
Drain CurrentContinuous
ID
1.0
ADC
Total Device Dissipation @ TC = 25C
Derate Above 25
C
PD
24
0.14
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
Operating Junction Temperature
TJ
200
C
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Case
RJC
7.2
C/W
NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF160
To 500 MHz, 4 W, 28 V
MOSFET BROADBAND
RF POWER FET
CASE 24906, STYLE 3
D
S
G
Order this document
by MRF160/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 5
ELECTRICAL CHARACTERISTICS
(TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VDS = 0 Vdc, VGS = 0 Vdc, ID = 1.0 mA)
V(BR)DSS
65
--
--
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 V)
IDSS
--
--
0.5
mA
GateSource Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
--
--
1.0
A
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 10 mA)
VGS(th)
1.5
3.0
4.5
Vdc
Drain Source OnVoltage
(VDS (on), VGS = 10 Vdc, ID = 500 mA)
VDS(on)
--
3.8
--
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 250 mA)
gfs
150
220
--
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 Vdc, VGS = 0 V, f = 1.0 MHz)
Ciss
--
6.0
--
pF
Output Capacitance
(VDS = 28 V, VGS = 0 Vdc, f = 1.0 MHz)
Coss
--
6.5
--
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Crss
--
0.8
--
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
Gps
16
18
--
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
50
55
--
%
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
Load VSWR = 30:1 at All Phase Angles at Frequency of Test
No Degradation in Output Power
Series Equivalent Input Impedance
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
Zin
--
6.8 j21
--
Ohms
Series Equivalent Output Impedance
(VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA)
Zout
--
21 j28
--
Ohms
2
REV 5
C1, C6
240 pF, 100 mil Chip Capacitors
C2
15 pF, 100 mil ATC Chip Capacitor
C4, C5
1 10 pF, Johanson Trimmer Capacitors
C3
24 pF, 100 mil ATC Chip Capacitor
C7, C9
0.1
mF, 100 mil Chip Capacitors
C8
220 pF, 100 mil ATC Chip Capacitor
C10, C11 680 pF, Feed Through Capacitors
C12
50
mF, 50 V Electrolytic Capacitor
C7
R3
RFC2
RFC1
RF Output
DUT
R1
C1
RF Input
C2
Figure 1. MRF160 500 MHz Test Circuit
R2
C3
C6
C5
C9
C10
C12
+
C8
VDD 28 V
+
VDC
R1
200
, 1/2 Watt
R2
10 k
, 1/2 Watt
R3
1 k
, 1/2 Watt
RFC1
Ferroxcube VK20019/4B
RFC2
8 Turns, #20 AWG, Enameled, ID 110 mils
Board Material -- 0.062
, Teflon Fiberglass, 1 oz.,
Copper clad both sides,
r = 2.55
C2
1300 mils
C3 & C4
300 mils
Input Line
160 mils X 5315 mils
Output Line
160 mils X 4345 mils
C5
900 mils
C4
C11
Bias
Supply
NOTE: Due to variation in Chip Capacitor values and
board material, these are approximate positions.
3
REV 5
Figure 2. MRF160 Broadband Test Fixture
4
REV 5
TYPICAL CHARACTERISTICS
P
out
, OUTPUT
POWER (W
A
TTS)
P
out
, OUTPUT
POWER (W
A
TTS)
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Pin, INPUT POWER (mW)
0
40
80
120
160
200
7
0
6
0
12
16
20
24
28
Figure 3. Output Power versus Input Power
Figure 4. Output Power versus Voltage
VDS, DRAIN VOLTAGE (VOLTS)
VDS, DRAINSOURCE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE
(pF)
I D
, DRAIN CURRENT
(AMPS)
0
4
8
12
16
20
28
32
0
10
0
0
1
10
100
24
4
2
5
4
3
2
1
28
20
12
4
8
16
24
0.1
1
f = 500 MHz
IDQ = 50 mA
50 mW
f = 500 MHz
IDQ = 50 mA
Pin = 150 mW
f = 1.0 MHz
VGS = 0 V
Coss
Ciss
Crss
VGS, GATESOURCE VOLTAGE (VOLTS)
0
0
0.5
1
1.5
2
2.5
3
3.5
0.4
0.8
1.2
1.6
2.0
2.4
2.8
4.0
Figure 5. Output Power versus Gate Voltage
Figure 6. Capacitance versus DrainSource Voltage
Figure 7. DC Safe Operating Area
P
out
, OUTPUT
POWER (W
A
TTS)
f = 500 MHz
VDS = 28 V
IDQ = 50 mA
Pin = Constant
6
3.2
3.6
25 mW
75 mW
5
REV 5
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